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NTE386 - 

T-NPN SI HV HI-SPEED SW

NTE Electronics, Inc. NTE386
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制造商產(chǎn)品編號：
NTE386
倉庫庫存編號：
70215772
技術數(shù)據(jù)表：
View NTE386 Datasheet Datasheet
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NTE386產(chǎn)品概述

Silicon NPN Transistor Audio Power Amp, Switch, 175 W Power Dissipation
The NTE386 is a silicon NPN power transistor in a TO3 type package designed for high voltage, high- speed power switching in inductive circuit where fall time is critical. This device is particularly suited for line operated switchmode applications.

NTE386產(chǎn)品信息

  Brand/Series  Transistor Series  
  Configuration  Common Base  
  Current, Collector  20 A  
  Current, Gain  10  
  Diameter  22.2 mm  
  Dimensions  22.2 Dia. x 8.89 H mm  
  Gain, DC Current, Maximum  60  
  Gain, DC Current, Minimum  10  
  Height  0.35" (8.89mm)  
  Material  Si  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  TO-3  
  Polarity  NPN  
  Power Dissipation  175 W  
  Primary Type  Si  
  Resistance, Thermal, Junction to Case  1 °C/W  
  Temperature, Operating, Maximum  +200 °C  
  Temperature, Operating, Minimum  -65 °C  
  Temperature, Operating, Range  -65 to +200 °C  
  Transistor Type  NPN  
  Type  Audio Amplifier, Power  
  Voltage, Breakdown, Collector to Emitter  500 V  
  Voltage, Collector to Emitter  500 V  
  Voltage, Collector to Emitter, Saturation  5 V  
  Voltage, Emitter to Base  6 V  
  Voltage, Saturation, Collector to Emitter  1.8 to 5.0 V  
關鍵詞         

NTE386相關搜索

Brand/Series Transistor Series  NTE Electronics, Inc. Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  NTE Electronics, Inc. Bipolar Transistors Brand/Series Transistor Series   Configuration Common Base  NTE Electronics, Inc. Configuration Common Base  Bipolar Transistors Configuration Common Base  NTE Electronics, Inc. Bipolar Transistors Configuration Common Base   Current, Collector 20 A  NTE Electronics, Inc. Current, Collector 20 A  Bipolar Transistors Current, Collector 20 A  NTE Electronics, Inc. Bipolar Transistors Current, Collector 20 A   Current, Gain 10  NTE Electronics, Inc. Current, Gain 10  Bipolar Transistors Current, Gain 10  NTE Electronics, Inc. Bipolar Transistors Current, Gain 10   Diameter 22.2 mm  NTE Electronics, Inc. Diameter 22.2 mm  Bipolar Transistors Diameter 22.2 mm  NTE Electronics, Inc. Bipolar Transistors Diameter 22.2 mm   Dimensions 22.2 Dia. x 8.89 H mm  NTE Electronics, Inc. Dimensions 22.2 Dia. x 8.89 H mm  Bipolar Transistors Dimensions 22.2 Dia. x 8.89 H mm  NTE Electronics, Inc. Bipolar Transistors Dimensions 22.2 Dia. x 8.89 H mm   Gain, DC Current, Maximum 60  NTE Electronics, Inc. Gain, DC Current, Maximum 60  Bipolar Transistors Gain, DC Current, Maximum 60  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Maximum 60   Gain, DC Current, Minimum 10  NTE Electronics, Inc. Gain, DC Current, Minimum 10  Bipolar Transistors Gain, DC Current, Minimum 10  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Minimum 10   Height 0.35" (8.89mm)  NTE Electronics, Inc. Height 0.35" (8.89mm)  Bipolar Transistors Height 0.35" (8.89mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.35" (8.89mm)   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  NTE Electronics, Inc. Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  NTE Electronics, Inc. Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  Bipolar Transistors Number of Pins 3  NTE Electronics, Inc. Bipolar Transistors Number of Pins 3   Package Type TO-3  NTE Electronics, Inc. Package Type TO-3  Bipolar Transistors Package Type TO-3  NTE Electronics, Inc. Bipolar Transistors Package Type TO-3   Polarity NPN  NTE Electronics, Inc. Polarity NPN  Bipolar Transistors Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Polarity NPN   Power Dissipation 175 W  NTE Electronics, Inc. Power Dissipation 175 W  Bipolar Transistors Power Dissipation 175 W  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 175 W   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 1 °C/W  NTE Electronics, Inc. Resistance, Thermal, Junction to Case 1 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 1 °C/W  NTE Electronics, Inc. Bipolar Transistors Resistance, Thermal, Junction to Case 1 °C/W   Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +200 °C  Bipolar Transistors Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +200 °C   Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -65 °C  Bipolar Transistors Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Minimum -65 °C   Temperature, Operating, Range -65 to +200 °C  NTE Electronics, Inc. Temperature, Operating, Range -65 to +200 °C  Bipolar Transistors Temperature, Operating, Range -65 to +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range -65 to +200 °C   Transistor Type NPN  NTE Electronics, Inc. Transistor Type NPN  Bipolar Transistors Transistor Type NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Type NPN   Type Audio Amplifier, Power  NTE Electronics, Inc. Type Audio Amplifier, Power  Bipolar Transistors Type Audio Amplifier, Power  NTE Electronics, Inc. Bipolar Transistors Type Audio Amplifier, Power   Voltage, Breakdown, Collector to Emitter 500 V  NTE Electronics, Inc. Voltage, Breakdown, Collector to Emitter 500 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 500 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 500 V   Voltage, Collector to Emitter 500 V  NTE Electronics, Inc. Voltage, Collector to Emitter 500 V  Bipolar Transistors Voltage, Collector to Emitter 500 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 500 V   Voltage, Collector to Emitter, Saturation 5 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 5 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 5 V   Voltage, Emitter to Base 6 V  NTE Electronics, Inc. Voltage, Emitter to Base 6 V  Bipolar Transistors Voltage, Emitter to Base 6 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 6 V   Voltage, Saturation, Collector to Emitter 1.8 to 5.0 V  NTE Electronics, Inc. Voltage, Saturation, Collector to Emitter 1.8 to 5.0 V  Bipolar Transistors Voltage, Saturation, Collector to Emitter 1.8 to 5.0 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Collector to Emitter 1.8 to 5.0 V  
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