Brand/Series |
SI23 Series |
|
Capacitance, Input |
540 pF @ 20 V |
|
Channel Mode |
Enhancement |
|
Channel Type |
N |
|
Configuration |
Single |
|
Current, Drain |
3.9 A |
|
Dimensions |
3.04 x 1.4 x 1.02 mm |
|
Fall Time |
25 ns |
|
Gate Charge, Total |
15 nC |
|
Height |
0.04" (1.02mm) |
|
Length |
0.119" (3.04mm) |
|
Mounting Type |
Surface Mount |
|
Number of Elements per Chip |
1 |
|
Number of Pins |
3 |
|
Operating and Storage Temperature |
–55 to +150 °C |
|
Package Type |
TO-236 |
|
Polarization |
N-Channel |
|
Power Dissipation |
1.25 W |
|
Resistance, Drain to Source On |
0.058 Ω |
|
Temperature, Operating, Maximum |
+150 °C |
|
Temperature, Operating, Minimum |
-55 °C |
|
Temperature, Operating, Range |
-55 to +150 °C |
|
Thermal Resistance, Junction to Ambient |
100 °C/W |
|
Time, Turn-Off Delay |
30 ns |
|
Time, Turn-On Delay |
10 ns |
|
Transconductance, Forward |
11 S |
|
Typical Gate Charge @ Vgs |
10 nC @ 20 V |
|
Voltage, Breakdown, Drain to Source |
40 V |
|
Voltage, Drain to Source |
40 V |
|
Voltage, Forward, Diode |
1.2 V |
|
Voltage, Gate to Source |
±20 V |
|
Width |
0.055" (1.4mm) |
|
關(guān)鍵詞 |