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MJ4502G - 

PNP-SI, TRANSISTOR; PNP; 100VDC; 100VDC; 4VDC; 30 ADC COLLECTOR; 7.5 ADC IB

ON Semiconductor MJ4502G
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制造商產(chǎn)品編號(hào):
MJ4502G
倉庫庫存編號(hào):
70100134
技術(shù)數(shù)據(jù)表:
View MJ4502G Datasheet Datasheet
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MJ4502G產(chǎn)品信息

  Brand/Series  Transistor Series  
  Configuration  Common Base  
  Current, Collector  30 A  
  Current, Gain  25  
  Dimensions  39.37 x 8.51 x 26.67 mm  
  Frequency, Operating  2 MHz  
  Height  1.05" (26.67mm)  
  Length  1.55" (39.37mm)  
  Material  Si  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  2  
  Package Type  TO-204AA  
  Polarity  PNP  
  Power Dissipation  200 W  
  Primary Type  Si  
  Resistance, Thermal, Junction to Case  0.875 °C/W  
  Temperature, Operating, Maximum  +200 °C  
  Temperature, Operating, Minimum  -65 °C  
  Temperature, Operating, Range  -65 to +200 °C  
  Transistor Type  PNP  
  Type  High Power  
  Voltage, Breakdown, Collector to Emitter  100 V  
  Voltage, Collector to Base  100 V  
  Voltage, Collector to Emitter  100 V  
  Voltage, Collector to Emitter, Saturation  0.8 V  
  Voltage, Emitter to Base  4 V  
  Voltage, Saturation, Base to Emitter  1.3 V  
  Width  0.335" (8.51mm)  
關(guān)鍵詞         

MJ4502G相關(guān)搜索

Brand/Series Transistor Series  ON Semiconductor Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  ON Semiconductor Bipolar Transistors Brand/Series Transistor Series   Configuration Common Base  ON Semiconductor Configuration Common Base  Bipolar Transistors Configuration Common Base  ON Semiconductor Bipolar Transistors Configuration Common Base   Current, Collector 30 A  ON Semiconductor Current, Collector 30 A  Bipolar Transistors Current, Collector 30 A  ON Semiconductor Bipolar Transistors Current, Collector 30 A   Current, Gain 25  ON Semiconductor Current, Gain 25  Bipolar Transistors Current, Gain 25  ON Semiconductor Bipolar Transistors Current, Gain 25   Dimensions 39.37 x 8.51 x 26.67 mm  ON Semiconductor Dimensions 39.37 x 8.51 x 26.67 mm  Bipolar Transistors Dimensions 39.37 x 8.51 x 26.67 mm  ON Semiconductor Bipolar Transistors Dimensions 39.37 x 8.51 x 26.67 mm   Frequency, Operating 2 MHz  ON Semiconductor Frequency, Operating 2 MHz  Bipolar Transistors Frequency, Operating 2 MHz  ON Semiconductor Bipolar Transistors Frequency, Operating 2 MHz   Height 1.05" (26.67mm)  ON Semiconductor Height 1.05" (26.67mm)  Bipolar Transistors Height 1.05" (26.67mm)  ON Semiconductor Bipolar Transistors Height 1.05" (26.67mm)   Length 1.55" (39.37mm)  ON Semiconductor Length 1.55" (39.37mm)  Bipolar Transistors Length 1.55" (39.37mm)  ON Semiconductor Bipolar Transistors Length 1.55" (39.37mm)   Material Si  ON Semiconductor Material Si  Bipolar Transistors Material Si  ON Semiconductor Bipolar Transistors Material Si   Mounting Type Through Hole  ON Semiconductor Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  ON Semiconductor Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  ON Semiconductor Bipolar Transistors Number of Elements per Chip 1   Number of Pins 2  ON Semiconductor Number of Pins 2  Bipolar Transistors Number of Pins 2  ON Semiconductor Bipolar Transistors Number of Pins 2   Package Type TO-204AA  ON Semiconductor Package Type TO-204AA  Bipolar Transistors Package Type TO-204AA  ON Semiconductor Bipolar Transistors Package Type TO-204AA   Polarity PNP  ON Semiconductor Polarity PNP  Bipolar Transistors Polarity PNP  ON Semiconductor Bipolar Transistors Polarity PNP   Power Dissipation 200 W  ON Semiconductor Power Dissipation 200 W  Bipolar Transistors Power Dissipation 200 W  ON Semiconductor Bipolar Transistors Power Dissipation 200 W   Primary Type Si  ON Semiconductor Primary Type Si  Bipolar Transistors Primary Type Si  ON Semiconductor Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 0.875 °C/W  ON Semiconductor Resistance, Thermal, Junction to Case 0.875 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 0.875 °C/W  ON Semiconductor Bipolar Transistors Resistance, Thermal, Junction to Case 0.875 °C/W   Temperature, Operating, Maximum +200 °C  ON Semiconductor Temperature, Operating, Maximum +200 °C  Bipolar Transistors Temperature, Operating, Maximum +200 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Maximum +200 °C   Temperature, Operating, Minimum -65 °C  ON Semiconductor Temperature, Operating, Minimum -65 °C  Bipolar Transistors Temperature, Operating, Minimum -65 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Minimum -65 °C   Temperature, Operating, Range -65 to +200 °C  ON Semiconductor Temperature, Operating, Range -65 to +200 °C  Bipolar Transistors Temperature, Operating, Range -65 to +200 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Range -65 to +200 °C   Transistor Type PNP  ON Semiconductor Transistor Type PNP  Bipolar Transistors Transistor Type PNP  ON Semiconductor Bipolar Transistors Transistor Type PNP   Type High Power  ON Semiconductor Type High Power  Bipolar Transistors Type High Power  ON Semiconductor Bipolar Transistors Type High Power   Voltage, Breakdown, Collector to Emitter 100 V  ON Semiconductor Voltage, Breakdown, Collector to Emitter 100 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 100 V  ON Semiconductor Bipolar Transistors Voltage, Breakdown, Collector to Emitter 100 V   Voltage, Collector to Base 100 V  ON Semiconductor Voltage, Collector to Base 100 V  Bipolar Transistors Voltage, Collector to Base 100 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Base 100 V   Voltage, Collector to Emitter 100 V  ON Semiconductor Voltage, Collector to Emitter 100 V  Bipolar Transistors Voltage, Collector to Emitter 100 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter 100 V   Voltage, Collector to Emitter, Saturation 0.8 V  ON Semiconductor Voltage, Collector to Emitter, Saturation 0.8 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.8 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.8 V   Voltage, Emitter to Base 4 V  ON Semiconductor Voltage, Emitter to Base 4 V  Bipolar Transistors Voltage, Emitter to Base 4 V  ON Semiconductor Bipolar Transistors Voltage, Emitter to Base 4 V   Voltage, Saturation, Base to Emitter 1.3 V  ON Semiconductor Voltage, Saturation, Base to Emitter 1.3 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 1.3 V  ON Semiconductor Bipolar Transistors Voltage, Saturation, Base to Emitter 1.3 V   Width 0.335" (8.51mm)  ON Semiconductor Width 0.335" (8.51mm)  Bipolar Transistors Width 0.335" (8.51mm)  ON Semiconductor Bipolar Transistors Width 0.335" (8.51mm)  
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