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NTGS3455T1G - 

MOSFET; P-Ch; VDSS -30VDC; RDS(ON) 0.094Ohm; ID -3.5A; TSOP-6; PD 0.5W; VGS +/-20V; Qg 9

ON Semiconductor NTGS3455T1G
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制造商產(chǎn)品編號:
NTGS3455T1G
倉庫庫存編號:
70100700
技術(shù)數(shù)據(jù)表:
View NTGS3455T1G Datasheet Datasheet
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NTGS3455T1G產(chǎn)品信息

  Brand/Series  NT MOSFET Series  
  Capacitance, Input  480 pF @ -5 V  
  Channel Mode  Enhancement  
  Channel Type  P  
  Configuration  Quad Drain  
  Current, Drain  -1.75 A  
  Dimensions  3.1 x 1.7 x 1 mm  
  Gate Charge, Total  9 nC  
  Height  0.039" (1mm)  
  Length  0.122" (3.1mm)  
  Mounting Type  Surface Mount  
  Number of Elements per Chip  1  
  Number of Pins  6  
  Package Type  TSOP  
  Polarization  P-Channel  
  Power Dissipation  2 W  
  Resistance, Drain to Source On  0.17 Ω  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Time, Turn-Off Delay  20 ns  
  Time, Turn-On Delay  10 ns  
  Transconductance, Forward  6 S  
  Typical Gate Charge @ Vgs  9 nC @ -10 V  
  Voltage, Breakdown, Drain to Source  -30 V  
  Voltage, Drain to Source  -30 V  
  Voltage, Forward, Diode  -0.9 V  
  Voltage, Gate to Source  ±20 V  
  Width  0.067" (1.7mm)  
關(guān)鍵詞         

NTGS3455T1G相關(guān)搜索

Brand/Series NT MOSFET Series  ON Semiconductor Brand/Series NT MOSFET Series  MOSFET Transistors Brand/Series NT MOSFET Series  ON Semiconductor MOSFET Transistors Brand/Series NT MOSFET Series   Capacitance, Input 480 pF @ -5 V  ON Semiconductor Capacitance, Input 480 pF @ -5 V  MOSFET Transistors Capacitance, Input 480 pF @ -5 V  ON Semiconductor MOSFET Transistors Capacitance, Input 480 pF @ -5 V   Channel Mode Enhancement  ON Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  ON Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type P  ON Semiconductor Channel Type P  MOSFET Transistors Channel Type P  ON Semiconductor MOSFET Transistors Channel Type P   Configuration Quad Drain  ON Semiconductor Configuration Quad Drain  MOSFET Transistors Configuration Quad Drain  ON Semiconductor MOSFET Transistors Configuration Quad Drain   Current, Drain -1.75 A  ON Semiconductor Current, Drain -1.75 A  MOSFET Transistors Current, Drain -1.75 A  ON Semiconductor MOSFET Transistors Current, Drain -1.75 A   Dimensions 3.1 x 1.7 x 1 mm  ON Semiconductor Dimensions 3.1 x 1.7 x 1 mm  MOSFET Transistors Dimensions 3.1 x 1.7 x 1 mm  ON Semiconductor MOSFET Transistors Dimensions 3.1 x 1.7 x 1 mm   Gate Charge, Total 9 nC  ON Semiconductor Gate Charge, Total 9 nC  MOSFET Transistors Gate Charge, Total 9 nC  ON Semiconductor MOSFET Transistors Gate Charge, Total 9 nC   Height 0.039" (1mm)  ON Semiconductor Height 0.039" (1mm)  MOSFET Transistors Height 0.039" (1mm)  ON Semiconductor MOSFET Transistors Height 0.039" (1mm)   Length 0.122" (3.1mm)  ON Semiconductor Length 0.122" (3.1mm)  MOSFET Transistors Length 0.122" (3.1mm)  ON Semiconductor MOSFET Transistors Length 0.122" (3.1mm)   Mounting Type Surface Mount  ON Semiconductor Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  ON Semiconductor MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  ON Semiconductor MOSFET Transistors Number of Elements per Chip 1   Number of Pins 6  ON Semiconductor Number of Pins 6  MOSFET Transistors Number of Pins 6  ON Semiconductor MOSFET Transistors Number of Pins 6   Package Type TSOP  ON Semiconductor Package Type TSOP  MOSFET Transistors Package Type TSOP  ON Semiconductor MOSFET Transistors Package Type TSOP   Polarization P-Channel  ON Semiconductor Polarization P-Channel  MOSFET Transistors Polarization P-Channel  ON Semiconductor MOSFET Transistors Polarization P-Channel   Power Dissipation 2 W  ON Semiconductor Power Dissipation 2 W  MOSFET Transistors Power Dissipation 2 W  ON Semiconductor MOSFET Transistors Power Dissipation 2 W   Resistance, Drain to Source On 0.17 Ω  ON Semiconductor Resistance, Drain to Source On 0.17 Ω  MOSFET Transistors Resistance, Drain to Source On 0.17 Ω  ON Semiconductor MOSFET Transistors Resistance, Drain to Source On 0.17 Ω   Temperature, Operating, Maximum +150 °C  ON Semiconductor Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  ON Semiconductor Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 20 ns  ON Semiconductor Time, Turn-Off Delay 20 ns  MOSFET Transistors Time, Turn-Off Delay 20 ns  ON Semiconductor MOSFET Transistors Time, Turn-Off Delay 20 ns   Time, Turn-On Delay 10 ns  ON Semiconductor Time, Turn-On Delay 10 ns  MOSFET Transistors Time, Turn-On Delay 10 ns  ON Semiconductor MOSFET Transistors Time, Turn-On Delay 10 ns   Transconductance, Forward 6 S  ON Semiconductor Transconductance, Forward 6 S  MOSFET Transistors Transconductance, Forward 6 S  ON Semiconductor MOSFET Transistors Transconductance, Forward 6 S   Typical Gate Charge @ Vgs 9 nC @ -10 V  ON Semiconductor Typical Gate Charge @ Vgs 9 nC @ -10 V  MOSFET Transistors Typical Gate Charge @ Vgs 9 nC @ -10 V  ON Semiconductor MOSFET Transistors Typical Gate Charge @ Vgs 9 nC @ -10 V   Voltage, Breakdown, Drain to Source -30 V  ON Semiconductor Voltage, Breakdown, Drain to Source -30 V  MOSFET Transistors Voltage, Breakdown, Drain to Source -30 V  ON Semiconductor MOSFET Transistors Voltage, Breakdown, Drain to Source -30 V   Voltage, Drain to Source -30 V  ON Semiconductor Voltage, Drain to Source -30 V  MOSFET Transistors Voltage, Drain to Source -30 V  ON Semiconductor MOSFET Transistors Voltage, Drain to Source -30 V   Voltage, Forward, Diode -0.9 V  ON Semiconductor Voltage, Forward, Diode -0.9 V  MOSFET Transistors Voltage, Forward, Diode -0.9 V  ON Semiconductor MOSFET Transistors Voltage, Forward, Diode -0.9 V   Voltage, Gate to Source ±20 V  ON Semiconductor Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  ON Semiconductor MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.067" (1.7mm)  ON Semiconductor Width 0.067" (1.7mm)  MOSFET Transistors Width 0.067" (1.7mm)  ON Semiconductor MOSFET Transistors Width 0.067" (1.7mm)  
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