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NTMFS4833NT1G - 

NTMFS4833NT1G N-channel MOSFET Transistor, 191 A, 30 V, 8-Pin SO-8FL

ON Semiconductor NTMFS4833NT1G
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制造商產(chǎn)品編號:
NTMFS4833NT1G
倉庫庫存編號:
70275461
技術(shù)數(shù)據(jù)表:
View NTMFS4833NT1G Datasheet Datasheet
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NTMFS4833NT1G產(chǎn)品信息

  Brand/Series  NT MOSFET Series  
  Capacitance, Input  5600 pF @ 12 V  
  Channel Mode  Enhancement  
  Channel Type  N  
  Configuration  Triple Source  
  Current, Drain  28 A  
  Dimensions  5.1 x 6.1 x 1.05 mm  
  Height  0.041" (1.05mm)  
  Length  0.2" (5.1mm)  
  Mounting Type  Surface Mount  
  Number of Elements per Chip  1  
  Number of Pins  8  
  Package Type  SO-8  
  Power Dissipation  113.6 W  
  Resistance, Drain to Source On  3 mΩ  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Time, Turn-Off Delay  50 ns  
  Time, Turn-On Delay  25 ns  
  Transconductance, Forward  30 sec  
  Typical Gate Charge @ Vgs  39 nC @ 4.5 V  
  Voltage, Drain to Source  30 V  
  Voltage, Forward, Diode  1 V  
  Voltage, Gate to Source  ±20 V  
  Width  0.24" (6.1mm)  
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NTMFS4833NT1G相關(guān)搜索

Brand/Series NT MOSFET Series  ON Semiconductor Brand/Series NT MOSFET Series  MOSFET Transistors Brand/Series NT MOSFET Series  ON Semiconductor MOSFET Transistors Brand/Series NT MOSFET Series   Capacitance, Input 5600 pF @ 12 V  ON Semiconductor Capacitance, Input 5600 pF @ 12 V  MOSFET Transistors Capacitance, Input 5600 pF @ 12 V  ON Semiconductor MOSFET Transistors Capacitance, Input 5600 pF @ 12 V   Channel Mode Enhancement  ON Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  ON Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type N  ON Semiconductor Channel Type N  MOSFET Transistors Channel Type N  ON Semiconductor MOSFET Transistors Channel Type N   Configuration Triple Source  ON Semiconductor Configuration Triple Source  MOSFET Transistors Configuration Triple Source  ON Semiconductor MOSFET Transistors Configuration Triple Source   Current, Drain 28 A  ON Semiconductor Current, Drain 28 A  MOSFET Transistors Current, Drain 28 A  ON Semiconductor MOSFET Transistors Current, Drain 28 A   Dimensions 5.1 x 6.1 x 1.05 mm  ON Semiconductor Dimensions 5.1 x 6.1 x 1.05 mm  MOSFET Transistors Dimensions 5.1 x 6.1 x 1.05 mm  ON Semiconductor MOSFET Transistors Dimensions 5.1 x 6.1 x 1.05 mm   Height 0.041" (1.05mm)  ON Semiconductor Height 0.041" (1.05mm)  MOSFET Transistors Height 0.041" (1.05mm)  ON Semiconductor MOSFET Transistors Height 0.041" (1.05mm)   Length 0.2" (5.1mm)  ON Semiconductor Length 0.2" (5.1mm)  MOSFET Transistors Length 0.2" (5.1mm)  ON Semiconductor MOSFET Transistors Length 0.2" (5.1mm)   Mounting Type Surface Mount  ON Semiconductor Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  ON Semiconductor MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  ON Semiconductor MOSFET Transistors Number of Elements per Chip 1   Number of Pins 8  ON Semiconductor Number of Pins 8  MOSFET Transistors Number of Pins 8  ON Semiconductor MOSFET Transistors Number of Pins 8   Package Type SO-8  ON Semiconductor Package Type SO-8  MOSFET Transistors Package Type SO-8  ON Semiconductor MOSFET Transistors Package Type SO-8   Power Dissipation 113.6 W  ON Semiconductor Power Dissipation 113.6 W  MOSFET Transistors Power Dissipation 113.6 W  ON Semiconductor MOSFET Transistors Power Dissipation 113.6 W   Resistance, Drain to Source On 3 mΩ  ON Semiconductor Resistance, Drain to Source On 3 mΩ  MOSFET Transistors Resistance, Drain to Source On 3 mΩ  ON Semiconductor MOSFET Transistors Resistance, Drain to Source On 3 mΩ   Temperature, Operating, Maximum +150 °C  ON Semiconductor Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  ON Semiconductor Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 50 ns  ON Semiconductor Time, Turn-Off Delay 50 ns  MOSFET Transistors Time, Turn-Off Delay 50 ns  ON Semiconductor MOSFET Transistors Time, Turn-Off Delay 50 ns   Time, Turn-On Delay 25 ns  ON Semiconductor Time, Turn-On Delay 25 ns  MOSFET Transistors Time, Turn-On Delay 25 ns  ON Semiconductor MOSFET Transistors Time, Turn-On Delay 25 ns   Transconductance, Forward 30 sec  ON Semiconductor Transconductance, Forward 30 sec  MOSFET Transistors Transconductance, Forward 30 sec  ON Semiconductor MOSFET Transistors Transconductance, Forward 30 sec   Typical Gate Charge @ Vgs 39 nC @ 4.5 V  ON Semiconductor Typical Gate Charge @ Vgs 39 nC @ 4.5 V  MOSFET Transistors Typical Gate Charge @ Vgs 39 nC @ 4.5 V  ON Semiconductor MOSFET Transistors Typical Gate Charge @ Vgs 39 nC @ 4.5 V   Voltage, Drain to Source 30 V  ON Semiconductor Voltage, Drain to Source 30 V  MOSFET Transistors Voltage, Drain to Source 30 V  ON Semiconductor MOSFET Transistors Voltage, Drain to Source 30 V   Voltage, Forward, Diode 1 V  ON Semiconductor Voltage, Forward, Diode 1 V  MOSFET Transistors Voltage, Forward, Diode 1 V  ON Semiconductor MOSFET Transistors Voltage, Forward, Diode 1 V   Voltage, Gate to Source ±20 V  ON Semiconductor Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  ON Semiconductor MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.24" (6.1mm)  ON Semiconductor Width 0.24" (6.1mm)  MOSFET Transistors Width 0.24" (6.1mm)  ON Semiconductor MOSFET Transistors Width 0.24" (6.1mm)  
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