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NTJD4001NT1G - 

MOSFET; Dual N-Ch; VDSS 30V; RDS(ON) 1Ohm; ID 250mA; SOT-363; PD 272mW; VGS +/-20V; -55d

ON Semiconductor NTJD4001NT1G
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制造商產(chǎn)品編號:
NTJD4001NT1G
倉庫庫存編號:
70100701
技術(shù)數(shù)據(jù)表:
View NTJD4001NT1G Datasheet Datasheet
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NTJD4001NT1G產(chǎn)品信息

  Brand/Series  NT MOSFET Series  
  Capacitance, Input  20 pF @ 5 V  
  Channel Mode  Enhancement  
  Channel Type  N  
  Configuration  Single  
  Current, Drain  250 mA  
  Dimensions  2.2 x 1.35 x 1 mm  
  Gate Charge, Total  0.9 nC  
  Height  0.039" (1mm)  
  Length  0.086" (2.2mm)  
  Mounting Type  Surface Mount  
  Number of Elements per Chip  2  
  Number of Pins  6  
  Package Type  SOT-363  
  Polarization  Dual N-Channel  
  Power Dissipation  272 mW  
  Resistance, Drain to Source On  2.5 Ω  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Time, Turn-Off Delay  94 ns  
  Time, Turn-On Delay  17 ns  
  Transconductance, Forward  80 S  
  Typical Gate Charge @ Vgs  0.9 nC @ 5 V  
  Voltage, Breakdown, Drain to Source  30 V  
  Voltage, Drain to Source  30 V  
  Voltage, Forward, Diode  0.65 V  
  Voltage, Gate to Source  ±20 V  
  Width  0.053" (1.35mm)  
關(guān)鍵詞         

NTJD4001NT1G相關(guān)搜索

Brand/Series NT MOSFET Series  ON Semiconductor Brand/Series NT MOSFET Series  MOSFET Transistors Brand/Series NT MOSFET Series  ON Semiconductor MOSFET Transistors Brand/Series NT MOSFET Series   Capacitance, Input 20 pF @ 5 V  ON Semiconductor Capacitance, Input 20 pF @ 5 V  MOSFET Transistors Capacitance, Input 20 pF @ 5 V  ON Semiconductor MOSFET Transistors Capacitance, Input 20 pF @ 5 V   Channel Mode Enhancement  ON Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  ON Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type N  ON Semiconductor Channel Type N  MOSFET Transistors Channel Type N  ON Semiconductor MOSFET Transistors Channel Type N   Configuration Single  ON Semiconductor Configuration Single  MOSFET Transistors Configuration Single  ON Semiconductor MOSFET Transistors Configuration Single   Current, Drain 250 mA  ON Semiconductor Current, Drain 250 mA  MOSFET Transistors Current, Drain 250 mA  ON Semiconductor MOSFET Transistors Current, Drain 250 mA   Dimensions 2.2 x 1.35 x 1 mm  ON Semiconductor Dimensions 2.2 x 1.35 x 1 mm  MOSFET Transistors Dimensions 2.2 x 1.35 x 1 mm  ON Semiconductor MOSFET Transistors Dimensions 2.2 x 1.35 x 1 mm   Gate Charge, Total 0.9 nC  ON Semiconductor Gate Charge, Total 0.9 nC  MOSFET Transistors Gate Charge, Total 0.9 nC  ON Semiconductor MOSFET Transistors Gate Charge, Total 0.9 nC   Height 0.039" (1mm)  ON Semiconductor Height 0.039" (1mm)  MOSFET Transistors Height 0.039" (1mm)  ON Semiconductor MOSFET Transistors Height 0.039" (1mm)   Length 0.086" (2.2mm)  ON Semiconductor Length 0.086" (2.2mm)  MOSFET Transistors Length 0.086" (2.2mm)  ON Semiconductor MOSFET Transistors Length 0.086" (2.2mm)   Mounting Type Surface Mount  ON Semiconductor Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  ON Semiconductor MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 2  ON Semiconductor Number of Elements per Chip 2  MOSFET Transistors Number of Elements per Chip 2  ON Semiconductor MOSFET Transistors Number of Elements per Chip 2   Number of Pins 6  ON Semiconductor Number of Pins 6  MOSFET Transistors Number of Pins 6  ON Semiconductor MOSFET Transistors Number of Pins 6   Package Type SOT-363  ON Semiconductor Package Type SOT-363  MOSFET Transistors Package Type SOT-363  ON Semiconductor MOSFET Transistors Package Type SOT-363   Polarization Dual N-Channel  ON Semiconductor Polarization Dual N-Channel  MOSFET Transistors Polarization Dual N-Channel  ON Semiconductor MOSFET Transistors Polarization Dual N-Channel   Power Dissipation 272 mW  ON Semiconductor Power Dissipation 272 mW  MOSFET Transistors Power Dissipation 272 mW  ON Semiconductor MOSFET Transistors Power Dissipation 272 mW   Resistance, Drain to Source On 2.5 Ω  ON Semiconductor Resistance, Drain to Source On 2.5 Ω  MOSFET Transistors Resistance, Drain to Source On 2.5 Ω  ON Semiconductor MOSFET Transistors Resistance, Drain to Source On 2.5 Ω   Temperature, Operating, Maximum +150 °C  ON Semiconductor Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  ON Semiconductor Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 94 ns  ON Semiconductor Time, Turn-Off Delay 94 ns  MOSFET Transistors Time, Turn-Off Delay 94 ns  ON Semiconductor MOSFET Transistors Time, Turn-Off Delay 94 ns   Time, Turn-On Delay 17 ns  ON Semiconductor Time, Turn-On Delay 17 ns  MOSFET Transistors Time, Turn-On Delay 17 ns  ON Semiconductor MOSFET Transistors Time, Turn-On Delay 17 ns   Transconductance, Forward 80 S  ON Semiconductor Transconductance, Forward 80 S  MOSFET Transistors Transconductance, Forward 80 S  ON Semiconductor MOSFET Transistors Transconductance, Forward 80 S   Typical Gate Charge @ Vgs 0.9 nC @ 5 V  ON Semiconductor Typical Gate Charge @ Vgs 0.9 nC @ 5 V  MOSFET Transistors Typical Gate Charge @ Vgs 0.9 nC @ 5 V  ON Semiconductor MOSFET Transistors Typical Gate Charge @ Vgs 0.9 nC @ 5 V   Voltage, Breakdown, Drain to Source 30 V  ON Semiconductor Voltage, Breakdown, Drain to Source 30 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 30 V  ON Semiconductor MOSFET Transistors Voltage, Breakdown, Drain to Source 30 V   Voltage, Drain to Source 30 V  ON Semiconductor Voltage, Drain to Source 30 V  MOSFET Transistors Voltage, Drain to Source 30 V  ON Semiconductor MOSFET Transistors Voltage, Drain to Source 30 V   Voltage, Forward, Diode 0.65 V  ON Semiconductor Voltage, Forward, Diode 0.65 V  MOSFET Transistors Voltage, Forward, Diode 0.65 V  ON Semiconductor MOSFET Transistors Voltage, Forward, Diode 0.65 V   Voltage, Gate to Source ±20 V  ON Semiconductor Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  ON Semiconductor MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.053" (1.35mm)  ON Semiconductor Width 0.053" (1.35mm)  MOSFET Transistors Width 0.053" (1.35mm)  ON Semiconductor MOSFET Transistors Width 0.053" (1.35mm)  
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