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MMBT3906LT1G
MMBT3906LT1G -
TRANSISTOR, SILICON; PNP; -40VDC VCE; -40VDC VCB; -5VDC VEB; -200MADC ICC
聲明：圖片僅供參考，請以實(shí)物為準(zhǔn)！
制造商：
ON Semiconductor
ON Semiconductor
制造商產(chǎn)品編號：
MMBT3906LT1G
倉庫庫存編號：
70099532
技術(shù)數(shù)據(jù)表：
Datasheet
訂購熱線：
400-900-3095 0755-21000796, QQ:
800152669
, Email:
sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫龐大，部分產(chǎn)品信息可能未能及時(shí)更新，下單前請與銷售人員確認(rèn)好實(shí)時(shí)在庫數(shù)量，謝謝合作！
MMBT3906LT1G產(chǎn)品概述
Small Signal PNP Transistors, ON Semiconductor
These ON Semiconductor Bipolar transistors can amplify analog or digital signals. They can also switch DC or function as an oscillator.
MMBT3906LT1G產(chǎn)品信息
Brand/Series
Transistor Series
Configuration
Common Base
Current, Collector
-200 mA
Current, Gain
30
Dimensions
3.04 x 1.40 x 1.01 mm
Height
0.04" (1.01mm)
Length
0.119" (3.04mm)
Material
Si
Mounting Type
Surface Mount
Number of Elements per Chip
1
Number of Pins
3
Package Type
SOT-23
Power Dissipation
225 mW
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Temperature, Operating, Range
-55 to +150 °C
Transistor Type
PNP
Voltage, Collector to Base
-40 V
Voltage, Collector to Emitter
-40 V
Voltage, Collector to Emitter, Saturation
-0.25 V
Voltage, Emitter to Base
-5 V
Voltage, Saturation, Base to Emitter
-0.95 V
Width
0.055" (1.4mm)
關(guān)鍵詞
MMBT3906LT1G客戶還搜索了
參考圖片
制造商 / 說明 / 型號 / 倉庫庫存編號
PDF
操作
AVX
Capacitor; Ceramic; Cap 0.1 uF; Tol 10%; Vol-Rtg 50 VDC; SMT; 1206; X7R; Cut Tape
型號：
12065C104KAT2A
倉庫庫存編號：
70002468
搜索
ON Semiconductor
TRANSISTOR; SOT-23; NPN; 40 VDC (MAX.); 60 VDC (MAX.); 6.0 VDC (MAX.)
型號：
MMBT3904LT1G
倉庫庫存編號：
70099530
搜索
Omron Electronic Components
Relay; E-Mech; Low Signal; DPDT; Cur-Rtg 0.3/1AAC/ADC; Ctrl-V 12DC; SMD Mnt; SMT; 8 Pin
型號：
G6K2FYDC12BYOMR
倉庫庫存編號：
70175668
搜索
Keystone Electronics
Test Point; Compact; SMT; Phos Bronze/Silver; 1000pc Tape & Reel
型號：
5016
倉庫庫存編號：
70181603
搜索
General Semiconductor / Vishay
SMCJ5.0CA-E3/57T, Bi-Directional TVS Diode, 1500W, 2-Pin SMC
型號：
SMCJ5.0CA-E3/57T
倉庫庫存編號：
70217316
搜索
Panasonic
Resistor; Thick Film; Res 1 Kilohms; Pwr-Rtg 0.25 W; Tol 1%; SMT; 1206; Cut Tape
型號：
ERJ-8ENF1001V
倉庫庫存編號：
70266167
搜索
Panasonic
Resistor; Thick Film; Res 10 Kilohms; Pwr-Rtg 0.25 W; Tol 1%; SMT; 1206; Cut Tape
型號：
ERJ-8ENF1002V
倉庫庫存編號：
70266168
搜索
Panasonic
Resistor; Thick Film; Res 49.9 Ohms; Pwr-Rtg 0.25 W; Tol 1%; SMT; 1206; Cut Tape
型號：
ERJ-8ENF49R9V
倉庫庫存編號：
70266195
搜索
Diodes Inc
Diode Schottky 1A 40V SOD123
型號：
1N5819HW-7-F
倉庫庫存編號：
70437201
搜索
MMBT3906LT1G相關(guān)搜索
Brand/Series Transistor Series
ON Semiconductor Brand/Series Transistor Series
Bipolar Transistors Brand/Series Transistor Series
ON Semiconductor Bipolar Transistors Brand/Series Transistor Series
Configuration Common Base
ON Semiconductor Configuration Common Base
Bipolar Transistors Configuration Common Base
ON Semiconductor Bipolar Transistors Configuration Common Base
Current, Collector -200 mA
ON Semiconductor Current, Collector -200 mA
Bipolar Transistors Current, Collector -200 mA
ON Semiconductor Bipolar Transistors Current, Collector -200 mA
Current, Gain 30
ON Semiconductor Current, Gain 30
Bipolar Transistors Current, Gain 30
ON Semiconductor Bipolar Transistors Current, Gain 30
Dimensions 3.04 x 1.40 x 1.01 mm
ON Semiconductor Dimensions 3.04 x 1.40 x 1.01 mm
Bipolar Transistors Dimensions 3.04 x 1.40 x 1.01 mm
ON Semiconductor Bipolar Transistors Dimensions 3.04 x 1.40 x 1.01 mm
Height 0.04" (1.01mm)
ON Semiconductor Height 0.04" (1.01mm)
Bipolar Transistors Height 0.04" (1.01mm)
ON Semiconductor Bipolar Transistors Height 0.04" (1.01mm)
Length 0.119" (3.04mm)
ON Semiconductor Length 0.119" (3.04mm)
Bipolar Transistors Length 0.119" (3.04mm)
ON Semiconductor Bipolar Transistors Length 0.119" (3.04mm)
Material Si
ON Semiconductor Material Si
Bipolar Transistors Material Si
ON Semiconductor Bipolar Transistors Material Si
Mounting Type Surface Mount
ON Semiconductor Mounting Type Surface Mount
Bipolar Transistors Mounting Type Surface Mount
ON Semiconductor Bipolar Transistors Mounting Type Surface Mount
Number of Elements per Chip 1
ON Semiconductor Number of Elements per Chip 1
Bipolar Transistors Number of Elements per Chip 1
ON Semiconductor Bipolar Transistors Number of Elements per Chip 1
Number of Pins 3
ON Semiconductor Number of Pins 3
Bipolar Transistors Number of Pins 3
ON Semiconductor Bipolar Transistors Number of Pins 3
Package Type SOT-23
ON Semiconductor Package Type SOT-23
Bipolar Transistors Package Type SOT-23
ON Semiconductor Bipolar Transistors Package Type SOT-23
Power Dissipation 225 mW
ON Semiconductor Power Dissipation 225 mW
Bipolar Transistors Power Dissipation 225 mW
ON Semiconductor Bipolar Transistors Power Dissipation 225 mW
Temperature, Operating, Maximum +150 °C
ON Semiconductor Temperature, Operating, Maximum +150 °C
Bipolar Transistors Temperature, Operating, Maximum +150 °C
ON Semiconductor Bipolar Transistors Temperature, Operating, Maximum +150 °C
Temperature, Operating, Minimum -55 °C
ON Semiconductor Temperature, Operating, Minimum -55 °C
Bipolar Transistors Temperature, Operating, Minimum -55 °C
ON Semiconductor Bipolar Transistors Temperature, Operating, Minimum -55 °C
Temperature, Operating, Range -55 to +150 °C
ON Semiconductor Temperature, Operating, Range -55 to +150 °C
Bipolar Transistors Temperature, Operating, Range -55 to +150 °C
ON Semiconductor Bipolar Transistors Temperature, Operating, Range -55 to +150 °C
Transistor Type PNP
ON Semiconductor Transistor Type PNP
Bipolar Transistors Transistor Type PNP
ON Semiconductor Bipolar Transistors Transistor Type PNP
Voltage, Collector to Base -40 V
ON Semiconductor Voltage, Collector to Base -40 V
Bipolar Transistors Voltage, Collector to Base -40 V
ON Semiconductor Bipolar Transistors Voltage, Collector to Base -40 V
Voltage, Collector to Emitter -40 V
ON Semiconductor Voltage, Collector to Emitter -40 V
Bipolar Transistors Voltage, Collector to Emitter -40 V
ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter -40 V
Voltage, Collector to Emitter, Saturation -0.25 V
ON Semiconductor Voltage, Collector to Emitter, Saturation -0.25 V
Bipolar Transistors Voltage, Collector to Emitter, Saturation -0.25 V
ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter, Saturation -0.25 V
Voltage, Emitter to Base -5 V
ON Semiconductor Voltage, Emitter to Base -5 V
Bipolar Transistors Voltage, Emitter to Base -5 V
ON Semiconductor Bipolar Transistors Voltage, Emitter to Base -5 V
Voltage, Saturation, Base to Emitter -0.95 V
ON Semiconductor Voltage, Saturation, Base to Emitter -0.95 V
Bipolar Transistors Voltage, Saturation, Base to Emitter -0.95 V
ON Semiconductor Bipolar Transistors Voltage, Saturation, Base to Emitter -0.95 V
Width 0.055" (1.4mm)
ON Semiconductor Width 0.055" (1.4mm)
Bipolar Transistors Width 0.055" (1.4mm)
ON Semiconductor Bipolar Transistors Width 0.055" (1.4mm)
郵箱：
sales@szcwdz.com
Q Q：
800152669
手機(jī)網(wǎng)站：
m.szcwdz.com
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