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IRF710PBF - 

400V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A TO-220AB PACKAGE

Vishay PCS IRF710PBF
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制造商產(chǎn)品編號(hào)：
IRF710PBF
倉(cāng)庫(kù)庫(kù)存編號(hào)：
70079082
技術(shù)數(shù)據(jù)表：
View IRF710PBF Datasheet Datasheet
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IRF710PBF產(chǎn)品概述

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Features:
  • Dynamic dV/dt Rating
  • Repetitive Avalanche Rated
  • Fast Switching
  • Ease of Paralleling
  • Simple Drive Requirements
  • Lead (Pb)-Free Available

    • IRF710PBF產(chǎn)品信息

      Brand/Series  IRF Series  
      Capacitance, Input  170 pF @ 25 V  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Single  
      Current, Drain  2 A  
      Dimensions  10.51 x 4.65 x 15.49 mm  
      Fall Time  11 ns  
      Gate Charge, Total  17 nC  
      Height  0.61" (15.49mm)  
      Length  0.413" (10.51mm)  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Operating and Storage Temperature  –55 to +150 °C  
      Package Type  TO-220AB  
      Polarization  N-Channel  
      Power Dissipation  36 W  
      Resistance, Drain to Source On  3.6 Ω  
      Resistance, Thermal, Junction to Case  3.5 °C/W  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Time, Turn-Off Delay  21 ns  
      Time, Turn-On Delay  8 ns  
      Transconductance, Forward  1 S  
      Typical Gate Charge @ Vgs  Maximum of 17 nC @ 10 V  
      Voltage, Breakdown, Drain to Source  400 V  
      Voltage, Drain to Source  400 V  
      Voltage, Forward, Diode  1.6 V  
      Voltage, Gate to Source  ±20 V  
      Width  0.183" (4.65mm)  
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    IRF710PBF相關(guān)搜索

    Brand/Series IRF Series  Vishay PCS Brand/Series IRF Series  MOSFET Transistors Brand/Series IRF Series  Vishay PCS MOSFET Transistors Brand/Series IRF Series   Capacitance, Input 170 pF @ 25 V  Vishay PCS Capacitance, Input 170 pF @ 25 V  MOSFET Transistors Capacitance, Input 170 pF @ 25 V  Vishay PCS MOSFET Transistors Capacitance, Input 170 pF @ 25 V   Channel Mode Enhancement  Vishay PCS Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Vishay PCS MOSFET Transistors Channel Mode Enhancement   Channel Type N  Vishay PCS Channel Type N  MOSFET Transistors Channel Type N  Vishay PCS MOSFET Transistors Channel Type N   Configuration Single  Vishay PCS Configuration Single  MOSFET Transistors Configuration Single  Vishay PCS MOSFET Transistors Configuration Single   Current, Drain 2 A  Vishay PCS Current, Drain 2 A  MOSFET Transistors Current, Drain 2 A  Vishay PCS MOSFET Transistors Current, Drain 2 A   Dimensions 10.51 x 4.65 x 15.49 mm  Vishay PCS Dimensions 10.51 x 4.65 x 15.49 mm  MOSFET Transistors Dimensions 10.51 x 4.65 x 15.49 mm  Vishay PCS MOSFET Transistors Dimensions 10.51 x 4.65 x 15.49 mm   Fall Time 11 ns  Vishay PCS Fall Time 11 ns  MOSFET Transistors Fall Time 11 ns  Vishay PCS MOSFET Transistors Fall Time 11 ns   Gate Charge, Total 17 nC  Vishay PCS Gate Charge, Total 17 nC  MOSFET Transistors Gate Charge, Total 17 nC  Vishay PCS MOSFET Transistors Gate Charge, Total 17 nC   Height 0.61" (15.49mm)  Vishay PCS Height 0.61" (15.49mm)  MOSFET Transistors Height 0.61" (15.49mm)  Vishay PCS MOSFET Transistors Height 0.61" (15.49mm)   Length 0.413" (10.51mm)  Vishay PCS Length 0.413" (10.51mm)  MOSFET Transistors Length 0.413" (10.51mm)  Vishay PCS MOSFET Transistors Length 0.413" (10.51mm)   Mounting Type Through Hole  Vishay PCS Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  Vishay PCS MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  Vishay PCS Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Vishay PCS MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  Vishay PCS Number of Pins 3  MOSFET Transistors Number of Pins 3  Vishay PCS MOSFET Transistors Number of Pins 3   Operating and Storage Temperature –55 to +150 °C  Vishay PCS Operating and Storage Temperature –55 to +150 °C  MOSFET Transistors Operating and Storage Temperature –55 to +150 °C  Vishay PCS MOSFET Transistors Operating and Storage Temperature –55 to +150 °C   Package Type TO-220AB  Vishay PCS Package Type TO-220AB  MOSFET Transistors Package Type TO-220AB  Vishay PCS MOSFET Transistors Package Type TO-220AB   Polarization N-Channel  Vishay PCS Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Vishay PCS MOSFET Transistors Polarization N-Channel   Power Dissipation 36 W  Vishay PCS Power Dissipation 36 W  MOSFET Transistors Power Dissipation 36 W  Vishay PCS MOSFET Transistors Power Dissipation 36 W   Resistance, Drain to Source On 3.6 Ω  Vishay PCS Resistance, Drain to Source On 3.6 Ω  MOSFET Transistors Resistance, Drain to Source On 3.6 Ω  Vishay PCS MOSFET Transistors Resistance, Drain to Source On 3.6 Ω   Resistance, Thermal, Junction to Case 3.5 °C/W  Vishay PCS Resistance, Thermal, Junction to Case 3.5 °C/W  MOSFET Transistors Resistance, Thermal, Junction to Case 3.5 °C/W  Vishay PCS MOSFET Transistors Resistance, Thermal, Junction to Case 3.5 °C/W   Temperature, Operating, Maximum +150 °C  Vishay PCS Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Vishay PCS MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Vishay PCS Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Vishay PCS MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Vishay PCS Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Vishay PCS MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 21 ns  Vishay PCS Time, Turn-Off Delay 21 ns  MOSFET Transistors Time, Turn-Off Delay 21 ns  Vishay PCS MOSFET Transistors Time, Turn-Off Delay 21 ns   Time, Turn-On Delay 8 ns  Vishay PCS Time, Turn-On Delay 8 ns  MOSFET Transistors Time, Turn-On Delay 8 ns  Vishay PCS MOSFET Transistors Time, Turn-On Delay 8 ns   Transconductance, Forward 1 S  Vishay PCS Transconductance, Forward 1 S  MOSFET Transistors Transconductance, Forward 1 S  Vishay PCS MOSFET Transistors Transconductance, Forward 1 S   Typical Gate Charge @ Vgs Maximum of 17 nC @ 10 V  Vishay PCS Typical Gate Charge @ Vgs Maximum of 17 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 17 nC @ 10 V  Vishay PCS MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 17 nC @ 10 V   Voltage, Breakdown, Drain to Source 400 V  Vishay PCS Voltage, Breakdown, Drain to Source 400 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 400 V  Vishay PCS MOSFET Transistors Voltage, Breakdown, Drain to Source 400 V   Voltage, Drain to Source 400 V  Vishay PCS Voltage, Drain to Source 400 V  MOSFET Transistors Voltage, Drain to Source 400 V  Vishay PCS MOSFET Transistors Voltage, Drain to Source 400 V   Voltage, Forward, Diode 1.6 V  Vishay PCS Voltage, Forward, Diode 1.6 V  MOSFET Transistors Voltage, Forward, Diode 1.6 V  Vishay PCS MOSFET Transistors Voltage, Forward, Diode 1.6 V   Voltage, Gate to Source ±20 V  Vishay PCS Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  Vishay PCS MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.183" (4.65mm)  Vishay PCS Width 0.183" (4.65mm)  MOSFET Transistors Width 0.183" (4.65mm)  Vishay PCS MOSFET Transistors Width 0.183" (4.65mm)  
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