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BAS19LT1G - 

DIODE SWITCH 200MA 120V SOT23 PKG

ON Semiconductor BAS19LT1G
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制造商產(chǎn)品編號(hào):
BAS19LT1G
倉(cāng)庫(kù)庫(kù)存編號(hào):
70100350
技術(shù)數(shù)據(jù)表:
View BAS19LT1G Datasheet Datasheet
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BAS19LT1G產(chǎn)品信息

  Brand/Series  BAS Series  
  Capacitance, Diode  5 pF  
  Capacitance, Junction  5 pF  
  Configuration  Single  
  Current, Forward  200 mA  
  Current, Surge  625 mA  
  Dimensions  3.04 x 1.4 x 1.01 mm  
  Frequency Range  1 MHz  
  Height  0.04" (1.01mm)  
  Length  0.119" (3.04mm)  
  Mounting Type  Surface Mount  
  Number of Pins  3  
  Package Type  SOT-23  
  Power Dissipation  385 mW  
  Primary Type  Schottky Barrier  
  Speed, Switching  Switching  
  Temperature, Junction, Maximum  +150 °C  
  Temperature, Operating  -55 to +150 °C  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Time, Recovery  50 ns  
  Voltage, Forward  1.25 V  
  Voltage, Reverse  120 V  
  Width  0.055" (1.4mm)  
關(guān)鍵詞         

BAS19LT1G相關(guān)搜索

Brand/Series BAS Series  ON Semiconductor Brand/Series BAS Series  Switching Diodes Brand/Series BAS Series  ON Semiconductor Switching Diodes Brand/Series BAS Series   Capacitance, Diode 5 pF  ON Semiconductor Capacitance, Diode 5 pF  Switching Diodes Capacitance, Diode 5 pF  ON Semiconductor Switching Diodes Capacitance, Diode 5 pF   Capacitance, Junction 5 pF  ON Semiconductor Capacitance, Junction 5 pF  Switching Diodes Capacitance, Junction 5 pF  ON Semiconductor Switching Diodes Capacitance, Junction 5 pF   Configuration Single  ON Semiconductor Configuration Single  Switching Diodes Configuration Single  ON Semiconductor Switching Diodes Configuration Single   Current, Forward 200 mA  ON Semiconductor Current, Forward 200 mA  Switching Diodes Current, Forward 200 mA  ON Semiconductor Switching Diodes Current, Forward 200 mA   Current, Surge 625 mA  ON Semiconductor Current, Surge 625 mA  Switching Diodes Current, Surge 625 mA  ON Semiconductor Switching Diodes Current, Surge 625 mA   Dimensions 3.04 x 1.4 x 1.01 mm  ON Semiconductor Dimensions 3.04 x 1.4 x 1.01 mm  Switching Diodes Dimensions 3.04 x 1.4 x 1.01 mm  ON Semiconductor Switching Diodes Dimensions 3.04 x 1.4 x 1.01 mm   Frequency Range 1 MHz  ON Semiconductor Frequency Range 1 MHz  Switching Diodes Frequency Range 1 MHz  ON Semiconductor Switching Diodes Frequency Range 1 MHz   Height 0.04" (1.01mm)  ON Semiconductor Height 0.04" (1.01mm)  Switching Diodes Height 0.04" (1.01mm)  ON Semiconductor Switching Diodes Height 0.04" (1.01mm)   Length 0.119" (3.04mm)  ON Semiconductor Length 0.119" (3.04mm)  Switching Diodes Length 0.119" (3.04mm)  ON Semiconductor Switching Diodes Length 0.119" (3.04mm)   Mounting Type Surface Mount  ON Semiconductor Mounting Type Surface Mount  Switching Diodes Mounting Type Surface Mount  ON Semiconductor Switching Diodes Mounting Type Surface Mount   Number of Pins 3  ON Semiconductor Number of Pins 3  Switching Diodes Number of Pins 3  ON Semiconductor Switching Diodes Number of Pins 3   Package Type SOT-23  ON Semiconductor Package Type SOT-23  Switching Diodes Package Type SOT-23  ON Semiconductor Switching Diodes Package Type SOT-23   Power Dissipation 385 mW  ON Semiconductor Power Dissipation 385 mW  Switching Diodes Power Dissipation 385 mW  ON Semiconductor Switching Diodes Power Dissipation 385 mW   Primary Type Schottky Barrier  ON Semiconductor Primary Type Schottky Barrier  Switching Diodes Primary Type Schottky Barrier  ON Semiconductor Switching Diodes Primary Type Schottky Barrier   Speed, Switching Switching  ON Semiconductor Speed, Switching Switching  Switching Diodes Speed, Switching Switching  ON Semiconductor Switching Diodes Speed, Switching Switching   Temperature, Junction, Maximum +150 °C  ON Semiconductor Temperature, Junction, Maximum +150 °C  Switching Diodes Temperature, Junction, Maximum +150 °C  ON Semiconductor Switching Diodes Temperature, Junction, Maximum +150 °C   Temperature, Operating -55 to +150 °C  ON Semiconductor Temperature, Operating -55 to +150 °C  Switching Diodes Temperature, Operating -55 to +150 °C  ON Semiconductor Switching Diodes Temperature, Operating -55 to +150 °C   Temperature, Operating, Maximum +150 °C  ON Semiconductor Temperature, Operating, Maximum +150 °C  Switching Diodes Temperature, Operating, Maximum +150 °C  ON Semiconductor Switching Diodes Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  ON Semiconductor Temperature, Operating, Minimum -55 °C  Switching Diodes Temperature, Operating, Minimum -55 °C  ON Semiconductor Switching Diodes Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Temperature, Operating, Range -55 to +150 °C  Switching Diodes Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Switching Diodes Temperature, Operating, Range -55 to +150 °C   Time, Recovery 50 ns  ON Semiconductor Time, Recovery 50 ns  Switching Diodes Time, Recovery 50 ns  ON Semiconductor Switching Diodes Time, Recovery 50 ns   Voltage, Forward 1.25 V  ON Semiconductor Voltage, Forward 1.25 V  Switching Diodes Voltage, Forward 1.25 V  ON Semiconductor Switching Diodes Voltage, Forward 1.25 V   Voltage, Reverse 120 V  ON Semiconductor Voltage, Reverse 120 V  Switching Diodes Voltage, Reverse 120 V  ON Semiconductor Switching Diodes Voltage, Reverse 120 V   Width 0.055" (1.4mm)  ON Semiconductor Width 0.055" (1.4mm)  Switching Diodes Width 0.055" (1.4mm)  ON Semiconductor Switching Diodes Width 0.055" (1.4mm)  
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