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MMFT960T1G - 

MOSFET, Power; N-Ch; VDSS 60VDC; RDS(ON) 1.7 Ohms; ID 300mA; SOT-223 (TO-261); PD 0.8W

ON Semiconductor MMFT960T1G
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制造商產(chǎn)品編號(hào):
MMFT960T1G
倉(cāng)庫(kù)庫(kù)存編號(hào):
70100030
技術(shù)數(shù)據(jù)表:
View MMFT960T1G Datasheet Datasheet
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MMFT960T1G產(chǎn)品信息

  Brand/Series  Power MOSFET Series  
  Capacitance, Input  65 pF @ 25 V  
  Channel Mode  Enhancement  
  Channel Type  N  
  Configuration  Single  
  Current, Drain  300 mA  
  Dimensions  6.7 x 3.7 x 1.65 mm  
  Gate Charge, Total  3.2 nC  
  Height  0.065" (1.65mm)  
  Length  0.263" (6.7mm)  
  Mounting Type  Surface Mount  
  Number of Elements per Chip  1  
  Number of Pins  3+Tab  
  Package Type  SOT-223  
  Polarization  N-Channel  
  Power Dissipation  0.8 W  
  Resistance, Drain to Source On  1.7 Ω  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -65 °C  
  Temperature, Operating, Range  -65 to +150 °C  
  Transconductance, Forward  600 mS  
  Typical Gate Charge @ Vgs  3.2 nC @ 10 V  
  Voltage, Breakdown, Drain to Source  60 V  
  Voltage, Drain to Source  60 V  
  Voltage, Gate to Source  ±30 V  
  Width  0.146" (3.7mm)  
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MMFT960T1G相關(guān)搜索

Brand/Series Power MOSFET Series  ON Semiconductor Brand/Series Power MOSFET Series  MOSFET Transistors Brand/Series Power MOSFET Series  ON Semiconductor MOSFET Transistors Brand/Series Power MOSFET Series   Capacitance, Input 65 pF @ 25 V  ON Semiconductor Capacitance, Input 65 pF @ 25 V  MOSFET Transistors Capacitance, Input 65 pF @ 25 V  ON Semiconductor MOSFET Transistors Capacitance, Input 65 pF @ 25 V   Channel Mode Enhancement  ON Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  ON Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type N  ON Semiconductor Channel Type N  MOSFET Transistors Channel Type N  ON Semiconductor MOSFET Transistors Channel Type N   Configuration Single  ON Semiconductor Configuration Single  MOSFET Transistors Configuration Single  ON Semiconductor MOSFET Transistors Configuration Single   Current, Drain 300 mA  ON Semiconductor Current, Drain 300 mA  MOSFET Transistors Current, Drain 300 mA  ON Semiconductor MOSFET Transistors Current, Drain 300 mA   Dimensions 6.7 x 3.7 x 1.65 mm  ON Semiconductor Dimensions 6.7 x 3.7 x 1.65 mm  MOSFET Transistors Dimensions 6.7 x 3.7 x 1.65 mm  ON Semiconductor MOSFET Transistors Dimensions 6.7 x 3.7 x 1.65 mm   Gate Charge, Total 3.2 nC  ON Semiconductor Gate Charge, Total 3.2 nC  MOSFET Transistors Gate Charge, Total 3.2 nC  ON Semiconductor MOSFET Transistors Gate Charge, Total 3.2 nC   Height 0.065" (1.65mm)  ON Semiconductor Height 0.065" (1.65mm)  MOSFET Transistors Height 0.065" (1.65mm)  ON Semiconductor MOSFET Transistors Height 0.065" (1.65mm)   Length 0.263" (6.7mm)  ON Semiconductor Length 0.263" (6.7mm)  MOSFET Transistors Length 0.263" (6.7mm)  ON Semiconductor MOSFET Transistors Length 0.263" (6.7mm)   Mounting Type Surface Mount  ON Semiconductor Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  ON Semiconductor MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  ON Semiconductor MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3+Tab  ON Semiconductor Number of Pins 3+Tab  MOSFET Transistors Number of Pins 3+Tab  ON Semiconductor MOSFET Transistors Number of Pins 3+Tab   Package Type SOT-223  ON Semiconductor Package Type SOT-223  MOSFET Transistors Package Type SOT-223  ON Semiconductor MOSFET Transistors Package Type SOT-223   Polarization N-Channel  ON Semiconductor Polarization N-Channel  MOSFET Transistors Polarization N-Channel  ON Semiconductor MOSFET Transistors Polarization N-Channel   Power Dissipation 0.8 W  ON Semiconductor Power Dissipation 0.8 W  MOSFET Transistors Power Dissipation 0.8 W  ON Semiconductor MOSFET Transistors Power Dissipation 0.8 W   Resistance, Drain to Source On 1.7 Ω  ON Semiconductor Resistance, Drain to Source On 1.7 Ω  MOSFET Transistors Resistance, Drain to Source On 1.7 Ω  ON Semiconductor MOSFET Transistors Resistance, Drain to Source On 1.7 Ω   Temperature, Operating, Maximum +150 °C  ON Semiconductor Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -65 °C  ON Semiconductor Temperature, Operating, Minimum -65 °C  MOSFET Transistors Temperature, Operating, Minimum -65 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Minimum -65 °C   Temperature, Operating, Range -65 to +150 °C  ON Semiconductor Temperature, Operating, Range -65 to +150 °C  MOSFET Transistors Temperature, Operating, Range -65 to +150 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Range -65 to +150 °C   Transconductance, Forward 600 mS  ON Semiconductor Transconductance, Forward 600 mS  MOSFET Transistors Transconductance, Forward 600 mS  ON Semiconductor MOSFET Transistors Transconductance, Forward 600 mS   Typical Gate Charge @ Vgs 3.2 nC @ 10 V  ON Semiconductor Typical Gate Charge @ Vgs 3.2 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs 3.2 nC @ 10 V  ON Semiconductor MOSFET Transistors Typical Gate Charge @ Vgs 3.2 nC @ 10 V   Voltage, Breakdown, Drain to Source 60 V  ON Semiconductor Voltage, Breakdown, Drain to Source 60 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 60 V  ON Semiconductor MOSFET Transistors Voltage, Breakdown, Drain to Source 60 V   Voltage, Drain to Source 60 V  ON Semiconductor Voltage, Drain to Source 60 V  MOSFET Transistors Voltage, Drain to Source 60 V  ON Semiconductor MOSFET Transistors Voltage, Drain to Source 60 V   Voltage, Gate to Source ±30 V  ON Semiconductor Voltage, Gate to Source ±30 V  MOSFET Transistors Voltage, Gate to Source ±30 V  ON Semiconductor MOSFET Transistors Voltage, Gate to Source ±30 V   Width 0.146" (3.7mm)  ON Semiconductor Width 0.146" (3.7mm)  MOSFET Transistors Width 0.146" (3.7mm)  ON Semiconductor MOSFET Transistors Width 0.146" (3.7mm)  
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