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MJ11016G - 

ON Semi MJ11016G NPN Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204

ON Semiconductor MJ11016G
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制造商產(chǎn)品編號(hào):
MJ11016G
倉(cāng)庫(kù)庫(kù)存編號(hào):
70099985
技術(shù)數(shù)據(jù)表:
View MJ11016G Datasheet Datasheet
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MJ11016G產(chǎn)品信息

  Brand/Series  Transistor Series  
  Configuration  Dual  
  Current, Base  1 A  
  Current, Continuous Collector  30 A  
  Current, Gain  200  
  Current, Output  30 A  
  Current, Output, Leakage  1 mA  
  Dimensions  39.37 x 8.51 x 26.67 mm  
  Height  1.05" (26.67mm)  
  Input Voltage  5 V  
  Length  1.55" (39.37mm)  
  Mounting Type  Through Hole  
  Number of Elements per Chip  2  
  Number of Pins  2  
  Package Type  TO-3  
  Polarity  NPN  
  Power Dissipation  200 W  
  Primary Type  Si  
  Temperature, Operating, Maximum  +200 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +200 °C  
  Transistor Type  NPN  
  Type  High Current, Power  
  Voltage, Collector to Base  120 V  
  Voltage, Collector to Emitter  120 V  
  Voltage, Collector to Emitter, Saturation  4 V  
  Voltage, Emitter to Base  5 V  
  Voltage, Output  120 V  
  Voltage, Saturation, Base to Emitter  5 V  
  Width  0.335" (8.51mm)  
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MJ11016G相關(guān)搜索

Brand/Series Transistor Series  ON Semiconductor Brand/Series Transistor Series  Darlington Transistors Brand/Series Transistor Series  ON Semiconductor Darlington Transistors Brand/Series Transistor Series   Configuration Dual  ON Semiconductor Configuration Dual  Darlington Transistors Configuration Dual  ON Semiconductor Darlington Transistors Configuration Dual   Current, Base 1 A  ON Semiconductor Current, Base 1 A  Darlington Transistors Current, Base 1 A  ON Semiconductor Darlington Transistors Current, Base 1 A   Current, Continuous Collector 30 A  ON Semiconductor Current, Continuous Collector 30 A  Darlington Transistors Current, Continuous Collector 30 A  ON Semiconductor Darlington Transistors Current, Continuous Collector 30 A   Current, Gain 200  ON Semiconductor Current, Gain 200  Darlington Transistors Current, Gain 200  ON Semiconductor Darlington Transistors Current, Gain 200   Current, Output 30 A  ON Semiconductor Current, Output 30 A  Darlington Transistors Current, Output 30 A  ON Semiconductor Darlington Transistors Current, Output 30 A   Current, Output, Leakage 1 mA  ON Semiconductor Current, Output, Leakage 1 mA  Darlington Transistors Current, Output, Leakage 1 mA  ON Semiconductor Darlington Transistors Current, Output, Leakage 1 mA   Dimensions 39.37 x 8.51 x 26.67 mm  ON Semiconductor Dimensions 39.37 x 8.51 x 26.67 mm  Darlington Transistors Dimensions 39.37 x 8.51 x 26.67 mm  ON Semiconductor Darlington Transistors Dimensions 39.37 x 8.51 x 26.67 mm   Height 1.05" (26.67mm)  ON Semiconductor Height 1.05" (26.67mm)  Darlington Transistors Height 1.05" (26.67mm)  ON Semiconductor Darlington Transistors Height 1.05" (26.67mm)   Input Voltage 5 V  ON Semiconductor Input Voltage 5 V  Darlington Transistors Input Voltage 5 V  ON Semiconductor Darlington Transistors Input Voltage 5 V   Length 1.55" (39.37mm)  ON Semiconductor Length 1.55" (39.37mm)  Darlington Transistors Length 1.55" (39.37mm)  ON Semiconductor Darlington Transistors Length 1.55" (39.37mm)   Mounting Type Through Hole  ON Semiconductor Mounting Type Through Hole  Darlington Transistors Mounting Type Through Hole  ON Semiconductor Darlington Transistors Mounting Type Through Hole   Number of Elements per Chip 2  ON Semiconductor Number of Elements per Chip 2  Darlington Transistors Number of Elements per Chip 2  ON Semiconductor Darlington Transistors Number of Elements per Chip 2   Number of Pins 2  ON Semiconductor Number of Pins 2  Darlington Transistors Number of Pins 2  ON Semiconductor Darlington Transistors Number of Pins 2   Package Type TO-3  ON Semiconductor Package Type TO-3  Darlington Transistors Package Type TO-3  ON Semiconductor Darlington Transistors Package Type TO-3   Polarity NPN  ON Semiconductor Polarity NPN  Darlington Transistors Polarity NPN  ON Semiconductor Darlington Transistors Polarity NPN   Power Dissipation 200 W  ON Semiconductor Power Dissipation 200 W  Darlington Transistors Power Dissipation 200 W  ON Semiconductor Darlington Transistors Power Dissipation 200 W   Primary Type Si  ON Semiconductor Primary Type Si  Darlington Transistors Primary Type Si  ON Semiconductor Darlington Transistors Primary Type Si   Temperature, Operating, Maximum +200 °C  ON Semiconductor Temperature, Operating, Maximum +200 °C  Darlington Transistors Temperature, Operating, Maximum +200 °C  ON Semiconductor Darlington Transistors Temperature, Operating, Maximum +200 °C   Temperature, Operating, Minimum -55 °C  ON Semiconductor Temperature, Operating, Minimum -55 °C  Darlington Transistors Temperature, Operating, Minimum -55 °C  ON Semiconductor Darlington Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +200 °C  ON Semiconductor Temperature, Operating, Range -55 to +200 °C  Darlington Transistors Temperature, Operating, Range -55 to +200 °C  ON Semiconductor Darlington Transistors Temperature, Operating, Range -55 to +200 °C   Transistor Type NPN  ON Semiconductor Transistor Type NPN  Darlington Transistors Transistor Type NPN  ON Semiconductor Darlington Transistors Transistor Type NPN   Type High Current, Power  ON Semiconductor Type High Current, Power  Darlington Transistors Type High Current, Power  ON Semiconductor Darlington Transistors Type High Current, Power   Voltage, Collector to Base 120 V  ON Semiconductor Voltage, Collector to Base 120 V  Darlington Transistors Voltage, Collector to Base 120 V  ON Semiconductor Darlington Transistors Voltage, Collector to Base 120 V   Voltage, Collector to Emitter 120 V  ON Semiconductor Voltage, Collector to Emitter 120 V  Darlington Transistors Voltage, Collector to Emitter 120 V  ON Semiconductor Darlington Transistors Voltage, Collector to Emitter 120 V   Voltage, Collector to Emitter, Saturation 4 V  ON Semiconductor Voltage, Collector to Emitter, Saturation 4 V  Darlington Transistors Voltage, Collector to Emitter, Saturation 4 V  ON Semiconductor Darlington Transistors Voltage, Collector to Emitter, Saturation 4 V   Voltage, Emitter to Base 5 V  ON Semiconductor Voltage, Emitter to Base 5 V  Darlington Transistors Voltage, Emitter to Base 5 V  ON Semiconductor Darlington Transistors Voltage, Emitter to Base 5 V   Voltage, Output 120 V  ON Semiconductor Voltage, Output 120 V  Darlington Transistors Voltage, Output 120 V  ON Semiconductor Darlington Transistors Voltage, Output 120 V   Voltage, Saturation, Base to Emitter 5 V  ON Semiconductor Voltage, Saturation, Base to Emitter 5 V  Darlington Transistors Voltage, Saturation, Base to Emitter 5 V  ON Semiconductor Darlington Transistors Voltage, Saturation, Base to Emitter 5 V   Width 0.335" (8.51mm)  ON Semiconductor Width 0.335" (8.51mm)  Darlington Transistors Width 0.335" (8.51mm)  ON Semiconductor Darlington Transistors Width 0.335" (8.51mm)  
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