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SI9407BDY-T1-GE3 - 

MOSFET, P-Ch, Vds -60V, Vgs +/- 20V, Rds(on) 150mohm, Id 4.7A, SO-8, Pd 5W

Siliconix / Vishay SI9407BDY-T1-GE3
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制造商產(chǎn)品編號(hào)：
SI9407BDY-T1-GE3
倉庫庫存編號(hào)：
70026452
技術(shù)數(shù)據(jù)表：
View SI9407BDY-T1-GE3 Datasheet Datasheet
訂購熱線： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫龐大，部分產(chǎn)品信息可能未能及時(shí)更新，下單前請(qǐng)與銷售人員確認(rèn)好實(shí)時(shí)在庫數(shù)量，謝謝合作！

SI9407BDY-T1-GE3產(chǎn)品概述

Features:
  • Halogen-Free Option Available
  • Low-Side Switching
  • Low On-Resistance: 5 Ω
  • Low Threshold: 0.9 V (Typ.)
  • Fast Switching Speed: 35 ns (Typ.)
  • TrenchFET® Power MOSFETs: 1.5 V Rated
  • ESD Protected: 2000 V

    Applications:
  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
  • Battery Operated Systems
  • Power Supply Converter Circuits
  • Load/Power Switching Cell Phones, Pagers

    • SI9407BDY-T1-GE3產(chǎn)品信息

      Brand/Series  SI94 Series  
      Capacitance, Input  600 pF @ -30 V  
      Channel Mode  Enhancement  
      Channel Type  P  
      Configuration  Quad Drain, Triple Source  
      Current, Drain  -2.6 A  
      Dimensions  5 x 4 x 1.55 mm  
      Height  0.061" (1.55mm)  
      Length  0.196" (5mm)  
      Mounting Type  Surface Mount  
      Number of Elements per Chip  1  
      Number of Pins  8  
      Package Type  SO-8  
      Power Dissipation  5 W  
      Resistance, Drain to Source On  0.15 Ω  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Time, Turn-Off Delay  40 ns  
      Time, Turn-On Delay  30 ns  
      Transconductance, Forward  8.5 S  
      Typical Gate Charge @ Vgs  14.5 nC @ -10 V  
      Voltage, Drain to Source  -60 V  
      Voltage, Forward, Diode  -1.2 V  
      Voltage, Gate to Source  ±20 V  
      Width  0.157" (4mm)  
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    SI9407BDY-T1-GE3相關(guān)搜索

    Brand/Series SI94 Series  Siliconix / Vishay Brand/Series SI94 Series  MOSFET Transistors Brand/Series SI94 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI94 Series   Capacitance, Input 600 pF @ -30 V  Siliconix / Vishay Capacitance, Input 600 pF @ -30 V  MOSFET Transistors Capacitance, Input 600 pF @ -30 V  Siliconix / Vishay MOSFET Transistors Capacitance, Input 600 pF @ -30 V   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type P  Siliconix / Vishay Channel Type P  MOSFET Transistors Channel Type P  Siliconix / Vishay MOSFET Transistors Channel Type P   Configuration Quad Drain, Triple Source  Siliconix / Vishay Configuration Quad Drain, Triple Source  MOSFET Transistors Configuration Quad Drain, Triple Source  Siliconix / Vishay MOSFET Transistors Configuration Quad Drain, Triple Source   Current, Drain -2.6 A  Siliconix / Vishay Current, Drain -2.6 A  MOSFET Transistors Current, Drain -2.6 A  Siliconix / Vishay MOSFET Transistors Current, Drain -2.6 A   Dimensions 5 x 4 x 1.55 mm  Siliconix / Vishay Dimensions 5 x 4 x 1.55 mm  MOSFET Transistors Dimensions 5 x 4 x 1.55 mm  Siliconix / Vishay MOSFET Transistors Dimensions 5 x 4 x 1.55 mm   Height 0.061" (1.55mm)  Siliconix / Vishay Height 0.061" (1.55mm)  MOSFET Transistors Height 0.061" (1.55mm)  Siliconix / Vishay MOSFET Transistors Height 0.061" (1.55mm)   Length 0.196" (5mm)  Siliconix / Vishay Length 0.196" (5mm)  MOSFET Transistors Length 0.196" (5mm)  Siliconix / Vishay MOSFET Transistors Length 0.196" (5mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  Siliconix / Vishay Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 1   Number of Pins 8  Siliconix / Vishay Number of Pins 8  MOSFET Transistors Number of Pins 8  Siliconix / Vishay MOSFET Transistors Number of Pins 8   Package Type SO-8  Siliconix / Vishay Package Type SO-8  MOSFET Transistors Package Type SO-8  Siliconix / Vishay MOSFET Transistors Package Type SO-8   Power Dissipation 5 W  Siliconix / Vishay Power Dissipation 5 W  MOSFET Transistors Power Dissipation 5 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 5 W   Resistance, Drain to Source On 0.15 Ω  Siliconix / Vishay Resistance, Drain to Source On 0.15 Ω  MOSFET Transistors Resistance, Drain to Source On 0.15 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.15 Ω   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 40 ns  Siliconix / Vishay Time, Turn-Off Delay 40 ns  MOSFET Transistors Time, Turn-Off Delay 40 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 40 ns   Time, Turn-On Delay 30 ns  Siliconix / Vishay Time, Turn-On Delay 30 ns  MOSFET Transistors Time, Turn-On Delay 30 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 30 ns   Transconductance, Forward 8.5 S  Siliconix / Vishay Transconductance, Forward 8.5 S  MOSFET Transistors Transconductance, Forward 8.5 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 8.5 S   Typical Gate Charge @ Vgs 14.5 nC @ -10 V  Siliconix / Vishay Typical Gate Charge @ Vgs 14.5 nC @ -10 V  MOSFET Transistors Typical Gate Charge @ Vgs 14.5 nC @ -10 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 14.5 nC @ -10 V   Voltage, Drain to Source -60 V  Siliconix / Vishay Voltage, Drain to Source -60 V  MOSFET Transistors Voltage, Drain to Source -60 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source -60 V   Voltage, Forward, Diode -1.2 V  Siliconix / Vishay Voltage, Forward, Diode -1.2 V  MOSFET Transistors Voltage, Forward, Diode -1.2 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode -1.2 V   Voltage, Gate to Source ±20 V  Siliconix / Vishay Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.157" (4mm)  Siliconix / Vishay Width 0.157" (4mm)  MOSFET Transistors Width 0.157" (4mm)  Siliconix / Vishay MOSFET Transistors Width 0.157" (4mm)  
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