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SUP90P06-09L-E3/BKN - 

P-CHANNEL 60-V (D-S) 175C MOSFET

Siliconix / Vishay SUP90P06-09L-E3/BKN
聲明:圖片僅供參考,請(qǐng)以實(shí)物為準(zhǔn)!
制造商產(chǎn)品編號(hào):
SUP90P06-09L-E3/BKN
倉(cāng)庫(kù)庫(kù)存編號(hào):
70026399
技術(shù)數(shù)據(jù)表:
View SUP90P06-09L-E3/BKN Datasheet Datasheet
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SUP90P06-09L-E3/BKN產(chǎn)品概述



Features:
  • TrenchFET® Power MOSFET

    Applications:
  • DC/DC Primary Switch
  • Automotive — 12 V Boardnet — High-Side Switches — Motor Drives
  • SUP90P06-09L-E3/BKN產(chǎn)品信息

      Brand/Series  SUP Series  
      Channel Type  P  
      Current, Drain  -90 A  
      Fall Time  450 ns  
      Operating and Storage Temperature  -55 to +175 °C  
      Package Type  TO-220AB  
      Polarization  P-Channel  
      Power Dissipation  250 W  
      Resistance, Drain to Source On  0.0118 Ohm  
      Resistance, Thermal, Junction to Case  0.6 °C/W  
      Temperature, Operating, Maximum  +175 °C  
      Temperature, Operating, Minimum  -55 °C  
      Thermal Resistance, Junction to Ambient  62 °C/W  
      Time, Rise  285 ns  
      Time, Turn-Off Delay  210 ns  
      Time, Turn-On Delay  30 ns  
      Transconductance, Forward  20 S  
      Voltage, Breakdown, Drain to Source  -60 V  
      Voltage, Drain to Source  -60 V  
      Voltage, Forward, Diode  -1.5 V  
      Voltage, Gate to Source  ±20 V  
    關(guān)鍵詞         

    SUP90P06-09L-E3/BKN相關(guān)搜索

    Brand/Series SUP Series  Siliconix / Vishay Brand/Series SUP Series  MOSFET Transistors Brand/Series SUP Series  Siliconix / Vishay MOSFET Transistors Brand/Series SUP Series   Channel Type P  Siliconix / Vishay Channel Type P  MOSFET Transistors Channel Type P  Siliconix / Vishay MOSFET Transistors Channel Type P   Current, Drain -90 A  Siliconix / Vishay Current, Drain -90 A  MOSFET Transistors Current, Drain -90 A  Siliconix / Vishay MOSFET Transistors Current, Drain -90 A   Fall Time 450 ns  Siliconix / Vishay Fall Time 450 ns  MOSFET Transistors Fall Time 450 ns  Siliconix / Vishay MOSFET Transistors Fall Time 450 ns   Operating and Storage Temperature -55 to +175 °C  Siliconix / Vishay Operating and Storage Temperature -55 to +175 °C  MOSFET Transistors Operating and Storage Temperature -55 to +175 °C  Siliconix / Vishay MOSFET Transistors Operating and Storage Temperature -55 to +175 °C   Package Type TO-220AB  Siliconix / Vishay Package Type TO-220AB  MOSFET Transistors Package Type TO-220AB  Siliconix / Vishay MOSFET Transistors Package Type TO-220AB   Polarization P-Channel  Siliconix / Vishay Polarization P-Channel  MOSFET Transistors Polarization P-Channel  Siliconix / Vishay MOSFET Transistors Polarization P-Channel   Power Dissipation 250 W  Siliconix / Vishay Power Dissipation 250 W  MOSFET Transistors Power Dissipation 250 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 250 W   Resistance, Drain to Source On 0.0118 Ohm  Siliconix / Vishay Resistance, Drain to Source On 0.0118 Ohm  MOSFET Transistors Resistance, Drain to Source On 0.0118 Ohm  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.0118 Ohm   Resistance, Thermal, Junction to Case 0.6 °C/W  Siliconix / Vishay Resistance, Thermal, Junction to Case 0.6 °C/W  MOSFET Transistors Resistance, Thermal, Junction to Case 0.6 °C/W  Siliconix / Vishay MOSFET Transistors Resistance, Thermal, Junction to Case 0.6 °C/W   Temperature, Operating, Maximum +175 °C  Siliconix / Vishay Temperature, Operating, Maximum +175 °C  MOSFET Transistors Temperature, Operating, Maximum +175 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +175 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Thermal Resistance, Junction to Ambient 62 °C/W  Siliconix / Vishay Thermal Resistance, Junction to Ambient 62 °C/W  MOSFET Transistors Thermal Resistance, Junction to Ambient 62 °C/W  Siliconix / Vishay MOSFET Transistors Thermal Resistance, Junction to Ambient 62 °C/W   Time, Rise 285 ns  Siliconix / Vishay Time, Rise 285 ns  MOSFET Transistors Time, Rise 285 ns  Siliconix / Vishay MOSFET Transistors Time, Rise 285 ns   Time, Turn-Off Delay 210 ns  Siliconix / Vishay Time, Turn-Off Delay 210 ns  MOSFET Transistors Time, Turn-Off Delay 210 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 210 ns   Time, Turn-On Delay 30 ns  Siliconix / Vishay Time, Turn-On Delay 30 ns  MOSFET Transistors Time, Turn-On Delay 30 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 30 ns   Transconductance, Forward 20 S  Siliconix / Vishay Transconductance, Forward 20 S  MOSFET Transistors Transconductance, Forward 20 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 20 S   Voltage, Breakdown, Drain to Source -60 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source -60 V  MOSFET Transistors Voltage, Breakdown, Drain to Source -60 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source -60 V   Voltage, Drain to Source -60 V  Siliconix / Vishay Voltage, Drain to Source -60 V  MOSFET Transistors Voltage, Drain to Source -60 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source -60 V   Voltage, Forward, Diode -1.5 V  Siliconix / Vishay Voltage, Forward, Diode -1.5 V  MOSFET Transistors Voltage, Forward, Diode -1.5 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode -1.5 V   Voltage, Gate to Source ±20 V  Siliconix / Vishay Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±20 V  
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