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SUD15N15-95-E3/BKN - 

N-CHANNEL 150-V (D-S) 175C DEG MOSF

Siliconix / Vishay SUD15N15-95-E3/BKN
聲明:圖片僅供參考,請以實物為準!
制造商產(chǎn)品編號:
SUD15N15-95-E3/BKN
倉庫庫存編號:
70026388
技術數(shù)據(jù)表:
View SUD15N15-95-E3/BKN Datasheet Datasheet
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SUD15N15-95-E3/BKN產(chǎn)品概述



Features:
  • TrenchFET® Power MOSFETS
  • 175°C Junction Temperature
  • 100% Rg Tested

    Applications:
  • Primary Side Switch
  • SUD15N15-95-E3/BKN產(chǎn)品信息

      Brand/Series  SUD Series  
      Channel Type  N  
      Current, Drain  15 A  
      Fall Time  45 ns  
      Gate Charge, Total  25 nC  
      Operating and Storage Temperature  –55 to +175 °C  
      Package Type  TO-252  
      Polarization  N-Channel  
      Power Dissipation  62 W  
      Resistance, Drain to Source On  0.095 Ohm  
      Resistance, Thermal, Junction to Case  2.4 °C/W  
      Temperature, Operating, Maximum  +175 °C  
      Temperature, Operating, Minimum  –55 °C  
      Thermal Resistance, Junction to Ambient  20 °C/W  
      Time, Rise  55 ns  
      Time, Turn-Off Delay  25 ns  
      Time, Turn-On Delay  12 ns  
      Transconductance, Forward  25 S  
      Voltage, Breakdown, Drain to Source  150 V  
      Voltage, Drain to Source  150 V  
      Voltage, Forward, Diode  1.5 V  
      Voltage, Gate to Source  ±20 V  
    關鍵詞         

    SUD15N15-95-E3/BKN相關搜索

    Brand/Series SUD Series  Siliconix / Vishay Brand/Series SUD Series  MOSFET Transistors Brand/Series SUD Series  Siliconix / Vishay MOSFET Transistors Brand/Series SUD Series   Channel Type N  Siliconix / Vishay Channel Type N  MOSFET Transistors Channel Type N  Siliconix / Vishay MOSFET Transistors Channel Type N   Current, Drain 15 A  Siliconix / Vishay Current, Drain 15 A  MOSFET Transistors Current, Drain 15 A  Siliconix / Vishay MOSFET Transistors Current, Drain 15 A   Fall Time 45 ns  Siliconix / Vishay Fall Time 45 ns  MOSFET Transistors Fall Time 45 ns  Siliconix / Vishay MOSFET Transistors Fall Time 45 ns   Gate Charge, Total 25 nC  Siliconix / Vishay Gate Charge, Total 25 nC  MOSFET Transistors Gate Charge, Total 25 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 25 nC   Operating and Storage Temperature –55 to +175 °C  Siliconix / Vishay Operating and Storage Temperature –55 to +175 °C  MOSFET Transistors Operating and Storage Temperature –55 to +175 °C  Siliconix / Vishay MOSFET Transistors Operating and Storage Temperature –55 to +175 °C   Package Type TO-252  Siliconix / Vishay Package Type TO-252  MOSFET Transistors Package Type TO-252  Siliconix / Vishay MOSFET Transistors Package Type TO-252   Polarization N-Channel  Siliconix / Vishay Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Siliconix / Vishay MOSFET Transistors Polarization N-Channel   Power Dissipation 62 W  Siliconix / Vishay Power Dissipation 62 W  MOSFET Transistors Power Dissipation 62 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 62 W   Resistance, Drain to Source On 0.095 Ohm  Siliconix / Vishay Resistance, Drain to Source On 0.095 Ohm  MOSFET Transistors Resistance, Drain to Source On 0.095 Ohm  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.095 Ohm   Resistance, Thermal, Junction to Case 2.4 °C/W  Siliconix / Vishay Resistance, Thermal, Junction to Case 2.4 °C/W  MOSFET Transistors Resistance, Thermal, Junction to Case 2.4 °C/W  Siliconix / Vishay MOSFET Transistors Resistance, Thermal, Junction to Case 2.4 °C/W   Temperature, Operating, Maximum +175 °C  Siliconix / Vishay Temperature, Operating, Maximum +175 °C  MOSFET Transistors Temperature, Operating, Maximum +175 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +175 °C   Temperature, Operating, Minimum –55 °C  Siliconix / Vishay Temperature, Operating, Minimum –55 °C  MOSFET Transistors Temperature, Operating, Minimum –55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum –55 °C   Thermal Resistance, Junction to Ambient 20 °C/W  Siliconix / Vishay Thermal Resistance, Junction to Ambient 20 °C/W  MOSFET Transistors Thermal Resistance, Junction to Ambient 20 °C/W  Siliconix / Vishay MOSFET Transistors Thermal Resistance, Junction to Ambient 20 °C/W   Time, Rise 55 ns  Siliconix / Vishay Time, Rise 55 ns  MOSFET Transistors Time, Rise 55 ns  Siliconix / Vishay MOSFET Transistors Time, Rise 55 ns   Time, Turn-Off Delay 25 ns  Siliconix / Vishay Time, Turn-Off Delay 25 ns  MOSFET Transistors Time, Turn-Off Delay 25 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 25 ns   Time, Turn-On Delay 12 ns  Siliconix / Vishay Time, Turn-On Delay 12 ns  MOSFET Transistors Time, Turn-On Delay 12 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 12 ns   Transconductance, Forward 25 S  Siliconix / Vishay Transconductance, Forward 25 S  MOSFET Transistors Transconductance, Forward 25 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 25 S   Voltage, Breakdown, Drain to Source 150 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source 150 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 150 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source 150 V   Voltage, Drain to Source 150 V  Siliconix / Vishay Voltage, Drain to Source 150 V  MOSFET Transistors Voltage, Drain to Source 150 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source 150 V   Voltage, Forward, Diode 1.5 V  Siliconix / Vishay Voltage, Forward, Diode 1.5 V  MOSFET Transistors Voltage, Forward, Diode 1.5 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 1.5 V   Voltage, Gate to Source ±20 V  Siliconix / Vishay Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±20 V  
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