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SI2312BDS-T1-E3/BKN - 

N-CHANNEL 20-V (D-S) MOSFET

Siliconix / Vishay SI2312BDS-T1-E3/BKN
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制造商產(chǎn)品編號(hào):
SI2312BDS-T1-E3/BKN
倉庫庫存編號(hào):
70026355
技術(shù)數(shù)據(jù)表:
View SI2312BDS-T1-E3/BKN Datasheet Datasheet
訂購熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
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SI2312BDS-T1-E3/BKN產(chǎn)品概述



Features:
  • Halogen-Free Option Available
  • TrenchFET® Power MOSFET
  • 100% Rg Tested
  • SI2312BDS-T1-E3/BKN產(chǎn)品信息

      Brand/Series  SI23 Series  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Single  
      Current, Drain  5 A  
      Dimensions  3.04 x 1.4 x 1.02 mm  
      Fall Time  15 ns  
      Gate Charge, Total  12 nC  
      Height  0.04" (1.02mm)  
      Length  0.119" (3.04mm)  
      Mounting Type  Surface Mount  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Operating and Storage Temperature  -55 to +150 °C  
      Package Type  TO-236  
      Polarization  N-Channel  
      Power Dissipation  1.25 W  
      Resistance, Drain to Source On  0.047 Ω  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Thermal Resistance, Junction to Ambient  100 °C/W  
      Time, Turn-Off Delay  55 ns  
      Time, Turn-On Delay  15 ns  
      Transconductance, Forward  30 S  
      Typical Gate Charge @ Vgs  7.5 nC @ 10 V  
      Voltage, Breakdown, Drain to Source  20 V  
      Voltage, Drain to Source  20 V  
      Voltage, Forward, Diode  1.2 V  
      Voltage, Gate to Source  ±8 V  
      Width  0.055" (1.4mm)  
    關(guān)鍵詞         

    SI2312BDS-T1-E3/BKN相關(guān)搜索

    Brand/Series SI23 Series  Siliconix / Vishay Brand/Series SI23 Series  MOSFET Transistors Brand/Series SI23 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI23 Series   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type N  Siliconix / Vishay Channel Type N  MOSFET Transistors Channel Type N  Siliconix / Vishay MOSFET Transistors Channel Type N   Configuration Single  Siliconix / Vishay Configuration Single  MOSFET Transistors Configuration Single  Siliconix / Vishay MOSFET Transistors Configuration Single   Current, Drain 5 A  Siliconix / Vishay Current, Drain 5 A  MOSFET Transistors Current, Drain 5 A  Siliconix / Vishay MOSFET Transistors Current, Drain 5 A   Dimensions 3.04 x 1.4 x 1.02 mm  Siliconix / Vishay Dimensions 3.04 x 1.4 x 1.02 mm  MOSFET Transistors Dimensions 3.04 x 1.4 x 1.02 mm  Siliconix / Vishay MOSFET Transistors Dimensions 3.04 x 1.4 x 1.02 mm   Fall Time 15 ns  Siliconix / Vishay Fall Time 15 ns  MOSFET Transistors Fall Time 15 ns  Siliconix / Vishay MOSFET Transistors Fall Time 15 ns   Gate Charge, Total 12 nC  Siliconix / Vishay Gate Charge, Total 12 nC  MOSFET Transistors Gate Charge, Total 12 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 12 nC   Height 0.04" (1.02mm)  Siliconix / Vishay Height 0.04" (1.02mm)  MOSFET Transistors Height 0.04" (1.02mm)  Siliconix / Vishay MOSFET Transistors Height 0.04" (1.02mm)   Length 0.119" (3.04mm)  Siliconix / Vishay Length 0.119" (3.04mm)  MOSFET Transistors Length 0.119" (3.04mm)  Siliconix / Vishay MOSFET Transistors Length 0.119" (3.04mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  Siliconix / Vishay Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  Siliconix / Vishay Number of Pins 3  MOSFET Transistors Number of Pins 3  Siliconix / Vishay MOSFET Transistors Number of Pins 3   Operating and Storage Temperature -55 to +150 °C  Siliconix / Vishay Operating and Storage Temperature -55 to +150 °C  MOSFET Transistors Operating and Storage Temperature -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Operating and Storage Temperature -55 to +150 °C   Package Type TO-236  Siliconix / Vishay Package Type TO-236  MOSFET Transistors Package Type TO-236  Siliconix / Vishay MOSFET Transistors Package Type TO-236   Polarization N-Channel  Siliconix / Vishay Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Siliconix / Vishay MOSFET Transistors Polarization N-Channel   Power Dissipation 1.25 W  Siliconix / Vishay Power Dissipation 1.25 W  MOSFET Transistors Power Dissipation 1.25 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 1.25 W   Resistance, Drain to Source On 0.047 Ω  Siliconix / Vishay Resistance, Drain to Source On 0.047 Ω  MOSFET Transistors Resistance, Drain to Source On 0.047 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.047 Ω   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 100 °C/W  Siliconix / Vishay Thermal Resistance, Junction to Ambient 100 °C/W  MOSFET Transistors Thermal Resistance, Junction to Ambient 100 °C/W  Siliconix / Vishay MOSFET Transistors Thermal Resistance, Junction to Ambient 100 °C/W   Time, Turn-Off Delay 55 ns  Siliconix / Vishay Time, Turn-Off Delay 55 ns  MOSFET Transistors Time, Turn-Off Delay 55 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 55 ns   Time, Turn-On Delay 15 ns  Siliconix / Vishay Time, Turn-On Delay 15 ns  MOSFET Transistors Time, Turn-On Delay 15 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 15 ns   Transconductance, Forward 30 S  Siliconix / Vishay Transconductance, Forward 30 S  MOSFET Transistors Transconductance, Forward 30 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 30 S   Typical Gate Charge @ Vgs 7.5 nC @ 10 V  Siliconix / Vishay Typical Gate Charge @ Vgs 7.5 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs 7.5 nC @ 10 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 7.5 nC @ 10 V   Voltage, Breakdown, Drain to Source 20 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source 20 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 20 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source 20 V   Voltage, Drain to Source 20 V  Siliconix / Vishay Voltage, Drain to Source 20 V  MOSFET Transistors Voltage, Drain to Source 20 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source 20 V   Voltage, Forward, Diode 1.2 V  Siliconix / Vishay Voltage, Forward, Diode 1.2 V  MOSFET Transistors Voltage, Forward, Diode 1.2 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 1.2 V   Voltage, Gate to Source ±8 V  Siliconix / Vishay Voltage, Gate to Source ±8 V  MOSFET Transistors Voltage, Gate to Source ±8 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±8 V   Width 0.055" (1.4mm)  Siliconix / Vishay Width 0.055" (1.4mm)  MOSFET Transistors Width 0.055" (1.4mm)  Siliconix / Vishay MOSFET Transistors Width 0.055" (1.4mm)  
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