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NTP2955G - 

MOSFET, Power; Single P-Ch; VDSS -60V; RDS(ON) 156 Milliohms; ID -12A; TO-220; gFS 6S

ON Semiconductor NTP2955G
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制造商產(chǎn)品編號(hào):
NTP2955G
倉庫庫存編號(hào):
70100705
技術(shù)數(shù)據(jù)表:
View NTP2955G Datasheet Datasheet
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NTP2955G產(chǎn)品概述

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

NTP2955G產(chǎn)品信息

  Brand/Series  NT MOSFET Series  
  Capacitance, Input  507 pF @ -25 V  
  Channel Mode  Enhancement  
  Channel Type  P  
  Configuration  Single  
  Current, Drain  -1.8 A  
  Dimensions  10.28 x 4.82 x 15.75 mm  
  Gate Charge, Total  14 nC  
  Height  0.62" (15.75mm)  
  Length  0.404" (10.28mm)  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  3+Tab  
  Package Type  TO-220  
  Polarization  P-Channel  
  Power Dissipation  62.5 W  
  Resistance, Drain to Source On  196 mΩ  
  Temperature, Operating, Maximum  +175 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +175 °C  
  Time, Turn-Off Delay  27 ns  
  Time, Turn-On Delay  10 ns  
  Transconductance, Forward  6 S  
  Typical Gate Charge @ Vgs  14 nC @ -10 V  
  Voltage, Breakdown, Drain to Source  -60 V  
  Voltage, Drain to Source  -60 V  
  Voltage, Forward, Diode  -1.6 V  
  Voltage, Gate to Source  ±20 V  
  Width  0.19" (4.82mm)  
關(guān)鍵詞         

NTP2955G相關(guān)搜索

Brand/Series NT MOSFET Series  ON Semiconductor Brand/Series NT MOSFET Series  MOSFET Transistors Brand/Series NT MOSFET Series  ON Semiconductor MOSFET Transistors Brand/Series NT MOSFET Series   Capacitance, Input 507 pF @ -25 V  ON Semiconductor Capacitance, Input 507 pF @ -25 V  MOSFET Transistors Capacitance, Input 507 pF @ -25 V  ON Semiconductor MOSFET Transistors Capacitance, Input 507 pF @ -25 V   Channel Mode Enhancement  ON Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  ON Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type P  ON Semiconductor Channel Type P  MOSFET Transistors Channel Type P  ON Semiconductor MOSFET Transistors Channel Type P   Configuration Single  ON Semiconductor Configuration Single  MOSFET Transistors Configuration Single  ON Semiconductor MOSFET Transistors Configuration Single   Current, Drain -1.8 A  ON Semiconductor Current, Drain -1.8 A  MOSFET Transistors Current, Drain -1.8 A  ON Semiconductor MOSFET Transistors Current, Drain -1.8 A   Dimensions 10.28 x 4.82 x 15.75 mm  ON Semiconductor Dimensions 10.28 x 4.82 x 15.75 mm  MOSFET Transistors Dimensions 10.28 x 4.82 x 15.75 mm  ON Semiconductor MOSFET Transistors Dimensions 10.28 x 4.82 x 15.75 mm   Gate Charge, Total 14 nC  ON Semiconductor Gate Charge, Total 14 nC  MOSFET Transistors Gate Charge, Total 14 nC  ON Semiconductor MOSFET Transistors Gate Charge, Total 14 nC   Height 0.62" (15.75mm)  ON Semiconductor Height 0.62" (15.75mm)  MOSFET Transistors Height 0.62" (15.75mm)  ON Semiconductor MOSFET Transistors Height 0.62" (15.75mm)   Length 0.404" (10.28mm)  ON Semiconductor Length 0.404" (10.28mm)  MOSFET Transistors Length 0.404" (10.28mm)  ON Semiconductor MOSFET Transistors Length 0.404" (10.28mm)   Mounting Type Through Hole  ON Semiconductor Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  ON Semiconductor MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  ON Semiconductor MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3+Tab  ON Semiconductor Number of Pins 3+Tab  MOSFET Transistors Number of Pins 3+Tab  ON Semiconductor MOSFET Transistors Number of Pins 3+Tab   Package Type TO-220  ON Semiconductor Package Type TO-220  MOSFET Transistors Package Type TO-220  ON Semiconductor MOSFET Transistors Package Type TO-220   Polarization P-Channel  ON Semiconductor Polarization P-Channel  MOSFET Transistors Polarization P-Channel  ON Semiconductor MOSFET Transistors Polarization P-Channel   Power Dissipation 62.5 W  ON Semiconductor Power Dissipation 62.5 W  MOSFET Transistors Power Dissipation 62.5 W  ON Semiconductor MOSFET Transistors Power Dissipation 62.5 W   Resistance, Drain to Source On 196 mΩ  ON Semiconductor Resistance, Drain to Source On 196 mΩ  MOSFET Transistors Resistance, Drain to Source On 196 mΩ  ON Semiconductor MOSFET Transistors Resistance, Drain to Source On 196 mΩ   Temperature, Operating, Maximum +175 °C  ON Semiconductor Temperature, Operating, Maximum +175 °C  MOSFET Transistors Temperature, Operating, Maximum +175 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Maximum +175 °C   Temperature, Operating, Minimum -55 °C  ON Semiconductor Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +175 °C  ON Semiconductor Temperature, Operating, Range -55 to +175 °C  MOSFET Transistors Temperature, Operating, Range -55 to +175 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Range -55 to +175 °C   Time, Turn-Off Delay 27 ns  ON Semiconductor Time, Turn-Off Delay 27 ns  MOSFET Transistors Time, Turn-Off Delay 27 ns  ON Semiconductor MOSFET Transistors Time, Turn-Off Delay 27 ns   Time, Turn-On Delay 10 ns  ON Semiconductor Time, Turn-On Delay 10 ns  MOSFET Transistors Time, Turn-On Delay 10 ns  ON Semiconductor MOSFET Transistors Time, Turn-On Delay 10 ns   Transconductance, Forward 6 S  ON Semiconductor Transconductance, Forward 6 S  MOSFET Transistors Transconductance, Forward 6 S  ON Semiconductor MOSFET Transistors Transconductance, Forward 6 S   Typical Gate Charge @ Vgs 14 nC @ -10 V  ON Semiconductor Typical Gate Charge @ Vgs 14 nC @ -10 V  MOSFET Transistors Typical Gate Charge @ Vgs 14 nC @ -10 V  ON Semiconductor MOSFET Transistors Typical Gate Charge @ Vgs 14 nC @ -10 V   Voltage, Breakdown, Drain to Source -60 V  ON Semiconductor Voltage, Breakdown, Drain to Source -60 V  MOSFET Transistors Voltage, Breakdown, Drain to Source -60 V  ON Semiconductor MOSFET Transistors Voltage, Breakdown, Drain to Source -60 V   Voltage, Drain to Source -60 V  ON Semiconductor Voltage, Drain to Source -60 V  MOSFET Transistors Voltage, Drain to Source -60 V  ON Semiconductor MOSFET Transistors Voltage, Drain to Source -60 V   Voltage, Forward, Diode -1.6 V  ON Semiconductor Voltage, Forward, Diode -1.6 V  MOSFET Transistors Voltage, Forward, Diode -1.6 V  ON Semiconductor MOSFET Transistors Voltage, Forward, Diode -1.6 V   Voltage, Gate to Source ±20 V  ON Semiconductor Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  ON Semiconductor MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.19" (4.82mm)  ON Semiconductor Width 0.19" (4.82mm)  MOSFET Transistors Width 0.19" (4.82mm)  ON Semiconductor MOSFET Transistors Width 0.19" (4.82mm)  
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