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NTA4151PT1G - 

MOSFET; Single P-Ch; VDSS -20V; RDS(ON) 0.26Ohm; ID -760mA; SC-75/SOT-416; PD 301mW

ON Semiconductor NTA4151PT1G
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制造商產(chǎn)品編號(hào):
NTA4151PT1G
倉(cāng)庫庫存編號(hào):
70100691
技術(shù)數(shù)據(jù)表:
View NTA4151PT1G Datasheet Datasheet
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NTA4151PT1G產(chǎn)品信息

  Brand/Series  NT MOSFET Series  
  Capacitance, Input  156 pF @ -5 V  
  Channel Mode  Enhancement  
  Channel Type  P  
  Configuration  Single  
  Current, Drain  -760 mA  
  Dimensions  1.65 x 0.9 x 0.8 mm  
  Gate Charge, Total  2.1 nC  
  Height  0.031" (0.8mm)  
  Length  0.064" (1.65mm)  
  Mounting Type  Surface Mount  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  SC-75  
  Polarization  P-Channel  
  Power Dissipation  301 mW  
  Resistance, Drain to Source On  0.26 Ω  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Time, Turn-Off Delay  29 ns  
  Time, Turn-On Delay  8 ns  
  Transconductance, Forward  0.4 S  
  Typical Gate Charge @ Vgs  2.1 nC @ -4.5 V  
  Voltage, Breakdown, Drain to Source  -20 V  
  Voltage, Drain to Source  -20 V  
  Voltage, Forward, Diode  -0.72 V  
  Voltage, Gate to Source  ±6 V  
  Width  0.035" (0.9mm)  
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NTA4151PT1G相關(guān)搜索

Brand/Series NT MOSFET Series  ON Semiconductor Brand/Series NT MOSFET Series  MOSFET Transistors Brand/Series NT MOSFET Series  ON Semiconductor MOSFET Transistors Brand/Series NT MOSFET Series   Capacitance, Input 156 pF @ -5 V  ON Semiconductor Capacitance, Input 156 pF @ -5 V  MOSFET Transistors Capacitance, Input 156 pF @ -5 V  ON Semiconductor MOSFET Transistors Capacitance, Input 156 pF @ -5 V   Channel Mode Enhancement  ON Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  ON Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type P  ON Semiconductor Channel Type P  MOSFET Transistors Channel Type P  ON Semiconductor MOSFET Transistors Channel Type P   Configuration Single  ON Semiconductor Configuration Single  MOSFET Transistors Configuration Single  ON Semiconductor MOSFET Transistors Configuration Single   Current, Drain -760 mA  ON Semiconductor Current, Drain -760 mA  MOSFET Transistors Current, Drain -760 mA  ON Semiconductor MOSFET Transistors Current, Drain -760 mA   Dimensions 1.65 x 0.9 x 0.8 mm  ON Semiconductor Dimensions 1.65 x 0.9 x 0.8 mm  MOSFET Transistors Dimensions 1.65 x 0.9 x 0.8 mm  ON Semiconductor MOSFET Transistors Dimensions 1.65 x 0.9 x 0.8 mm   Gate Charge, Total 2.1 nC  ON Semiconductor Gate Charge, Total 2.1 nC  MOSFET Transistors Gate Charge, Total 2.1 nC  ON Semiconductor MOSFET Transistors Gate Charge, Total 2.1 nC   Height 0.031" (0.8mm)  ON Semiconductor Height 0.031" (0.8mm)  MOSFET Transistors Height 0.031" (0.8mm)  ON Semiconductor MOSFET Transistors Height 0.031" (0.8mm)   Length 0.064" (1.65mm)  ON Semiconductor Length 0.064" (1.65mm)  MOSFET Transistors Length 0.064" (1.65mm)  ON Semiconductor MOSFET Transistors Length 0.064" (1.65mm)   Mounting Type Surface Mount  ON Semiconductor Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  ON Semiconductor MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  ON Semiconductor MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  ON Semiconductor Number of Pins 3  MOSFET Transistors Number of Pins 3  ON Semiconductor MOSFET Transistors Number of Pins 3   Package Type SC-75  ON Semiconductor Package Type SC-75  MOSFET Transistors Package Type SC-75  ON Semiconductor MOSFET Transistors Package Type SC-75   Polarization P-Channel  ON Semiconductor Polarization P-Channel  MOSFET Transistors Polarization P-Channel  ON Semiconductor MOSFET Transistors Polarization P-Channel   Power Dissipation 301 mW  ON Semiconductor Power Dissipation 301 mW  MOSFET Transistors Power Dissipation 301 mW  ON Semiconductor MOSFET Transistors Power Dissipation 301 mW   Resistance, Drain to Source On 0.26 Ω  ON Semiconductor Resistance, Drain to Source On 0.26 Ω  MOSFET Transistors Resistance, Drain to Source On 0.26 Ω  ON Semiconductor MOSFET Transistors Resistance, Drain to Source On 0.26 Ω   Temperature, Operating, Maximum +150 °C  ON Semiconductor Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  ON Semiconductor Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 29 ns  ON Semiconductor Time, Turn-Off Delay 29 ns  MOSFET Transistors Time, Turn-Off Delay 29 ns  ON Semiconductor MOSFET Transistors Time, Turn-Off Delay 29 ns   Time, Turn-On Delay 8 ns  ON Semiconductor Time, Turn-On Delay 8 ns  MOSFET Transistors Time, Turn-On Delay 8 ns  ON Semiconductor MOSFET Transistors Time, Turn-On Delay 8 ns   Transconductance, Forward 0.4 S  ON Semiconductor Transconductance, Forward 0.4 S  MOSFET Transistors Transconductance, Forward 0.4 S  ON Semiconductor MOSFET Transistors Transconductance, Forward 0.4 S   Typical Gate Charge @ Vgs 2.1 nC @ -4.5 V  ON Semiconductor Typical Gate Charge @ Vgs 2.1 nC @ -4.5 V  MOSFET Transistors Typical Gate Charge @ Vgs 2.1 nC @ -4.5 V  ON Semiconductor MOSFET Transistors Typical Gate Charge @ Vgs 2.1 nC @ -4.5 V   Voltage, Breakdown, Drain to Source -20 V  ON Semiconductor Voltage, Breakdown, Drain to Source -20 V  MOSFET Transistors Voltage, Breakdown, Drain to Source -20 V  ON Semiconductor MOSFET Transistors Voltage, Breakdown, Drain to Source -20 V   Voltage, Drain to Source -20 V  ON Semiconductor Voltage, Drain to Source -20 V  MOSFET Transistors Voltage, Drain to Source -20 V  ON Semiconductor MOSFET Transistors Voltage, Drain to Source -20 V   Voltage, Forward, Diode -0.72 V  ON Semiconductor Voltage, Forward, Diode -0.72 V  MOSFET Transistors Voltage, Forward, Diode -0.72 V  ON Semiconductor MOSFET Transistors Voltage, Forward, Diode -0.72 V   Voltage, Gate to Source ±6 V  ON Semiconductor Voltage, Gate to Source ±6 V  MOSFET Transistors Voltage, Gate to Source ±6 V  ON Semiconductor MOSFET Transistors Voltage, Gate to Source ±6 V   Width 0.035" (0.9mm)  ON Semiconductor Width 0.035" (0.9mm)  MOSFET Transistors Width 0.035" (0.9mm)  ON Semiconductor MOSFET Transistors Width 0.035" (0.9mm)  
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