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Features:

Halogen-Free Option Available

Low-Side Switching

Low On-Resistance: 5 Ω

Low Threshold: 0.9 V (Typ.)

Fast Switching Speed: 35 ns (Typ.)

TrenchFET® Power MOSFETs: 1.5 V Rated

ESD Protected: 2000 V

Applications:

Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories

Battery Operated Systems

Power Supply Converter Circuits

Load/Power Switching Cell Phones, Pagers

Brand/Series	SI34 Series
Channel Mode	Enhancement
Channel Type	P
Configuration	Quad Drain
Current, Drain	-3.9 A
Dimensions	3.1 x 1.7 x 1 mm
Fall Time	130 ns
Gate Charge, Total	21 nC
Height	0.039" (1mm)
Length	0.122" (3.1mm)
Mounting Type	Surface Mount
Number of Elements per Chip	1
Number of Pins	6
Operating and Storage Temperature	-55 to +150 °C
Package Type	TSOP
Polarization	P-Channel
Power Dissipation	1.9 W
Resistance, Drain to Source On	0.048 Ω
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +150 °C
Thermal Resistance, Junction to Ambient	62.5 °C/W
Time, Turn-Off Delay	125 ns
Time, Turn-On Delay	20 ns
Transconductance, Forward	25 S
Typical Gate Charge @ Vgs	21 nC @ -10 V
Voltage, Breakdown, Drain to Source	-20 V
Voltage, Drain to Source	-20 V
Voltage, Forward, Diode	-0.7 V
Voltage, Gate to Source	±8 V
Width	0.067" (1.7mm)
關鍵詞

Brand/Series SI34 Series  Siliconix / Vishay Brand/Series SI34 Series  MOSFET Transistors Brand/Series SI34 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI34 Series   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type P  Siliconix / Vishay Channel Type P  MOSFET Transistors Channel Type P  Siliconix / Vishay MOSFET Transistors Channel Type P   Configuration Quad Drain  Siliconix / Vishay Configuration Quad Drain  MOSFET Transistors Configuration Quad Drain  Siliconix / Vishay MOSFET Transistors Configuration Quad Drain   Current, Drain -3.9 A  Siliconix / Vishay Current, Drain -3.9 A  MOSFET Transistors Current, Drain -3.9 A  Siliconix / Vishay MOSFET Transistors Current, Drain -3.9 A   Dimensions 3.1 x 1.7 x 1 mm  Siliconix / Vishay Dimensions 3.1 x 1.7 x 1 mm  MOSFET Transistors Dimensions 3.1 x 1.7 x 1 mm  Siliconix / Vishay MOSFET Transistors Dimensions 3.1 x 1.7 x 1 mm   Fall Time 130 ns  Siliconix / Vishay Fall Time 130 ns  MOSFET Transistors Fall Time 130 ns  Siliconix / Vishay MOSFET Transistors Fall Time 130 ns   Gate Charge, Total 21 nC  Siliconix / Vishay Gate Charge, Total 21 nC  MOSFET Transistors Gate Charge, Total 21 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 21 nC   Height 0.039" (1mm)  Siliconix / Vishay Height 0.039" (1mm)  MOSFET Transistors Height 0.039" (1mm)  Siliconix / Vishay MOSFET Transistors Height 0.039" (1mm)   Length 0.122" (3.1mm)  Siliconix / Vishay Length 0.122" (3.1mm)  MOSFET Transistors Length 0.122" (3.1mm)  Siliconix / Vishay MOSFET Transistors Length 0.122" (3.1mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  Siliconix / Vishay Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 1   Number of Pins 6  Siliconix / Vishay Number of Pins 6  MOSFET Transistors Number of Pins 6  Siliconix / Vishay MOSFET Transistors Number of Pins 6   Operating and Storage Temperature -55 to +150 °C  Siliconix / Vishay Operating and Storage Temperature -55 to +150 °C  MOSFET Transistors Operating and Storage Temperature -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Operating and Storage Temperature -55 to +150 °C   Package Type TSOP  Siliconix / Vishay Package Type TSOP  MOSFET Transistors Package Type TSOP  Siliconix / Vishay MOSFET Transistors Package Type TSOP   Polarization P-Channel  Siliconix / Vishay Polarization P-Channel  MOSFET Transistors Polarization P-Channel  Siliconix / Vishay MOSFET Transistors Polarization P-Channel   Power Dissipation 1.9 W  Siliconix / Vishay Power Dissipation 1.9 W  MOSFET Transistors Power Dissipation 1.9 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 1.9 W   Resistance, Drain to Source On 0.048 Ω  Siliconix / Vishay Resistance, Drain to Source On 0.048 Ω  MOSFET Transistors Resistance, Drain to Source On 0.048 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.048 Ω   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 62.5 °C/W  Siliconix / Vishay Thermal Resistance, Junction to Ambient 62.5 °C/W  MOSFET Transistors Thermal Resistance, Junction to Ambient 62.5 °C/W  Siliconix / Vishay MOSFET Transistors Thermal Resistance, Junction to Ambient 62.5 °C/W   Time, Turn-Off Delay 125 ns  Siliconix / Vishay Time, Turn-Off Delay 125 ns  MOSFET Transistors Time, Turn-Off Delay 125 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 125 ns   Time, Turn-On Delay 20 ns  Siliconix / Vishay Time, Turn-On Delay 20 ns  MOSFET Transistors Time, Turn-On Delay 20 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 20 ns   Transconductance, Forward 25 S  Siliconix / Vishay Transconductance, Forward 25 S  MOSFET Transistors Transconductance, Forward 25 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 25 S   Typical Gate Charge @ Vgs 21 nC @ -10 V  Siliconix / Vishay Typical Gate Charge @ Vgs 21 nC @ -10 V  MOSFET Transistors Typical Gate Charge @ Vgs 21 nC @ -10 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 21 nC @ -10 V   Voltage, Breakdown, Drain to Source -20 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source -20 V  MOSFET Transistors Voltage, Breakdown, Drain to Source -20 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source -20 V   Voltage, Drain to Source -20 V  Siliconix / Vishay Voltage, Drain to Source -20 V  MOSFET Transistors Voltage, Drain to Source -20 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source -20 V   Voltage, Forward, Diode -0.7 V  Siliconix / Vishay Voltage, Forward, Diode -0.7 V  MOSFET Transistors Voltage, Forward, Diode -0.7 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode -0.7 V   Voltage, Gate to Source ±8 V  Siliconix / Vishay Voltage, Gate to Source ±8 V  MOSFET Transistors Voltage, Gate to Source ±8 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±8 V   Width 0.067" (1.7mm)  Siliconix / Vishay Width 0.067" (1.7mm)  MOSFET Transistors Width 0.067" (1.7mm)  Siliconix / Vishay MOSFET Transistors Width 0.067" (1.7mm)