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產(chǎn)品分類：Discrete Semiconductors,規(guī)格：Voltage, Breakdown, Drain to Source 30 V,

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Siliconix / Vishay
MOSFET; TO-220 30V 75A 4MOHM
產(chǎn)品分類：Discrete Semiconductors,規(guī)格：Voltage, Breakdown, Drain to Source 30 V,
型號(hào)：SUP75N03-04-E3
倉(cāng)庫(kù)庫(kù)存編號(hào)：70026316
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Siliconix / Vishay
Semiconcuctor, Mosfet; TrenchFET; N-Channel; 30V; 30A; 3.7mohm @ 10V; PowerPAK SO-8
產(chǎn)品分類：Discrete Semiconductors,規(guī)格：Voltage, Breakdown, Drain to Source 30 V,
型號(hào)：SIRA10DP-T1-GE3
倉(cāng)庫(kù)庫(kù)存編號(hào)：70243886
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International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 2.6Milliohms; ID 161A; D-Pak (TO-252AA); VF 1V
產(chǎn)品分類：Discrete Semiconductors,規(guī)格：Voltage, Breakdown, Drain to Source 30 V,
型號(hào)：IRLR7843PBF
倉(cāng)庫(kù)庫(kù)存編號(hào)：70017472
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Siliconix / Vishay
Semiconcuctor, Mosfet; TrenchFET; N-Channel; 30V; 25A; 4.3mohm @ 10V; PowerPAK 1212-8
產(chǎn)品分類：Discrete Semiconductors,規(guī)格：Voltage, Breakdown, Drain to Source 30 V,
型號(hào)：SISA12DN-T1-GE3
倉(cāng)庫(kù)庫(kù)存編號(hào)：70243892
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Siliconix / Vishay
SI4936BDY-T1-E3 Dual N-channel MOSFET Transistor, 5.9 A, 30 V, 8-Pin SOIC
產(chǎn)品分類：Discrete Semiconductors,規(guī)格：Voltage, Breakdown, Drain to Source 30 V,
型號(hào)：SI4936BDY-T1-E3
倉(cāng)庫(kù)庫(kù)存編號(hào)：70026235
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Siliconix / Vishay
MOSFET, Power; Dual N-Ch; VDSS 30V; RDS(ON) 0.032Ohm; ID 4.4A; SO-8; PD 1.1W; VGS +/-20
產(chǎn)品分類：Discrete Semiconductors,規(guī)格：Voltage, Breakdown, Drain to Source 30 V,
型號(hào)：SI4936ADY-T1-E3
倉(cāng)庫(kù)庫(kù)存編號(hào)：70026117
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International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 7 Milliohms; ID 116A; D2Pak; PD 180W; VGS +/-16V
產(chǎn)品分類：Discrete Semiconductors,規(guī)格：Voltage, Breakdown, Drain to Source 30 V,
型號(hào)：IRL2203NSPBF
倉(cāng)庫(kù)庫(kù)存編號(hào)：70017615
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Siliconix / Vishay
Semiconcuctor, Mosfet; TrenchFET; N-Channel; 30V; 50A; 2mohm @ 10V; PowerPAK SO-8
產(chǎn)品分類：Discrete Semiconductors,規(guī)格：Voltage, Breakdown, Drain to Source 30 V,
型號(hào)：SIRA02DP-T1-GE3
倉(cāng)庫(kù)庫(kù)存編號(hào)：70243883
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Siliconix / Vishay
MOSFET; 30V Dual N-Channel 2.5V Rated Trench
產(chǎn)品分類：Discrete Semiconductors,規(guī)格：Voltage, Breakdown, Drain to Source 30 V,
型號(hào)：SI6954ADQ-T1-E3/BKN
倉(cāng)庫(kù)庫(kù)存編號(hào)：70026371
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Siliconix / Vishay
N-CHANNEL 30-V (D-S) MOSFET
產(chǎn)品分類：Discrete Semiconductors,規(guī)格：Voltage, Breakdown, Drain to Source 30 V,
型號(hào)：SUD50N03-09P-E3/BKN
倉(cāng)庫(kù)庫(kù)存編號(hào)：70026393
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Siliconix / Vishay
Semiconcuctor, Mosfet; TrenchFET; N-Channel; 30V; 40A; 2.5mohm @ 10V; PowerPAK 1212-8
產(chǎn)品分類：Discrete Semiconductors,規(guī)格：Voltage, Breakdown, Drain to Source 30 V,
型號(hào)：SIS476DN-T1-GE3
倉(cāng)庫(kù)庫(kù)存編號(hào)：70243890
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Siliconix / Vishay
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.0058Ohm; ID 11A; SO-8; PD 1.6W; VGS +/-20V; -55
產(chǎn)品分類：Discrete Semiconductors,規(guī)格：Voltage, Breakdown, Drain to Source 30 V,
型號(hào)：SI4888DY-T1-E3
倉(cāng)庫(kù)庫(kù)存編號(hào)：70026115
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Siliconix / Vishay
MOSFET; Dual N-Channel 30-V (D-S)
產(chǎn)品分類：Discrete Semiconductors,規(guī)格：Voltage, Breakdown, Drain to Source 30 V,
型號(hào)：SI4922BDY-T1-E3
倉(cāng)庫(kù)庫(kù)存編號(hào)：70026232
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Fuji Semiconductor
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 7.5Milliohms; ID +/-50A; TO-220; PD 60W; VGS +/
產(chǎn)品分類：Discrete Semiconductors,規(guī)格：Voltage, Breakdown, Drain to Source 30 V,
型號(hào)：2SK2687-01
倉(cāng)庫(kù)庫(kù)存編號(hào)：70212519
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Siliconix / Vishay
SI7218DN-T1-E3 Dual N-channel MOSFET Module, 24 A, 30 V, 8-Pin PowerPAK 1212
產(chǎn)品分類：Discrete Semiconductors,規(guī)格：Voltage, Breakdown, Drain to Source 30 V,
型號(hào)：SI7218DN-T1-E3
倉(cāng)庫(kù)庫(kù)存編號(hào)：70026267
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ON Semiconductor
MOSFET; Single N-Ch; VDSS 30V; RDS(ON) 1.4Ohms; ID 154mA; SC-75/SOT-416; PD 300mW
產(chǎn)品分類：Discrete Semiconductors,規(guī)格：Voltage, Breakdown, Drain to Source 30 V,
型號(hào)：NTA7002NT1G
倉(cāng)庫(kù)庫(kù)存編號(hào)：70100693
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International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 7.5Milliohms; ID 65A; D-Pak (TO-252AA); PD 75W
產(chǎn)品分類：Discrete Semiconductors,規(guī)格：Voltage, Breakdown, Drain to Source 30 V,
型號(hào)：IRLR7821PBF
倉(cāng)庫(kù)庫(kù)存編號(hào)：70017114
搜索

Siliconix / Vishay
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.0026Ohm; ID 17A; SO-8; PD 1.6W; VGS +/-12V; -55
產(chǎn)品分類：Discrete Semiconductors,規(guī)格：Voltage, Breakdown, Drain to Source 30 V,
型號(hào)：SI4368DY-T1-E3
倉(cāng)庫(kù)庫(kù)存編號(hào)：70026106
搜索

International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 11 Milliohms; ID 10.8A; SO-8; PD 2.5W; VGS +/-20
產(chǎn)品分類：Discrete Semiconductors,規(guī)格：Voltage, Breakdown, Drain to Source 30 V,
型號(hào)：IRF7811AVTRPBF
倉(cāng)庫(kù)庫(kù)存編號(hào)：70017450
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Siliconix / Vishay
DUAL N-CHANNEL 30-V(D-S) MOSFE
產(chǎn)品分類：Discrete Semiconductors,規(guī)格：Voltage, Breakdown, Drain to Source 30 V,
型號(hào)：SI4936BDY-T1-E3/BKN
倉(cāng)庫(kù)庫(kù)存編號(hào)：70026362
搜索

Siliconix / Vishay
DUAL N-CH 30V (D-S) RATED MOSFET
產(chǎn)品分類：Discrete Semiconductors,規(guī)格：Voltage, Breakdown, Drain to Source 30 V,
型號(hào)：SI5902DC-T1-E3
倉(cāng)庫(kù)庫(kù)存編號(hào)：70026249
搜索

International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 2.3Milliohms; ID 210A; TO-220AB; PD 230W; -55de
產(chǎn)品分類：Discrete Semiconductors,規(guī)格：Voltage, Breakdown, Drain to Source 30 V,
型號(hào)：IRF3703PBF
倉(cāng)庫(kù)庫(kù)存編號(hào)：70017482
搜索

Siliconix / Vishay
N-Channel 30-V (D-S) 175 DEG.C MOSFET
產(chǎn)品分類：Discrete Semiconductors,規(guī)格：Voltage, Breakdown, Drain to Source 30 V,
型號(hào)：SUD50N03-06P-E3
倉(cāng)庫(kù)庫(kù)存編號(hào)：70026311
搜索

International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.06Ohm; ID 15A; SO-8; PD 2.5W; VGS +/-12V; gFS 4
產(chǎn)品分類：Discrete Semiconductors,規(guī)格：Voltage, Breakdown, Drain to Source 30 V,
型號(hào)：IRF7455PBF
倉(cāng)庫(kù)庫(kù)存編號(hào)：70016995
搜索

Siliconix / Vishay
N-Channel 30-V (D-S) 175 DEG.C MOSFET
產(chǎn)品分類：Discrete Semiconductors,規(guī)格：Voltage, Breakdown, Drain to Source 30 V,
型號(hào)：SUD50N03-06P-E3/BKN
倉(cāng)庫(kù)庫(kù)存編號(hào)：70026392
搜索

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