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SI1034X-T1-E3 - 

MOSFET, Power; N-Ch; VDSS 20V; RDS(ON) 5 Ohms; ID 180mA; SC-89 (SOT-490); PD 250mW

Siliconix / Vishay SI1034X-T1-E3
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制造商產(chǎn)品編號(hào):
SI1034X-T1-E3
倉庫庫存編號(hào):
70026089
技術(shù)數(shù)據(jù)表:
View SI1034X-T1-E3 Datasheet Datasheet
訂購熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫龐大,部分產(chǎn)品信息可能未能及時(shí)更新,下單前請(qǐng)與銷售人員確認(rèn)好實(shí)時(shí)在庫數(shù)量,謝謝合作!

SI1034X-T1-E3產(chǎn)品概述

Features:
  • Halogen-Free Option Available
  • Low-Side Switching
  • Low On-Resistance: 5 Ω
  • Low Threshold: 0.9 V (Typ.)
  • Fast Switching Speed: 35 ns (Typ.)
  • TrenchFET® Power MOSFETs: 1.5 V Rated
  • ESD Protected: 2000 V

    Applications:
  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
  • Battery Operated Systems
  • Power Supply Converter Circuits
  • Load/Power Switching Cell Phones, Pagers
  • SI1034X-T1-E3產(chǎn)品信息

      Brand/Series  SI10 Series  
      Channel Type  N  
      Current, Drain  180 mA  
      Gate Charge, Total  750 pC  
      Package Type  SC-89 (SOT-490)  
      Polarization  N-Channel  
      Power Dissipation  250 mW  
      Resistance, Drain to Source On  5 Ohm  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  –55 °C  
      Time, Turn-Off Delay  50 ns  
      Time, Turn-On Delay  50 ns  
      Transconductance, Forward  0.5 S  
      Voltage, Breakdown, Drain to Source  20 V  
      Voltage, Forward, Diode  1.2 V  
      Voltage, Gate to Source  ±5 V  
    關(guān)鍵詞         

    SI1034X-T1-E3相關(guān)搜索

    Brand/Series SI10 Series  Siliconix / Vishay Brand/Series SI10 Series  MOSFET Transistors Brand/Series SI10 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI10 Series   Channel Type N  Siliconix / Vishay Channel Type N  MOSFET Transistors Channel Type N  Siliconix / Vishay MOSFET Transistors Channel Type N   Current, Drain 180 mA  Siliconix / Vishay Current, Drain 180 mA  MOSFET Transistors Current, Drain 180 mA  Siliconix / Vishay MOSFET Transistors Current, Drain 180 mA   Gate Charge, Total 750 pC  Siliconix / Vishay Gate Charge, Total 750 pC  MOSFET Transistors Gate Charge, Total 750 pC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 750 pC   Package Type SC-89 (SOT-490)  Siliconix / Vishay Package Type SC-89 (SOT-490)  MOSFET Transistors Package Type SC-89 (SOT-490)  Siliconix / Vishay MOSFET Transistors Package Type SC-89 (SOT-490)   Polarization N-Channel  Siliconix / Vishay Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Siliconix / Vishay MOSFET Transistors Polarization N-Channel   Power Dissipation 250 mW  Siliconix / Vishay Power Dissipation 250 mW  MOSFET Transistors Power Dissipation 250 mW  Siliconix / Vishay MOSFET Transistors Power Dissipation 250 mW   Resistance, Drain to Source On 5 Ohm  Siliconix / Vishay Resistance, Drain to Source On 5 Ohm  MOSFET Transistors Resistance, Drain to Source On 5 Ohm  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 5 Ohm   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum –55 °C  Siliconix / Vishay Temperature, Operating, Minimum –55 °C  MOSFET Transistors Temperature, Operating, Minimum –55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum –55 °C   Time, Turn-Off Delay 50 ns  Siliconix / Vishay Time, Turn-Off Delay 50 ns  MOSFET Transistors Time, Turn-Off Delay 50 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 50 ns   Time, Turn-On Delay 50 ns  Siliconix / Vishay Time, Turn-On Delay 50 ns  MOSFET Transistors Time, Turn-On Delay 50 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 50 ns   Transconductance, Forward 0.5 S  Siliconix / Vishay Transconductance, Forward 0.5 S  MOSFET Transistors Transconductance, Forward 0.5 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 0.5 S   Voltage, Breakdown, Drain to Source 20 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source 20 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 20 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source 20 V   Voltage, Forward, Diode 1.2 V  Siliconix / Vishay Voltage, Forward, Diode 1.2 V  MOSFET Transistors Voltage, Forward, Diode 1.2 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 1.2 V   Voltage, Gate to Source ±5 V  Siliconix / Vishay Voltage, Gate to Source ±5 V  MOSFET Transistors Voltage, Gate to Source ±5 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±5 V  
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