Brand/Series |
SI69 Series |
|
Channel Mode |
Enhancement |
|
Channel Type |
N |
|
Configuration |
Dual Drain, Dual Gate, Quad |
|
Current, Drain |
4 A |
|
Dimensions |
4.5 x 3.1 x 1.05 mm |
|
Gate Charge, Total |
11.5 nC |
|
Height |
0.041" (1.05mm) |
|
Length |
0.177" (4.5mm) |
|
Mounting Type |
Surface Mount |
|
Number of Elements per Chip |
2 |
|
Number of Pins |
8 |
|
Package Type |
TSSOP |
|
Polarization |
N-Channel |
|
Power Dissipation |
0.83 W |
|
Resistance, Drain to Source On |
0.04 Ω |
|
Temperature, Operating |
-55 to 150 °C |
|
Temperature, Operating, Maximum |
+150 °C |
|
Temperature, Operating, Minimum |
-55 °C |
|
Temperature, Operating, Range |
-55 to +150 °C |
|
Thermal Resistance, Junction to Ambient |
124 °C/W |
|
Time, Turn-Off Delay |
36 ns |
|
Time, Turn-On Delay |
11 ns |
|
Transconductance, Forward |
20 S |
|
Typical Gate Charge @ Vgs |
11.5 nC @ 4.5 V |
|
Voltage, Breakdown, Drain to Source |
20 V |
|
Voltage, Drain to Source |
20 V |
|
Voltage, Forward, Diode |
1.2 V |
|
Voltage, Gate to Source |
±12 V |
|
Width |
0.122" (3.1mm) |
|
關鍵詞 |