amphenol代理商
專業(yè)銷售Amphenol(安費(fèi)諾)全系列產(chǎn)品-英國2號倉庫
美國1號分類選型新加坡2號分類選型英國10號分類選型英國2號分類選型日本5號分類選型

在本站結(jié)果里搜索:    
熱門搜索詞:  Connectors  8910DPA43V02  Amphenol  UVZSeries 160VDC  70084122  IM21-14-CDTRI

NTE36 - 

TRANSISTOR NPN SILICON 160V IC=12A TO-3P CASE COMP'L TO NTE37 AUDIO POWER AMP/HI

NTE Electronics, Inc. NTE36
聲明:圖片僅供參考,請以實(shí)物為準(zhǔn)!
制造商產(chǎn)品編號:
NTE36
倉庫庫存編號:
70215713
技術(shù)數(shù)據(jù)表:
View NTE36 Datasheet Datasheet
訂購熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫龐大,部分產(chǎn)品信息可能未能及時更新,下單前請與銷售人員確認(rèn)好實(shí)時在庫數(shù)量,謝謝合作!

NTE36產(chǎn)品概述

Silicon Complementary Transistors, AF Power Amplifier, High Current Switch, NPN Transistor Type
Designed for AF power amplifier and high current switching applications.

NTE36產(chǎn)品信息

  Brand/Series  Transistor Series  
  Configuration  Common Base  
  Current, Collector  12 A  
  Current, Gain  20  
  Dimensions  15.62 x 4.82 x 20.0 mm  
  Frequency, Operating  15 MHz  
  Gain, DC Current, Maximum  200  
  Gain, DC Current, Minimum  60  
  Height  0.787" (20mm)  
  Length  0.614" (15.62mm)  
  Material  Si  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  TO-3P  
  Polarity  NPN  
  Power Dissipation  100 W  
  Primary Type  Si  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Range  Maximum of +150 °C  
  Transistor Type  NPN  
  Type  AF, Amplifier, High Current  
  Voltage, Breakdown, Collector to Emitter  140 V  
  Voltage, Collector to Base  160 V  
  Voltage, Collector to Emitter  140 V  
  Voltage, Collector to Emitter, Saturation  2.5 V  
  Voltage, Emitter to Base  6 V  
  Voltage, Saturation, Collector to Emitter  0.6 V  
  Width  0.19" (4.82mm)  
關(guān)鍵詞         

NTE36相關(guān)搜索

Brand/Series Transistor Series  NTE Electronics, Inc. Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  NTE Electronics, Inc. Bipolar Transistors Brand/Series Transistor Series   Configuration Common Base  NTE Electronics, Inc. Configuration Common Base  Bipolar Transistors Configuration Common Base  NTE Electronics, Inc. Bipolar Transistors Configuration Common Base   Current, Collector 12 A  NTE Electronics, Inc. Current, Collector 12 A  Bipolar Transistors Current, Collector 12 A  NTE Electronics, Inc. Bipolar Transistors Current, Collector 12 A   Current, Gain 20  NTE Electronics, Inc. Current, Gain 20  Bipolar Transistors Current, Gain 20  NTE Electronics, Inc. Bipolar Transistors Current, Gain 20   Dimensions 15.62 x 4.82 x 20.0 mm  NTE Electronics, Inc. Dimensions 15.62 x 4.82 x 20.0 mm  Bipolar Transistors Dimensions 15.62 x 4.82 x 20.0 mm  NTE Electronics, Inc. Bipolar Transistors Dimensions 15.62 x 4.82 x 20.0 mm   Frequency, Operating 15 MHz  NTE Electronics, Inc. Frequency, Operating 15 MHz  Bipolar Transistors Frequency, Operating 15 MHz  NTE Electronics, Inc. Bipolar Transistors Frequency, Operating 15 MHz   Gain, DC Current, Maximum 200  NTE Electronics, Inc. Gain, DC Current, Maximum 200  Bipolar Transistors Gain, DC Current, Maximum 200  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Maximum 200   Gain, DC Current, Minimum 60  NTE Electronics, Inc. Gain, DC Current, Minimum 60  Bipolar Transistors Gain, DC Current, Minimum 60  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Minimum 60   Height 0.787" (20mm)  NTE Electronics, Inc. Height 0.787" (20mm)  Bipolar Transistors Height 0.787" (20mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.787" (20mm)   Length 0.614" (15.62mm)  NTE Electronics, Inc. Length 0.614" (15.62mm)  Bipolar Transistors Length 0.614" (15.62mm)  NTE Electronics, Inc. Bipolar Transistors Length 0.614" (15.62mm)   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  NTE Electronics, Inc. Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  NTE Electronics, Inc. Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  Bipolar Transistors Number of Pins 3  NTE Electronics, Inc. Bipolar Transistors Number of Pins 3   Package Type TO-3P  NTE Electronics, Inc. Package Type TO-3P  Bipolar Transistors Package Type TO-3P  NTE Electronics, Inc. Bipolar Transistors Package Type TO-3P   Polarity NPN  NTE Electronics, Inc. Polarity NPN  Bipolar Transistors Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Polarity NPN   Power Dissipation 100 W  NTE Electronics, Inc. Power Dissipation 100 W  Bipolar Transistors Power Dissipation 100 W  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 100 W   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +150 °C  Bipolar Transistors Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Range Maximum of +150 °C  NTE Electronics, Inc. Temperature, Operating, Range Maximum of +150 °C  Bipolar Transistors Temperature, Operating, Range Maximum of +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range Maximum of +150 °C   Transistor Type NPN  NTE Electronics, Inc. Transistor Type NPN  Bipolar Transistors Transistor Type NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Type NPN   Type AF, Amplifier, High Current  NTE Electronics, Inc. Type AF, Amplifier, High Current  Bipolar Transistors Type AF, Amplifier, High Current  NTE Electronics, Inc. Bipolar Transistors Type AF, Amplifier, High Current   Voltage, Breakdown, Collector to Emitter 140 V  NTE Electronics, Inc. Voltage, Breakdown, Collector to Emitter 140 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 140 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 140 V   Voltage, Collector to Base 160 V  NTE Electronics, Inc. Voltage, Collector to Base 160 V  Bipolar Transistors Voltage, Collector to Base 160 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 160 V   Voltage, Collector to Emitter 140 V  NTE Electronics, Inc. Voltage, Collector to Emitter 140 V  Bipolar Transistors Voltage, Collector to Emitter 140 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 140 V   Voltage, Collector to Emitter, Saturation 2.5 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 2.5 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 2.5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 2.5 V   Voltage, Emitter to Base 6 V  NTE Electronics, Inc. Voltage, Emitter to Base 6 V  Bipolar Transistors Voltage, Emitter to Base 6 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 6 V   Voltage, Saturation, Collector to Emitter 0.6 V  NTE Electronics, Inc. Voltage, Saturation, Collector to Emitter 0.6 V  Bipolar Transistors Voltage, Saturation, Collector to Emitter 0.6 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Collector to Emitter 0.6 V   Width 0.19" (4.82mm)  NTE Electronics, Inc. Width 0.19" (4.82mm)  Bipolar Transistors Width 0.19" (4.82mm)  NTE Electronics, Inc. Bipolar Transistors Width 0.19" (4.82mm)  
電話:400-900-3095
QQ:800152669
關(guān)于我們 | Amphenol簡介 | Amphenol產(chǎn)品 | Amphenol產(chǎn)品應(yīng)用 | Amphenol動態(tài) | 按系列選型 | 按產(chǎn)品規(guī)格選型 | Amphenol選型手冊 | 付款方式 | 聯(lián)系我們
Copyright © 2017 m.habitrun.com All Rights Reserved. 技術(shù)支持:電子元器件 ICP備案證書號:粵ICP備11103613號