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MJE13005G - 

Transistor, Bipolar; NPN Bipolar; Silicon; TO-220AB; 400; 9; 4 Adc Collector, PBF

ON Semiconductor MJE13005G
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制造商產(chǎn)品編號(hào):
MJE13005G
倉(cāng)庫(kù)庫(kù)存編號(hào):
70099657
技術(shù)數(shù)據(jù)表:
View MJE13005G Datasheet Datasheet
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MJE13005G產(chǎn)品信息

  Brand/Series  Transistor Series  
  Current, Collector  4 A  
  Current, Emitter  6 A  
  Current, Gain  40  
  Frequency  4 MHz  
  Package Type  TO-220AB  
  Polarity  NPN  
  Power Dissipation  2 W  
  Primary Type  Si  
  Resistance, Thermal, Junction to Case  1.67 °C/W  
  Type  Power  
  Voltage, Breakdown, Collector to Emitter  400 V  
  Voltage, Collector to Emitter  700 V  
  Voltage, Collector to Emitter, Saturation  1 V  
  Voltage, Emitter to Base  9 V  
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MJE13005G相關(guān)搜索

Brand/Series Transistor Series  ON Semiconductor Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  ON Semiconductor Bipolar Transistors Brand/Series Transistor Series   Current, Collector 4 A  ON Semiconductor Current, Collector 4 A  Bipolar Transistors Current, Collector 4 A  ON Semiconductor Bipolar Transistors Current, Collector 4 A   Current, Emitter 6 A  ON Semiconductor Current, Emitter 6 A  Bipolar Transistors Current, Emitter 6 A  ON Semiconductor Bipolar Transistors Current, Emitter 6 A   Current, Gain 40  ON Semiconductor Current, Gain 40  Bipolar Transistors Current, Gain 40  ON Semiconductor Bipolar Transistors Current, Gain 40   Frequency 4 MHz  ON Semiconductor Frequency 4 MHz  Bipolar Transistors Frequency 4 MHz  ON Semiconductor Bipolar Transistors Frequency 4 MHz   Package Type TO-220AB  ON Semiconductor Package Type TO-220AB  Bipolar Transistors Package Type TO-220AB  ON Semiconductor Bipolar Transistors Package Type TO-220AB   Polarity NPN  ON Semiconductor Polarity NPN  Bipolar Transistors Polarity NPN  ON Semiconductor Bipolar Transistors Polarity NPN   Power Dissipation 2 W  ON Semiconductor Power Dissipation 2 W  Bipolar Transistors Power Dissipation 2 W  ON Semiconductor Bipolar Transistors Power Dissipation 2 W   Primary Type Si  ON Semiconductor Primary Type Si  Bipolar Transistors Primary Type Si  ON Semiconductor Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 1.67 °C/W  ON Semiconductor Resistance, Thermal, Junction to Case 1.67 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 1.67 °C/W  ON Semiconductor Bipolar Transistors Resistance, Thermal, Junction to Case 1.67 °C/W   Type Power  ON Semiconductor Type Power  Bipolar Transistors Type Power  ON Semiconductor Bipolar Transistors Type Power   Voltage, Breakdown, Collector to Emitter 400 V  ON Semiconductor Voltage, Breakdown, Collector to Emitter 400 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 400 V  ON Semiconductor Bipolar Transistors Voltage, Breakdown, Collector to Emitter 400 V   Voltage, Collector to Emitter 700 V  ON Semiconductor Voltage, Collector to Emitter 700 V  Bipolar Transistors Voltage, Collector to Emitter 700 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter 700 V   Voltage, Collector to Emitter, Saturation 1 V  ON Semiconductor Voltage, Collector to Emitter, Saturation 1 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 1 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter, Saturation 1 V   Voltage, Emitter to Base 9 V  ON Semiconductor Voltage, Emitter to Base 9 V  Bipolar Transistors Voltage, Emitter to Base 9 V  ON Semiconductor Bipolar Transistors Voltage, Emitter to Base 9 V  
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