Brand/Series |
SI35 Series |
|
Channel Mode |
Enhancement |
|
Channel Type |
N, P |
|
Configuration |
Single |
|
Current, Drain |
-1.8, 2.5 A |
|
Dimensions |
3.1 x 1.7 x 1 mm |
|
Gate Charge, Total |
2.1/2.4 nC |
|
Height |
0.039" (1mm) |
|
Length |
0.122" (3.1mm) |
|
Mounting Type |
Surface Mount |
|
Number of Elements per Chip |
2 |
|
Number of Pins |
6 |
|
Package Type |
TSOP |
|
Polarization |
N-Channel and P-Channel |
|
Power Dissipation |
1.15 W |
|
Resistance, Drain to Source On |
0.175, 0.36 Ω |
|
Temperature, Operating |
-55 to 150 °C |
|
Temperature, Operating, Maximum |
+150 °C |
|
Temperature, Operating, Minimum |
-55 °C |
|
Temperature, Operating, Range |
-55 to +150 °C |
|
Thermal Resistance, Junction to Ambient |
130 °C/W |
|
Time, Turn-Off Delay |
12, 13 ns |
|
Time, Turn-On Delay |
7, 8 ns |
|
Transconductance, Forward |
2.4, 4.3 S |
|
Typical Gate Charge @ Vgs |
2.1 nC @ 5 V, 2.4 nC @ 5 V |
|
Voltage, Breakdown, Drain to Source |
30/-30 V |
|
Voltage, Drain to Source |
-30, 30 V |
|
Voltage, Forward, Diode |
0.81/-0.83 V |
|
Voltage, Gate to Source |
±20 V |
|
Width |
0.067" (1.7mm) |
|
關(guān)鍵詞 |