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SKM800GA176D - 

IGBT; D-59; IGBT; 1700 V, 830 A @ 25 DegC; 600 A; 2 V (Typ.); 20 V

SEMIKRON SKM800GA176D
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制造商產(chǎn)品編號(hào):
SKM800GA176D
倉庫庫存編號(hào):
70098171
技術(shù)數(shù)據(jù)表:
View SKM800GA176D Datasheet Datasheet
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SKM800GA176D產(chǎn)品概述

IGBT Module Transistors

SKM800GA176D產(chǎn)品信息

  Brand/Series  IGBT Series  
  Capacitance, Gate  39.6 nF  
  Channel Type  N  
  Configuration  Single  
  Current, Collector  830 A  
  Current, Continuous Collector  830 A  
  Dimensions  106.4 x 61.4 x 36.5 mm  
  Energy Rating  580 mJ  
  Fall Time  160 nS (Typ.)  
  Height  1.437" (36.5mm)  
  Length  4.188" (106.4mm)  
  Mounting Type  Screw  
  Number of Pins  4  
  Operating and Storage Temperature  -40 to 150°C (Operating) and 125°C (Storage)  
  Package Type  D 59  
  Polarity  N-Channel  
  Primary Type  Si  
  Resistance, Thermal, Junction to Case  0.04 K/W  
  Switching Loss  335 mJ (Typ.)  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -40 °C  
  Temperature, Operating, Range  -40 to +150 °C  
  Time, Rise  90 nS (Typ.)  
  Transistor Type  IGBT  
  Type  Trench  
  Voltage and Current Rating  1700 V, 830 A @ 25°C  
  Voltage, Collector to Emitter  1700 V  
  Voltage, Collector to Emitter Shorted  1700 V  
  Voltage, Gate Threshold, Range  5.8 V (Typ.)  
  Voltage, Gate to Emitter  ±20 V  
  Voltage, Saturation, Collector to Emitter  2 V (Typ.)  
  Width  2.417" (61.4mm)  
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Brand/Series IGBT Series  SEMIKRON Brand/Series IGBT Series  IGBT Transistor Modules Brand/Series IGBT Series  SEMIKRON IGBT Transistor Modules Brand/Series IGBT Series   Capacitance, Gate 39.6 nF  SEMIKRON Capacitance, Gate 39.6 nF  IGBT Transistor Modules Capacitance, Gate 39.6 nF  SEMIKRON IGBT Transistor Modules Capacitance, Gate 39.6 nF   Channel Type N  SEMIKRON Channel Type N  IGBT Transistor Modules Channel Type N  SEMIKRON IGBT Transistor Modules Channel Type N   Configuration Single  SEMIKRON Configuration Single  IGBT Transistor Modules Configuration Single  SEMIKRON IGBT Transistor Modules Configuration Single   Current, Collector 830 A  SEMIKRON Current, Collector 830 A  IGBT Transistor Modules Current, Collector 830 A  SEMIKRON IGBT Transistor Modules Current, Collector 830 A   Current, Continuous Collector 830 A  SEMIKRON Current, Continuous Collector 830 A  IGBT Transistor Modules Current, Continuous Collector 830 A  SEMIKRON IGBT Transistor Modules Current, Continuous Collector 830 A   Dimensions 106.4 x 61.4 x 36.5 mm  SEMIKRON Dimensions 106.4 x 61.4 x 36.5 mm  IGBT Transistor Modules Dimensions 106.4 x 61.4 x 36.5 mm  SEMIKRON IGBT Transistor Modules Dimensions 106.4 x 61.4 x 36.5 mm   Energy Rating 580 mJ  SEMIKRON Energy Rating 580 mJ  IGBT Transistor Modules Energy Rating 580 mJ  SEMIKRON IGBT Transistor Modules Energy Rating 580 mJ   Fall Time 160 nS (Typ.)  SEMIKRON Fall Time 160 nS (Typ.)  IGBT Transistor Modules Fall Time 160 nS (Typ.)  SEMIKRON IGBT Transistor Modules Fall Time 160 nS (Typ.)   Height 1.437" (36.5mm)  SEMIKRON Height 1.437" (36.5mm)  IGBT Transistor Modules Height 1.437" (36.5mm)  SEMIKRON IGBT Transistor Modules Height 1.437" (36.5mm)   Length 4.188" (106.4mm)  SEMIKRON Length 4.188" (106.4mm)  IGBT Transistor Modules Length 4.188" (106.4mm)  SEMIKRON IGBT Transistor Modules Length 4.188" (106.4mm)   Mounting Type Screw  SEMIKRON Mounting Type Screw  IGBT Transistor Modules Mounting Type Screw  SEMIKRON IGBT Transistor Modules Mounting Type Screw   Number of Pins 4  SEMIKRON Number of Pins 4  IGBT Transistor Modules Number of Pins 4  SEMIKRON IGBT Transistor Modules Number of Pins 4   Operating and Storage Temperature -40 to 150°C (Operating) and 125°C (Storage)  SEMIKRON Operating and Storage Temperature -40 to 150°C (Operating) and 125°C (Storage)  IGBT Transistor Modules Operating and Storage Temperature -40 to 150°C (Operating) and 125°C (Storage)  SEMIKRON IGBT Transistor Modules Operating and Storage Temperature -40 to 150°C (Operating) and 125°C (Storage)   Package Type D 59  SEMIKRON Package Type D 59  IGBT Transistor Modules Package Type D 59  SEMIKRON IGBT Transistor Modules Package Type D 59   Polarity N-Channel  SEMIKRON Polarity N-Channel  IGBT Transistor Modules Polarity N-Channel  SEMIKRON IGBT Transistor Modules Polarity N-Channel   Primary Type Si  SEMIKRON Primary Type Si  IGBT Transistor Modules Primary Type Si  SEMIKRON IGBT Transistor Modules Primary Type Si   Resistance, Thermal, Junction to Case 0.04 K/W  SEMIKRON Resistance, Thermal, Junction to Case 0.04 K/W  IGBT Transistor Modules Resistance, Thermal, Junction to Case 0.04 K/W  SEMIKRON IGBT Transistor Modules Resistance, Thermal, Junction to Case 0.04 K/W   Switching Loss 335 mJ (Typ.)  SEMIKRON Switching Loss 335 mJ (Typ.)  IGBT Transistor Modules Switching Loss 335 mJ (Typ.)  SEMIKRON IGBT Transistor Modules Switching Loss 335 mJ (Typ.)   Temperature, Operating, Maximum +150 °C  SEMIKRON Temperature, Operating, Maximum +150 °C  IGBT Transistor Modules Temperature, Operating, Maximum +150 °C  SEMIKRON IGBT Transistor Modules Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -40 °C  SEMIKRON Temperature, Operating, Minimum -40 °C  IGBT Transistor Modules Temperature, Operating, Minimum -40 °C  SEMIKRON IGBT Transistor Modules Temperature, Operating, Minimum -40 °C   Temperature, Operating, Range -40 to +150 °C  SEMIKRON Temperature, Operating, Range -40 to +150 °C  IGBT Transistor Modules Temperature, Operating, Range -40 to +150 °C  SEMIKRON IGBT Transistor Modules Temperature, Operating, Range -40 to +150 °C   Time, Rise 90 nS (Typ.)  SEMIKRON Time, Rise 90 nS (Typ.)  IGBT Transistor Modules Time, Rise 90 nS (Typ.)  SEMIKRON IGBT Transistor Modules Time, Rise 90 nS (Typ.)   Transistor Type IGBT  SEMIKRON Transistor Type IGBT  IGBT Transistor Modules Transistor Type IGBT  SEMIKRON IGBT Transistor Modules Transistor Type IGBT   Type Trench  SEMIKRON Type Trench  IGBT Transistor Modules Type Trench  SEMIKRON IGBT Transistor Modules Type Trench   Voltage and Current Rating 1700 V, 830 A @ 25°C  SEMIKRON Voltage and Current Rating 1700 V, 830 A @ 25°C  IGBT Transistor Modules Voltage and Current Rating 1700 V, 830 A @ 25°C  SEMIKRON IGBT Transistor Modules Voltage and Current Rating 1700 V, 830 A @ 25°C   Voltage, Collector to Emitter 1700 V  SEMIKRON Voltage, Collector to Emitter 1700 V  IGBT Transistor Modules Voltage, Collector to Emitter 1700 V  SEMIKRON IGBT Transistor Modules Voltage, Collector to Emitter 1700 V   Voltage, Collector to Emitter Shorted 1700 V  SEMIKRON Voltage, Collector to Emitter Shorted 1700 V  IGBT Transistor Modules Voltage, Collector to Emitter Shorted 1700 V  SEMIKRON IGBT Transistor Modules Voltage, Collector to Emitter Shorted 1700 V   Voltage, Gate Threshold, Range 5.8 V (Typ.)  SEMIKRON Voltage, Gate Threshold, Range 5.8 V (Typ.)  IGBT Transistor Modules Voltage, Gate Threshold, Range 5.8 V (Typ.)  SEMIKRON IGBT Transistor Modules Voltage, Gate Threshold, Range 5.8 V (Typ.)   Voltage, Gate to Emitter ±20 V  SEMIKRON Voltage, Gate to Emitter ±20 V  IGBT Transistor Modules Voltage, Gate to Emitter ±20 V  SEMIKRON IGBT Transistor Modules Voltage, Gate to Emitter ±20 V   Voltage, Saturation, Collector to Emitter 2 V (Typ.)  SEMIKRON Voltage, Saturation, Collector to Emitter 2 V (Typ.)  IGBT Transistor Modules Voltage, Saturation, Collector to Emitter 2 V (Typ.)  SEMIKRON IGBT Transistor Modules Voltage, Saturation, Collector to Emitter 2 V (Typ.)   Width 2.417" (61.4mm)  SEMIKRON Width 2.417" (61.4mm)  IGBT Transistor Modules Width 2.417" (61.4mm)  SEMIKRON IGBT Transistor Modules Width 2.417" (61.4mm)  
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