Brand/Series |
IGBT Series |
|
Capacitance, Gate |
26 nF |
|
Channel Type |
N |
|
Configuration |
Dual |
|
Current, Collector |
565 A |
|
Current, Continuous Collector |
616 A |
|
Dimensions |
106.4 x 61.4 x 30.5 mm |
|
Energy Rating |
63 mJ |
|
Fall Time |
60 ns |
|
Height |
1.201" (30.5mm) |
|
Length |
4.188" (106.4mm) |
|
Mounting Type |
Screw |
|
Number of Pins |
7 |
|
Operating and Storage Temperature |
-40 to 150°C (Operating), -40 to 125°C (Storage) |
|
Package Type |
Semitrans3 |
|
Polarity |
N-Channel |
|
Primary Type |
Si |
|
Resistance, Thermal, Junction to Case |
0.055 K/W |
|
Speed, Switching |
12 kHz |
|
Switching Loss |
32 mJ |
|
Temperature, Operating, Maximum |
+175 °C |
|
Temperature, Operating, Minimum |
-40 °C |
|
Temperature, Operating, Range |
-40 to +175 °C |
|
Time, Rise |
60 ns |
|
Transistor Type |
IGBT |
|
Type |
SPT |
|
Voltage, Breakdown, Collector to Emitter |
1200 V |
|
Voltage, Collector to Emitter |
1200 V |
|
Voltage, Collector to Emitter Shorted |
1200 V |
|
Voltage, Gate Threshold, Range |
5.5 V |
|
Voltage, Gate to Emitter |
20 V |
|
Voltage, Saturation, Collector to Emitter |
1200 V |
|
Width |
2.417" (61.4mm) |
|
關鍵詞 |