VBT3045BP-E3/4W產(chǎn)品概述
Features:
Trench MOS Schottky Technology
Low Forward Voltage Drop, Low Power Losses
High Efficiency Operation
Meets MSL level 1, Per J-STD-020, LF Maximum Peak of 245°°C
TJ 200°C Max. in Solar bypass Application
Applications:
For Use in Solar Cell Junction Box as a Bypass Diode for Protection, Using DC Forward Current without Reverse Bias