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SI4830CDY-T1-GE3 - 

MOSFET; Dual N-Ch; VDSS 30V; RDS(ON) 0.017Ohm; ID 5.7A; SO-8; PD 1.1W; VGS +/-20V; gFS 1

Siliconix / Vishay SI4830CDY-T1-GE3
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制造商產(chǎn)品編號(hào):
SI4830CDY-T1-GE3
倉(cāng)庫(kù)庫(kù)存編號(hào):
70026112
技術(shù)數(shù)據(jù)表:
View SI4830CDY-T1-GE3 Datasheet Datasheet
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SI4830CDY-T1-GE3產(chǎn)品信息

  Brand/Series  SI48 Series  
  Capacitance, Input  950 pF @ 15 V  
  Channel Mode  Enhancement  
  Channel Type  N  
  Configuration  Single  
  Current, Drain  6.5 A  
  Dimensions  5 x 4 x 1.55 mm  
  Gate Charge, Total  7 nC  
  Height  0.061" (1.55mm)  
  Length  0.196" (5mm)  
  Mounting Type  Surface Mount  
  Number of Elements per Chip  2  
  Number of Pins  8  
  Package Type  SO-8  
  Polarization  Dual N-Channel  
  Power Dissipation  1.1 W  
  Resistance, Drain to Source On  0.025 Ω  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Time, Turn-Off Delay  19 ns  
  Time, Turn-On Delay  9 ns  
  Transconductance, Forward  19 S  
  Typical Gate Charge @ Vgs  16.5 nC @ 15 V  
  Voltage, Breakdown, Drain to Source  30 V  
  Voltage, Drain to Source  30 V  
  Voltage, Forward, Diode  0.75 V  
  Voltage, Gate to Source  ±20 V  
  Width  0.157" (4mm)  
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SI4830CDY-T1-GE3相關(guān)搜索

Brand/Series SI48 Series  Siliconix / Vishay Brand/Series SI48 Series  MOSFET Transistors Brand/Series SI48 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI48 Series   Capacitance, Input 950 pF @ 15 V  Siliconix / Vishay Capacitance, Input 950 pF @ 15 V  MOSFET Transistors Capacitance, Input 950 pF @ 15 V  Siliconix / Vishay MOSFET Transistors Capacitance, Input 950 pF @ 15 V   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type N  Siliconix / Vishay Channel Type N  MOSFET Transistors Channel Type N  Siliconix / Vishay MOSFET Transistors Channel Type N   Configuration Single  Siliconix / Vishay Configuration Single  MOSFET Transistors Configuration Single  Siliconix / Vishay MOSFET Transistors Configuration Single   Current, Drain 6.5 A  Siliconix / Vishay Current, Drain 6.5 A  MOSFET Transistors Current, Drain 6.5 A  Siliconix / Vishay MOSFET Transistors Current, Drain 6.5 A   Dimensions 5 x 4 x 1.55 mm  Siliconix / Vishay Dimensions 5 x 4 x 1.55 mm  MOSFET Transistors Dimensions 5 x 4 x 1.55 mm  Siliconix / Vishay MOSFET Transistors Dimensions 5 x 4 x 1.55 mm   Gate Charge, Total 7 nC  Siliconix / Vishay Gate Charge, Total 7 nC  MOSFET Transistors Gate Charge, Total 7 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 7 nC   Height 0.061" (1.55mm)  Siliconix / Vishay Height 0.061" (1.55mm)  MOSFET Transistors Height 0.061" (1.55mm)  Siliconix / Vishay MOSFET Transistors Height 0.061" (1.55mm)   Length 0.196" (5mm)  Siliconix / Vishay Length 0.196" (5mm)  MOSFET Transistors Length 0.196" (5mm)  Siliconix / Vishay MOSFET Transistors Length 0.196" (5mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 2  Siliconix / Vishay Number of Elements per Chip 2  MOSFET Transistors Number of Elements per Chip 2  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 2   Number of Pins 8  Siliconix / Vishay Number of Pins 8  MOSFET Transistors Number of Pins 8  Siliconix / Vishay MOSFET Transistors Number of Pins 8   Package Type SO-8  Siliconix / Vishay Package Type SO-8  MOSFET Transistors Package Type SO-8  Siliconix / Vishay MOSFET Transistors Package Type SO-8   Polarization Dual N-Channel  Siliconix / Vishay Polarization Dual N-Channel  MOSFET Transistors Polarization Dual N-Channel  Siliconix / Vishay MOSFET Transistors Polarization Dual N-Channel   Power Dissipation 1.1 W  Siliconix / Vishay Power Dissipation 1.1 W  MOSFET Transistors Power Dissipation 1.1 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 1.1 W   Resistance, Drain to Source On 0.025 Ω  Siliconix / Vishay Resistance, Drain to Source On 0.025 Ω  MOSFET Transistors Resistance, Drain to Source On 0.025 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.025 Ω   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 19 ns  Siliconix / Vishay Time, Turn-Off Delay 19 ns  MOSFET Transistors Time, Turn-Off Delay 19 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 19 ns   Time, Turn-On Delay 9 ns  Siliconix / Vishay Time, Turn-On Delay 9 ns  MOSFET Transistors Time, Turn-On Delay 9 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 9 ns   Transconductance, Forward 19 S  Siliconix / Vishay Transconductance, Forward 19 S  MOSFET Transistors Transconductance, Forward 19 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 19 S   Typical Gate Charge @ Vgs 16.5 nC @ 15 V  Siliconix / Vishay Typical Gate Charge @ Vgs 16.5 nC @ 15 V  MOSFET Transistors Typical Gate Charge @ Vgs 16.5 nC @ 15 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 16.5 nC @ 15 V   Voltage, Breakdown, Drain to Source 30 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source 30 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 30 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source 30 V   Voltage, Drain to Source 30 V  Siliconix / Vishay Voltage, Drain to Source 30 V  MOSFET Transistors Voltage, Drain to Source 30 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source 30 V   Voltage, Forward, Diode 0.75 V  Siliconix / Vishay Voltage, Forward, Diode 0.75 V  MOSFET Transistors Voltage, Forward, Diode 0.75 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 0.75 V   Voltage, Gate to Source ±20 V  Siliconix / Vishay Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.157" (4mm)  Siliconix / Vishay Width 0.157" (4mm)  MOSFET Transistors Width 0.157" (4mm)  Siliconix / Vishay MOSFET Transistors Width 0.157" (4mm)  
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