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MJD44H11G - 

NPN-SI, TRANSISTOR; NPN; 80 VDC (MAX.); 5 VDC (MAX.); 8 ADC (MAX.) COLLECTOR

ON Semiconductor MJD44H11G
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制造商產(chǎn)品編號:
MJD44H11G
倉庫庫存編號:
70099515
技術(shù)數(shù)據(jù)表:
View MJD44H11G Datasheet Datasheet
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MJD44H11G產(chǎn)品信息

  Brand/Series  Transistor Series  
  Configuration  Common Base  
  Current, Collector  16 A  
  Current, Gain  40  
  Dimensions  6.73 x 6.22 x 2.38 mm  
  Frequency, Operating  85 MHz  
  Height  0.094" (2.38mm)  
  Length  0.264" (6.73mm)  
  Material  Si  
  Mounting Type  Surface Mount  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  DPAK  
  Polarity  NPN  
  Power Dissipation  20 W  
  Primary Type  Si  
  Resistance, Thermal, Junction to Case  6.25 °C/W  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Transistor Type  NPN  
  Type  Power  
  Voltage, Breakdown, Collector to Emitter  80 V  
  Voltage, Collector to Emitter  80 V  
  Voltage, Collector to Emitter, Saturation  1 V  
  Voltage, Emitter to Base  5 V  
  Voltage, Saturation, Base to Emitter  1.5 V  
  Width  0.245" (6.22mm)  
關(guān)鍵詞         

MJD44H11G相關(guān)搜索

Brand/Series Transistor Series  ON Semiconductor Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  ON Semiconductor Bipolar Transistors Brand/Series Transistor Series   Configuration Common Base  ON Semiconductor Configuration Common Base  Bipolar Transistors Configuration Common Base  ON Semiconductor Bipolar Transistors Configuration Common Base   Current, Collector 16 A  ON Semiconductor Current, Collector 16 A  Bipolar Transistors Current, Collector 16 A  ON Semiconductor Bipolar Transistors Current, Collector 16 A   Current, Gain 40  ON Semiconductor Current, Gain 40  Bipolar Transistors Current, Gain 40  ON Semiconductor Bipolar Transistors Current, Gain 40   Dimensions 6.73 x 6.22 x 2.38 mm  ON Semiconductor Dimensions 6.73 x 6.22 x 2.38 mm  Bipolar Transistors Dimensions 6.73 x 6.22 x 2.38 mm  ON Semiconductor Bipolar Transistors Dimensions 6.73 x 6.22 x 2.38 mm   Frequency, Operating 85 MHz  ON Semiconductor Frequency, Operating 85 MHz  Bipolar Transistors Frequency, Operating 85 MHz  ON Semiconductor Bipolar Transistors Frequency, Operating 85 MHz   Height 0.094" (2.38mm)  ON Semiconductor Height 0.094" (2.38mm)  Bipolar Transistors Height 0.094" (2.38mm)  ON Semiconductor Bipolar Transistors Height 0.094" (2.38mm)   Length 0.264" (6.73mm)  ON Semiconductor Length 0.264" (6.73mm)  Bipolar Transistors Length 0.264" (6.73mm)  ON Semiconductor Bipolar Transistors Length 0.264" (6.73mm)   Material Si  ON Semiconductor Material Si  Bipolar Transistors Material Si  ON Semiconductor Bipolar Transistors Material Si   Mounting Type Surface Mount  ON Semiconductor Mounting Type Surface Mount  Bipolar Transistors Mounting Type Surface Mount  ON Semiconductor Bipolar Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  ON Semiconductor Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  ON Semiconductor Number of Pins 3  Bipolar Transistors Number of Pins 3  ON Semiconductor Bipolar Transistors Number of Pins 3   Package Type DPAK  ON Semiconductor Package Type DPAK  Bipolar Transistors Package Type DPAK  ON Semiconductor Bipolar Transistors Package Type DPAK   Polarity NPN  ON Semiconductor Polarity NPN  Bipolar Transistors Polarity NPN  ON Semiconductor Bipolar Transistors Polarity NPN   Power Dissipation 20 W  ON Semiconductor Power Dissipation 20 W  Bipolar Transistors Power Dissipation 20 W  ON Semiconductor Bipolar Transistors Power Dissipation 20 W   Primary Type Si  ON Semiconductor Primary Type Si  Bipolar Transistors Primary Type Si  ON Semiconductor Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 6.25 °C/W  ON Semiconductor Resistance, Thermal, Junction to Case 6.25 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 6.25 °C/W  ON Semiconductor Bipolar Transistors Resistance, Thermal, Junction to Case 6.25 °C/W   Temperature, Operating, Maximum +150 °C  ON Semiconductor Temperature, Operating, Maximum +150 °C  Bipolar Transistors Temperature, Operating, Maximum +150 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  ON Semiconductor Temperature, Operating, Minimum -55 °C  Bipolar Transistors Temperature, Operating, Minimum -55 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Temperature, Operating, Range -55 to +150 °C  Bipolar Transistors Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Range -55 to +150 °C   Transistor Type NPN  ON Semiconductor Transistor Type NPN  Bipolar Transistors Transistor Type NPN  ON Semiconductor Bipolar Transistors Transistor Type NPN   Type Power  ON Semiconductor Type Power  Bipolar Transistors Type Power  ON Semiconductor Bipolar Transistors Type Power   Voltage, Breakdown, Collector to Emitter 80 V  ON Semiconductor Voltage, Breakdown, Collector to Emitter 80 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 80 V  ON Semiconductor Bipolar Transistors Voltage, Breakdown, Collector to Emitter 80 V   Voltage, Collector to Emitter 80 V  ON Semiconductor Voltage, Collector to Emitter 80 V  Bipolar Transistors Voltage, Collector to Emitter 80 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter 80 V   Voltage, Collector to Emitter, Saturation 1 V  ON Semiconductor Voltage, Collector to Emitter, Saturation 1 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 1 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter, Saturation 1 V   Voltage, Emitter to Base 5 V  ON Semiconductor Voltage, Emitter to Base 5 V  Bipolar Transistors Voltage, Emitter to Base 5 V  ON Semiconductor Bipolar Transistors Voltage, Emitter to Base 5 V   Voltage, Saturation, Base to Emitter 1.5 V  ON Semiconductor Voltage, Saturation, Base to Emitter 1.5 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 1.5 V  ON Semiconductor Bipolar Transistors Voltage, Saturation, Base to Emitter 1.5 V   Width 0.245" (6.22mm)  ON Semiconductor Width 0.245" (6.22mm)  Bipolar Transistors Width 0.245" (6.22mm)  ON Semiconductor Bipolar Transistors Width 0.245" (6.22mm)  
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