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SI1905DL-T1-E3/BKN - 

MOSFET; Dual P-CH 1.8V (G-S) Trench

Siliconix / Vishay SI1905DL-T1-E3/BKN
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制造商產(chǎn)品編號:
SI1905DL-T1-E3/BKN
倉庫庫存編號:
70026353
技術(shù)數(shù)據(jù)表:
View SI1905DL-T1-E3/BKN Datasheet Datasheet
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SI1905DL-T1-E3/BKN產(chǎn)品信息

  Brand/Series  SI19 Series  
  Channel Mode  Enhancement  
  Channel Type  P  
  Configuration  Single  
  Current, Drain  ±0.57 A  
  Dimensions  2.2 x 1.35 x 1 mm  
  Gate Charge, Total  1.5 nC  
  Height  0.039" (1mm)  
  Length  0.086" (2.2mm)  
  Mounting Type  Surface Mount  
  Number of Elements per Chip  2  
  Number of Pins  6  
  Package Type  SC-70  
  Polarization  P-Channel  
  Power Dissipation  0.27 W  
  Resistance, Drain to Source On  1.2 Ω  
  Temperature, Operating  -55 to 150 °C  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Thermal Resistance, Junction to Ambient  400 °C/W  
  Time, Turn-Off Delay  10 ns  
  Time, Turn-On Delay  6 ns  
  Transconductance, Forward  1.2 S  
  Typical Gate Charge @ Vgs  1.5 nC @ -4.5 V  
  Voltage, Breakdown, Drain to Source  -8 V  
  Voltage, Drain to Source  -8 V  
  Voltage, Forward, Diode  -1.2 V  
  Voltage, Gate to Source  ±8 V  
  Width  0.053" (1.35mm)  
關(guān)鍵詞         

SI1905DL-T1-E3/BKN相關(guān)搜索

Brand/Series SI19 Series  Siliconix / Vishay Brand/Series SI19 Series  MOSFET Transistors Brand/Series SI19 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI19 Series   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type P  Siliconix / Vishay Channel Type P  MOSFET Transistors Channel Type P  Siliconix / Vishay MOSFET Transistors Channel Type P   Configuration Single  Siliconix / Vishay Configuration Single  MOSFET Transistors Configuration Single  Siliconix / Vishay MOSFET Transistors Configuration Single   Current, Drain ±0.57 A  Siliconix / Vishay Current, Drain ±0.57 A  MOSFET Transistors Current, Drain ±0.57 A  Siliconix / Vishay MOSFET Transistors Current, Drain ±0.57 A   Dimensions 2.2 x 1.35 x 1 mm  Siliconix / Vishay Dimensions 2.2 x 1.35 x 1 mm  MOSFET Transistors Dimensions 2.2 x 1.35 x 1 mm  Siliconix / Vishay MOSFET Transistors Dimensions 2.2 x 1.35 x 1 mm   Gate Charge, Total 1.5 nC  Siliconix / Vishay Gate Charge, Total 1.5 nC  MOSFET Transistors Gate Charge, Total 1.5 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 1.5 nC   Height 0.039" (1mm)  Siliconix / Vishay Height 0.039" (1mm)  MOSFET Transistors Height 0.039" (1mm)  Siliconix / Vishay MOSFET Transistors Height 0.039" (1mm)   Length 0.086" (2.2mm)  Siliconix / Vishay Length 0.086" (2.2mm)  MOSFET Transistors Length 0.086" (2.2mm)  Siliconix / Vishay MOSFET Transistors Length 0.086" (2.2mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 2  Siliconix / Vishay Number of Elements per Chip 2  MOSFET Transistors Number of Elements per Chip 2  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 2   Number of Pins 6  Siliconix / Vishay Number of Pins 6  MOSFET Transistors Number of Pins 6  Siliconix / Vishay MOSFET Transistors Number of Pins 6   Package Type SC-70  Siliconix / Vishay Package Type SC-70  MOSFET Transistors Package Type SC-70  Siliconix / Vishay MOSFET Transistors Package Type SC-70   Polarization P-Channel  Siliconix / Vishay Polarization P-Channel  MOSFET Transistors Polarization P-Channel  Siliconix / Vishay MOSFET Transistors Polarization P-Channel   Power Dissipation 0.27 W  Siliconix / Vishay Power Dissipation 0.27 W  MOSFET Transistors Power Dissipation 0.27 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 0.27 W   Resistance, Drain to Source On 1.2 Ω  Siliconix / Vishay Resistance, Drain to Source On 1.2 Ω  MOSFET Transistors Resistance, Drain to Source On 1.2 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 1.2 Ω   Temperature, Operating -55 to 150 °C  Siliconix / Vishay Temperature, Operating -55 to 150 °C  MOSFET Transistors Temperature, Operating -55 to 150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating -55 to 150 °C   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 400 °C/W  Siliconix / Vishay Thermal Resistance, Junction to Ambient 400 °C/W  MOSFET Transistors Thermal Resistance, Junction to Ambient 400 °C/W  Siliconix / Vishay MOSFET Transistors Thermal Resistance, Junction to Ambient 400 °C/W   Time, Turn-Off Delay 10 ns  Siliconix / Vishay Time, Turn-Off Delay 10 ns  MOSFET Transistors Time, Turn-Off Delay 10 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 10 ns   Time, Turn-On Delay 6 ns  Siliconix / Vishay Time, Turn-On Delay 6 ns  MOSFET Transistors Time, Turn-On Delay 6 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 6 ns   Transconductance, Forward 1.2 S  Siliconix / Vishay Transconductance, Forward 1.2 S  MOSFET Transistors Transconductance, Forward 1.2 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 1.2 S   Typical Gate Charge @ Vgs 1.5 nC @ -4.5 V  Siliconix / Vishay Typical Gate Charge @ Vgs 1.5 nC @ -4.5 V  MOSFET Transistors Typical Gate Charge @ Vgs 1.5 nC @ -4.5 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 1.5 nC @ -4.5 V   Voltage, Breakdown, Drain to Source -8 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source -8 V  MOSFET Transistors Voltage, Breakdown, Drain to Source -8 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source -8 V   Voltage, Drain to Source -8 V  Siliconix / Vishay Voltage, Drain to Source -8 V  MOSFET Transistors Voltage, Drain to Source -8 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source -8 V   Voltage, Forward, Diode -1.2 V  Siliconix / Vishay Voltage, Forward, Diode -1.2 V  MOSFET Transistors Voltage, Forward, Diode -1.2 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode -1.2 V   Voltage, Gate to Source ±8 V  Siliconix / Vishay Voltage, Gate to Source ±8 V  MOSFET Transistors Voltage, Gate to Source ±8 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±8 V   Width 0.053" (1.35mm)  Siliconix / Vishay Width 0.053" (1.35mm)  MOSFET Transistors Width 0.053" (1.35mm)  Siliconix / Vishay MOSFET Transistors Width 0.053" (1.35mm)  
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