Capacitance, Input |
10700 pF @ 25 V |
|
Channel Mode |
Enhancement |
|
Channel Type |
N |
|
Configuration |
Single |
|
Current, Drain |
180 A |
|
Dimensions |
38.3 x 25.7 x 12.3 mm |
|
Gate Charge, Total |
250 nC |
|
Height |
0.484" (12.3mm) |
|
Length |
1.507" (38.3mm) |
|
Mounting Type |
Surface Mount |
|
Number of Elements per Chip |
1 |
|
Number of Pins |
4 |
|
Package Type |
SOT-227 |
|
Polarization |
N-Channel |
|
Power Dissipation |
480 W |
|
Resistance, Drain to Source On |
0.0065 Ω |
|
Temperature, Operating, Maximum |
+150 °C |
|
Temperature, Operating, Minimum |
-55 °C |
|
Temperature, Operating, Range |
-55 to +150 °C |
|
Time, Turn-Off Delay |
181 ns |
|
Time, Turn-On Delay |
45 ns |
|
Transconductance, Forward |
93 S |
|
Typical Gate Charge @ Vgs |
250 nC @ 10 V |
|
Voltage, Breakdown, Drain to Source |
100 V |
|
Voltage, Drain to Source |
100 V |
|
Voltage, Forward, Diode |
1.3 V |
|
Voltage, Gate to Source |
±20 V |
|
Width |
1.012" (25.7mm) |
|
關鍵詞 |