規(guī)格:Voltage, Breakdown, Drain to Source 30 V,
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英國(guó)2號(hào)倉(cāng)庫(kù)
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Semiconductors
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International Rectifier (18)
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Siliconix / Vishay
MOSFET; TO-220 30V 75A 4MOHM
規(guī)格:Voltage, Breakdown, Drain to Source 30 V,
型號(hào):
SUP75N03-04-E3
倉(cāng)庫(kù)庫(kù)存編號(hào):
70026316
搜索
Siliconix / Vishay
Semiconcuctor, Mosfet; TrenchFET; N-Channel; 30V; 30A; 3.7mohm @ 10V; PowerPAK SO-8
規(guī)格:Voltage, Breakdown, Drain to Source 30 V,
型號(hào):
SIRA10DP-T1-GE3
倉(cāng)庫(kù)庫(kù)存編號(hào):
70243886
搜索
International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 2.6Milliohms; ID 161A; D-Pak (TO-252AA); VF 1V
規(guī)格:Voltage, Breakdown, Drain to Source 30 V,
型號(hào):
IRLR7843PBF
倉(cāng)庫(kù)庫(kù)存編號(hào):
70017472
搜索
Siliconix / Vishay
Semiconcuctor, Mosfet; TrenchFET; N-Channel; 30V; 25A; 4.3mohm @ 10V; PowerPAK 1212-8
規(guī)格:Voltage, Breakdown, Drain to Source 30 V,
型號(hào):
SISA12DN-T1-GE3
倉(cāng)庫(kù)庫(kù)存編號(hào):
70243892
搜索
Siliconix / Vishay
SI4936BDY-T1-E3 Dual N-channel MOSFET Transistor, 5.9 A, 30 V, 8-Pin SOIC
規(guī)格:Voltage, Breakdown, Drain to Source 30 V,
型號(hào):
SI4936BDY-T1-E3
倉(cāng)庫(kù)庫(kù)存編號(hào):
70026235
搜索
Siliconix / Vishay
MOSFET, Power; Dual N-Ch; VDSS 30V; RDS(ON) 0.032Ohm; ID 4.4A; SO-8; PD 1.1W; VGS +/-20
規(guī)格:Voltage, Breakdown, Drain to Source 30 V,
型號(hào):
SI4936ADY-T1-E3
倉(cāng)庫(kù)庫(kù)存編號(hào):
70026117
搜索
International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 7 Milliohms; ID 116A; D2Pak; PD 180W; VGS +/-16V
規(guī)格:Voltage, Breakdown, Drain to Source 30 V,
型號(hào):
IRL2203NSPBF
倉(cāng)庫(kù)庫(kù)存編號(hào):
70017615
搜索
Siliconix / Vishay
Semiconcuctor, Mosfet; TrenchFET; N-Channel; 30V; 50A; 2mohm @ 10V; PowerPAK SO-8
規(guī)格:Voltage, Breakdown, Drain to Source 30 V,
型號(hào):
SIRA02DP-T1-GE3
倉(cāng)庫(kù)庫(kù)存編號(hào):
70243883
搜索
Siliconix / Vishay
MOSFET; 30V Dual N-Channel 2.5V Rated Trench
規(guī)格:Voltage, Breakdown, Drain to Source 30 V,
型號(hào):
SI6954ADQ-T1-E3/BKN
倉(cāng)庫(kù)庫(kù)存編號(hào):
70026371
搜索
Siliconix / Vishay
N-CHANNEL 30-V (D-S) MOSFET
規(guī)格:Voltage, Breakdown, Drain to Source 30 V,
型號(hào):
SUD50N03-09P-E3/BKN
倉(cāng)庫(kù)庫(kù)存編號(hào):
70026393
搜索
Siliconix / Vishay
Semiconcuctor, Mosfet; TrenchFET; N-Channel; 30V; 40A; 2.5mohm @ 10V; PowerPAK 1212-8
規(guī)格:Voltage, Breakdown, Drain to Source 30 V,
型號(hào):
SIS476DN-T1-GE3
倉(cāng)庫(kù)庫(kù)存編號(hào):
70243890
搜索
Siliconix / Vishay
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.0058Ohm; ID 11A; SO-8; PD 1.6W; VGS +/-20V; -55
規(guī)格:Voltage, Breakdown, Drain to Source 30 V,
型號(hào):
SI4888DY-T1-E3
倉(cāng)庫(kù)庫(kù)存編號(hào):
70026115
搜索
Siliconix / Vishay
MOSFET; Dual N-Channel 30-V (D-S)
規(guī)格:Voltage, Breakdown, Drain to Source 30 V,
型號(hào):
SI4922BDY-T1-E3
倉(cāng)庫(kù)庫(kù)存編號(hào):
70026232
搜索
Fuji Semiconductor
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 7.5Milliohms; ID +/-50A; TO-220; PD 60W; VGS +/
規(guī)格:Voltage, Breakdown, Drain to Source 30 V,
型號(hào):
2SK2687-01
倉(cāng)庫(kù)庫(kù)存編號(hào):
70212519
搜索
Siliconix / Vishay
SI7218DN-T1-E3 Dual N-channel MOSFET Module, 24 A, 30 V, 8-Pin PowerPAK 1212
規(guī)格:Voltage, Breakdown, Drain to Source 30 V,
型號(hào):
SI7218DN-T1-E3
倉(cāng)庫(kù)庫(kù)存編號(hào):
70026267
搜索
ON Semiconductor
MOSFET; Single N-Ch; VDSS 30V; RDS(ON) 1.4Ohms; ID 154mA; SC-75/SOT-416; PD 300mW
規(guī)格:Voltage, Breakdown, Drain to Source 30 V,
型號(hào):
NTA7002NT1G
倉(cāng)庫(kù)庫(kù)存編號(hào):
70100693
搜索
International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 7.5Milliohms; ID 65A; D-Pak (TO-252AA); PD 75W
規(guī)格:Voltage, Breakdown, Drain to Source 30 V,
型號(hào):
IRLR7821PBF
倉(cāng)庫(kù)庫(kù)存編號(hào):
70017114
搜索
Siliconix / Vishay
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.0026Ohm; ID 17A; SO-8; PD 1.6W; VGS +/-12V; -55
規(guī)格:Voltage, Breakdown, Drain to Source 30 V,
型號(hào):
SI4368DY-T1-E3
倉(cāng)庫(kù)庫(kù)存編號(hào):
70026106
搜索
International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 11 Milliohms; ID 10.8A; SO-8; PD 2.5W; VGS +/-20
規(guī)格:Voltage, Breakdown, Drain to Source 30 V,
型號(hào):
IRF7811AVTRPBF
倉(cāng)庫(kù)庫(kù)存編號(hào):
70017450
搜索
Siliconix / Vishay
DUAL N-CHANNEL 30-V(D-S) MOSFE
規(guī)格:Voltage, Breakdown, Drain to Source 30 V,
型號(hào):
SI4936BDY-T1-E3/BKN
倉(cāng)庫(kù)庫(kù)存編號(hào):
70026362
搜索
Siliconix / Vishay
DUAL N-CH 30V (D-S) RATED MOSFET
規(guī)格:Voltage, Breakdown, Drain to Source 30 V,
型號(hào):
SI5902DC-T1-E3
倉(cāng)庫(kù)庫(kù)存編號(hào):
70026249
搜索
International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 2.3Milliohms; ID 210A; TO-220AB; PD 230W; -55de
規(guī)格:Voltage, Breakdown, Drain to Source 30 V,
型號(hào):
IRF3703PBF
倉(cāng)庫(kù)庫(kù)存編號(hào):
70017482
搜索
Siliconix / Vishay
N-Channel 30-V (D-S) 175 DEG.C MOSFET
規(guī)格:Voltage, Breakdown, Drain to Source 30 V,
型號(hào):
SUD50N03-06P-E3
倉(cāng)庫(kù)庫(kù)存編號(hào):
70026311
搜索
International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.06Ohm; ID 15A; SO-8; PD 2.5W; VGS +/-12V; gFS 4
規(guī)格:Voltage, Breakdown, Drain to Source 30 V,
型號(hào):
IRF7455PBF
倉(cāng)庫(kù)庫(kù)存編號(hào):
70016995
搜索
Siliconix / Vishay
N-Channel 30-V (D-S) 175 DEG.C MOSFET
規(guī)格:Voltage, Breakdown, Drain to Source 30 V,
型號(hào):
SUD50N03-06P-E3/BKN
倉(cāng)庫(kù)庫(kù)存編號(hào):
70026392
搜索
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