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SUP75N03-04-E3 - 

SUP75N03-04-E3 N-channel MOSFET Transistor, 75 A, 30 V, 3-Pin TO-220AB

Siliconix / Vishay SUP75N03-04-E3
聲明:圖片僅供參考,請以實物為準!
制造商產(chǎn)品編號:
SUP75N03-04-E3
倉庫庫存編號:
70026398
技術數(shù)據(jù)表:
View SUP75N03-04-E3 Datasheet Datasheet
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由于產(chǎn)品數(shù)據(jù)庫龐大,部分產(chǎn)品信息可能未能及時更新,下單前請與銷售人員確認好實時在庫數(shù)量,謝謝合作!

SUP75N03-04-E3產(chǎn)品概述

Features:
  • Halogen-Free Option Available
  • Low-Side Switching
  • Low On-Resistance: 5 Ω
  • Low Threshold: 0.9 V (Typ.)
  • Fast Switching Speed: 35 ns (Typ.)
  • TrenchFET® Power MOSFETs: 1.5 V Rated
  • ESD Protected: 2000 V

    Applications:
  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
  • Battery Operated Systems
  • Power Supply Converter Circuits
  • Load/Power Switching Cell Phones, Pagers
  • SUP75N03-04-E3產(chǎn)品信息

      Brand/Series  SUP Series  
      Channel Type  N  
      Current, Drain  75 A  
      Fall Time  95 ns  
      Gate Charge, Total  250 nC  
      Operating and Storage Temperature  –55 to +175 °C  
      Package Type  TO-220AB  
      Polarization  N-Channel  
      Power Dissipation  187 W  
      Resistance, Drain to Source On  0.006 Ohm  
      Resistance, Thermal, Junction to Case  0.6 °C/W  
      Temperature, Operating, Maximum  +175 °C  
      Temperature, Operating, Minimum  –55 °C  
      Thermal Resistance, Junction to Ambient  40 °C/W  
      Time, Rise  40 ns  
      Time, Turn-Off Delay  190 ns  
      Time, Turn-On Delay  40 ns  
      Transconductance, Forward  30 S  
      Voltage, Breakdown, Drain to Source  30 V  
      Voltage, Forward, Diode  1.3 V  
      Voltage, Gate to Source  ±20 V  
    關鍵詞         

    SUP75N03-04-E3相關搜索

    Brand/Series SUP Series  Siliconix / Vishay Brand/Series SUP Series  MOSFET Transistors Brand/Series SUP Series  Siliconix / Vishay MOSFET Transistors Brand/Series SUP Series   Channel Type N  Siliconix / Vishay Channel Type N  MOSFET Transistors Channel Type N  Siliconix / Vishay MOSFET Transistors Channel Type N   Current, Drain 75 A  Siliconix / Vishay Current, Drain 75 A  MOSFET Transistors Current, Drain 75 A  Siliconix / Vishay MOSFET Transistors Current, Drain 75 A   Fall Time 95 ns  Siliconix / Vishay Fall Time 95 ns  MOSFET Transistors Fall Time 95 ns  Siliconix / Vishay MOSFET Transistors Fall Time 95 ns   Gate Charge, Total 250 nC  Siliconix / Vishay Gate Charge, Total 250 nC  MOSFET Transistors Gate Charge, Total 250 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 250 nC   Operating and Storage Temperature –55 to +175 °C  Siliconix / Vishay Operating and Storage Temperature –55 to +175 °C  MOSFET Transistors Operating and Storage Temperature –55 to +175 °C  Siliconix / Vishay MOSFET Transistors Operating and Storage Temperature –55 to +175 °C   Package Type TO-220AB  Siliconix / Vishay Package Type TO-220AB  MOSFET Transistors Package Type TO-220AB  Siliconix / Vishay MOSFET Transistors Package Type TO-220AB   Polarization N-Channel  Siliconix / Vishay Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Siliconix / Vishay MOSFET Transistors Polarization N-Channel   Power Dissipation 187 W  Siliconix / Vishay Power Dissipation 187 W  MOSFET Transistors Power Dissipation 187 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 187 W   Resistance, Drain to Source On 0.006 Ohm  Siliconix / Vishay Resistance, Drain to Source On 0.006 Ohm  MOSFET Transistors Resistance, Drain to Source On 0.006 Ohm  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.006 Ohm   Resistance, Thermal, Junction to Case 0.6 °C/W  Siliconix / Vishay Resistance, Thermal, Junction to Case 0.6 °C/W  MOSFET Transistors Resistance, Thermal, Junction to Case 0.6 °C/W  Siliconix / Vishay MOSFET Transistors Resistance, Thermal, Junction to Case 0.6 °C/W   Temperature, Operating, Maximum +175 °C  Siliconix / Vishay Temperature, Operating, Maximum +175 °C  MOSFET Transistors Temperature, Operating, Maximum +175 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +175 °C   Temperature, Operating, Minimum –55 °C  Siliconix / Vishay Temperature, Operating, Minimum –55 °C  MOSFET Transistors Temperature, Operating, Minimum –55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum –55 °C   Thermal Resistance, Junction to Ambient 40 °C/W  Siliconix / Vishay Thermal Resistance, Junction to Ambient 40 °C/W  MOSFET Transistors Thermal Resistance, Junction to Ambient 40 °C/W  Siliconix / Vishay MOSFET Transistors Thermal Resistance, Junction to Ambient 40 °C/W   Time, Rise 40 ns  Siliconix / Vishay Time, Rise 40 ns  MOSFET Transistors Time, Rise 40 ns  Siliconix / Vishay MOSFET Transistors Time, Rise 40 ns   Time, Turn-Off Delay 190 ns  Siliconix / Vishay Time, Turn-Off Delay 190 ns  MOSFET Transistors Time, Turn-Off Delay 190 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 190 ns   Time, Turn-On Delay 40 ns  Siliconix / Vishay Time, Turn-On Delay 40 ns  MOSFET Transistors Time, Turn-On Delay 40 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 40 ns   Transconductance, Forward 30 S  Siliconix / Vishay Transconductance, Forward 30 S  MOSFET Transistors Transconductance, Forward 30 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 30 S   Voltage, Breakdown, Drain to Source 30 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source 30 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 30 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source 30 V   Voltage, Forward, Diode 1.3 V  Siliconix / Vishay Voltage, Forward, Diode 1.3 V  MOSFET Transistors Voltage, Forward, Diode 1.3 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 1.3 V   Voltage, Gate to Source ±20 V  Siliconix / Vishay Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±20 V  
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