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SI6966DQ-T1-E3/BKN - 

MOSFET; 20V, N-CH, 30MOHM, 32M CELL Trench

Siliconix / Vishay SI6966DQ-T1-E3/BKN
聲明:圖片僅供參考,請以實物為準!
制造商產品編號:
SI6966DQ-T1-E3/BKN
倉庫庫存編號:
70026372
技術數據表:
View SI6966DQ-T1-E3/BKN Datasheet Datasheet
訂購熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于產品數據庫龐大,部分產品信息可能未能及時更新,下單前請與銷售人員確認好實時在庫數量,謝謝合作!

SI6966DQ-T1-E3/BKN產品概述

Features:
  • Halogen-Free Option Available
  • TrenchFET® Power MOSFETs
  • ESD Protected: 3000 V
  • SI6966DQ-T1-E3/BKN產品信息

      Brand/Series  SI69 Series  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Dual Drain, Dual Gate, Quad  
      Current, Drain  4 A  
      Dimensions  4.5 x 3.1 x 1.05 mm  
      Gate Charge, Total  11.5 nC  
      Height  0.041" (1.05mm)  
      Length  0.177" (4.5mm)  
      Mounting Type  Surface Mount  
      Number of Elements per Chip  2  
      Number of Pins  8  
      Package Type  TSSOP  
      Polarization  N-Channel  
      Power Dissipation  0.83 W  
      Resistance, Drain to Source On  0.04 Ω  
      Temperature, Operating  -55 to 150 °C  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Thermal Resistance, Junction to Ambient  124 °C/W  
      Time, Turn-Off Delay  36 ns  
      Time, Turn-On Delay  11 ns  
      Transconductance, Forward  20 S  
      Typical Gate Charge @ Vgs  11.5 nC @ 4.5 V  
      Voltage, Breakdown, Drain to Source  20 V  
      Voltage, Drain to Source  20 V  
      Voltage, Forward, Diode  1.2 V  
      Voltage, Gate to Source  ±12 V  
      Width  0.122" (3.1mm)  
    關鍵詞         

    SI6966DQ-T1-E3/BKN相關搜索

    Brand/Series SI69 Series  Siliconix / Vishay Brand/Series SI69 Series  MOSFET Transistors Brand/Series SI69 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI69 Series   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type N  Siliconix / Vishay Channel Type N  MOSFET Transistors Channel Type N  Siliconix / Vishay MOSFET Transistors Channel Type N   Configuration Dual Drain, Dual Gate, Quad  Siliconix / Vishay Configuration Dual Drain, Dual Gate, Quad  MOSFET Transistors Configuration Dual Drain, Dual Gate, Quad  Siliconix / Vishay MOSFET Transistors Configuration Dual Drain, Dual Gate, Quad   Current, Drain 4 A  Siliconix / Vishay Current, Drain 4 A  MOSFET Transistors Current, Drain 4 A  Siliconix / Vishay MOSFET Transistors Current, Drain 4 A   Dimensions 4.5 x 3.1 x 1.05 mm  Siliconix / Vishay Dimensions 4.5 x 3.1 x 1.05 mm  MOSFET Transistors Dimensions 4.5 x 3.1 x 1.05 mm  Siliconix / Vishay MOSFET Transistors Dimensions 4.5 x 3.1 x 1.05 mm   Gate Charge, Total 11.5 nC  Siliconix / Vishay Gate Charge, Total 11.5 nC  MOSFET Transistors Gate Charge, Total 11.5 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 11.5 nC   Height 0.041" (1.05mm)  Siliconix / Vishay Height 0.041" (1.05mm)  MOSFET Transistors Height 0.041" (1.05mm)  Siliconix / Vishay MOSFET Transistors Height 0.041" (1.05mm)   Length 0.177" (4.5mm)  Siliconix / Vishay Length 0.177" (4.5mm)  MOSFET Transistors Length 0.177" (4.5mm)  Siliconix / Vishay MOSFET Transistors Length 0.177" (4.5mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 2  Siliconix / Vishay Number of Elements per Chip 2  MOSFET Transistors Number of Elements per Chip 2  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 2   Number of Pins 8  Siliconix / Vishay Number of Pins 8  MOSFET Transistors Number of Pins 8  Siliconix / Vishay MOSFET Transistors Number of Pins 8   Package Type TSSOP  Siliconix / Vishay Package Type TSSOP  MOSFET Transistors Package Type TSSOP  Siliconix / Vishay MOSFET Transistors Package Type TSSOP   Polarization N-Channel  Siliconix / Vishay Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Siliconix / Vishay MOSFET Transistors Polarization N-Channel   Power Dissipation 0.83 W  Siliconix / Vishay Power Dissipation 0.83 W  MOSFET Transistors Power Dissipation 0.83 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 0.83 W   Resistance, Drain to Source On 0.04 Ω  Siliconix / Vishay Resistance, Drain to Source On 0.04 Ω  MOSFET Transistors Resistance, Drain to Source On 0.04 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.04 Ω   Temperature, Operating -55 to 150 °C  Siliconix / Vishay Temperature, Operating -55 to 150 °C  MOSFET Transistors Temperature, Operating -55 to 150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating -55 to 150 °C   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 124 °C/W  Siliconix / Vishay Thermal Resistance, Junction to Ambient 124 °C/W  MOSFET Transistors Thermal Resistance, Junction to Ambient 124 °C/W  Siliconix / Vishay MOSFET Transistors Thermal Resistance, Junction to Ambient 124 °C/W   Time, Turn-Off Delay 36 ns  Siliconix / Vishay Time, Turn-Off Delay 36 ns  MOSFET Transistors Time, Turn-Off Delay 36 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 36 ns   Time, Turn-On Delay 11 ns  Siliconix / Vishay Time, Turn-On Delay 11 ns  MOSFET Transistors Time, Turn-On Delay 11 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 11 ns   Transconductance, Forward 20 S  Siliconix / Vishay Transconductance, Forward 20 S  MOSFET Transistors Transconductance, Forward 20 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 20 S   Typical Gate Charge @ Vgs 11.5 nC @ 4.5 V  Siliconix / Vishay Typical Gate Charge @ Vgs 11.5 nC @ 4.5 V  MOSFET Transistors Typical Gate Charge @ Vgs 11.5 nC @ 4.5 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 11.5 nC @ 4.5 V   Voltage, Breakdown, Drain to Source 20 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source 20 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 20 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source 20 V   Voltage, Drain to Source 20 V  Siliconix / Vishay Voltage, Drain to Source 20 V  MOSFET Transistors Voltage, Drain to Source 20 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source 20 V   Voltage, Forward, Diode 1.2 V  Siliconix / Vishay Voltage, Forward, Diode 1.2 V  MOSFET Transistors Voltage, Forward, Diode 1.2 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 1.2 V   Voltage, Gate to Source ±12 V  Siliconix / Vishay Voltage, Gate to Source ±12 V  MOSFET Transistors Voltage, Gate to Source ±12 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±12 V   Width 0.122" (3.1mm)  Siliconix / Vishay Width 0.122" (3.1mm)  MOSFET Transistors Width 0.122" (3.1mm)  Siliconix / Vishay MOSFET Transistors Width 0.122" (3.1mm)  
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