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SI6966EDQ-T1-E3 - 

MOSFET; 20V, N-Channel 40MOHM 2.5V ESD Trench

Siliconix / Vishay SI6966EDQ-T1-E3
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制造商產(chǎn)品編號:
SI6966EDQ-T1-E3
倉庫庫存編號:
70026259
技術(shù)數(shù)據(jù)表:
View SI6966EDQ-T1-E3 Datasheet Datasheet
訂購熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
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SI6966EDQ-T1-E3產(chǎn)品信息

  Brand/Series  SI69 Series  
  Channel Mode  Enhancement  
  Channel Type  N  
  Configuration  Dual Drain, Dual Gate, Quad  
  Current, Drain  ±5.2 A  
  Dimensions  4.5 x 3.1 x 1.05 mm  
  Gate Charge, Total  15 nC  
  Height  0.041" (1.05mm)  
  Length  0.177" (4.5mm)  
  Mounting Type  Surface Mount  
  Number of Elements per Chip  2  
  Number of Pins  8  
  Package Type  TSSOP  
  Polarization  N-Channel  
  Power Dissipation  1.25 W  
  Resistance, Drain to Source On  0.04 Ω  
  Temperature, Operating  -55 to 150 °C  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Thermal Resistance, Junction to Ambient  115 °C/W  
  Time, Turn-Off Delay  420 ns  
  Time, Turn-On Delay  100 ns  
  Transconductance, Forward  20 S  
  Typical Gate Charge @ Vgs  15 nC @ 4.5 V  
  Voltage, Breakdown, Drain to Source  20 V  
  Voltage, Drain to Source  20 V  
  Voltage, Forward, Diode  1.2 V  
  Voltage, Gate to Source  ±12 V  
  Width  0.122" (3.1mm)  
關(guān)鍵詞         

SI6966EDQ-T1-E3相關(guān)搜索

Brand/Series SI69 Series  Siliconix / Vishay Brand/Series SI69 Series  MOSFET Transistors Brand/Series SI69 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI69 Series   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type N  Siliconix / Vishay Channel Type N  MOSFET Transistors Channel Type N  Siliconix / Vishay MOSFET Transistors Channel Type N   Configuration Dual Drain, Dual Gate, Quad  Siliconix / Vishay Configuration Dual Drain, Dual Gate, Quad  MOSFET Transistors Configuration Dual Drain, Dual Gate, Quad  Siliconix / Vishay MOSFET Transistors Configuration Dual Drain, Dual Gate, Quad   Current, Drain ±5.2 A  Siliconix / Vishay Current, Drain ±5.2 A  MOSFET Transistors Current, Drain ±5.2 A  Siliconix / Vishay MOSFET Transistors Current, Drain ±5.2 A   Dimensions 4.5 x 3.1 x 1.05 mm  Siliconix / Vishay Dimensions 4.5 x 3.1 x 1.05 mm  MOSFET Transistors Dimensions 4.5 x 3.1 x 1.05 mm  Siliconix / Vishay MOSFET Transistors Dimensions 4.5 x 3.1 x 1.05 mm   Gate Charge, Total 15 nC  Siliconix / Vishay Gate Charge, Total 15 nC  MOSFET Transistors Gate Charge, Total 15 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 15 nC   Height 0.041" (1.05mm)  Siliconix / Vishay Height 0.041" (1.05mm)  MOSFET Transistors Height 0.041" (1.05mm)  Siliconix / Vishay MOSFET Transistors Height 0.041" (1.05mm)   Length 0.177" (4.5mm)  Siliconix / Vishay Length 0.177" (4.5mm)  MOSFET Transistors Length 0.177" (4.5mm)  Siliconix / Vishay MOSFET Transistors Length 0.177" (4.5mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 2  Siliconix / Vishay Number of Elements per Chip 2  MOSFET Transistors Number of Elements per Chip 2  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 2   Number of Pins 8  Siliconix / Vishay Number of Pins 8  MOSFET Transistors Number of Pins 8  Siliconix / Vishay MOSFET Transistors Number of Pins 8   Package Type TSSOP  Siliconix / Vishay Package Type TSSOP  MOSFET Transistors Package Type TSSOP  Siliconix / Vishay MOSFET Transistors Package Type TSSOP   Polarization N-Channel  Siliconix / Vishay Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Siliconix / Vishay MOSFET Transistors Polarization N-Channel   Power Dissipation 1.25 W  Siliconix / Vishay Power Dissipation 1.25 W  MOSFET Transistors Power Dissipation 1.25 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 1.25 W   Resistance, Drain to Source On 0.04 Ω  Siliconix / Vishay Resistance, Drain to Source On 0.04 Ω  MOSFET Transistors Resistance, Drain to Source On 0.04 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.04 Ω   Temperature, Operating -55 to 150 °C  Siliconix / Vishay Temperature, Operating -55 to 150 °C  MOSFET Transistors Temperature, Operating -55 to 150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating -55 to 150 °C   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 115 °C/W  Siliconix / Vishay Thermal Resistance, Junction to Ambient 115 °C/W  MOSFET Transistors Thermal Resistance, Junction to Ambient 115 °C/W  Siliconix / Vishay MOSFET Transistors Thermal Resistance, Junction to Ambient 115 °C/W   Time, Turn-Off Delay 420 ns  Siliconix / Vishay Time, Turn-Off Delay 420 ns  MOSFET Transistors Time, Turn-Off Delay 420 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 420 ns   Time, Turn-On Delay 100 ns  Siliconix / Vishay Time, Turn-On Delay 100 ns  MOSFET Transistors Time, Turn-On Delay 100 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 100 ns   Transconductance, Forward 20 S  Siliconix / Vishay Transconductance, Forward 20 S  MOSFET Transistors Transconductance, Forward 20 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 20 S   Typical Gate Charge @ Vgs 15 nC @ 4.5 V  Siliconix / Vishay Typical Gate Charge @ Vgs 15 nC @ 4.5 V  MOSFET Transistors Typical Gate Charge @ Vgs 15 nC @ 4.5 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 15 nC @ 4.5 V   Voltage, Breakdown, Drain to Source 20 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source 20 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 20 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source 20 V   Voltage, Drain to Source 20 V  Siliconix / Vishay Voltage, Drain to Source 20 V  MOSFET Transistors Voltage, Drain to Source 20 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source 20 V   Voltage, Forward, Diode 1.2 V  Siliconix / Vishay Voltage, Forward, Diode 1.2 V  MOSFET Transistors Voltage, Forward, Diode 1.2 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 1.2 V   Voltage, Gate to Source ±12 V  Siliconix / Vishay Voltage, Gate to Source ±12 V  MOSFET Transistors Voltage, Gate to Source ±12 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±12 V   Width 0.122" (3.1mm)  Siliconix / Vishay Width 0.122" (3.1mm)  MOSFET Transistors Width 0.122" (3.1mm)  Siliconix / Vishay MOSFET Transistors Width 0.122" (3.1mm)  
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