amphenol代理商
專業(yè)銷售Amphenol(安費(fèi)諾)全系列產(chǎn)品-英國(guó)2號(hào)倉庫
美國(guó)1號(hào)分類選型新加坡2號(hào)分類選型英國(guó)10號(hào)分類選型英國(guó)2號(hào)分類選型日本5號(hào)分類選型

在本站結(jié)果里搜索:    
熱門搜索詞:  Connectors  8910DPA43V02  Amphenol  UVZSeries 160VDC  70084122  IM21-14-CDTRI

NTE327 - 

TRANSISTOR NPN SILICON 180V IC=25A TO-3CASE POWER AMP AND SWITCH FOR INDUSTRIAL

NTE Electronics, Inc. NTE327
聲明:圖片僅供參考,請(qǐng)以實(shí)物為準(zhǔn)!
制造商產(chǎn)品編號(hào):
NTE327
倉庫庫存編號(hào):
70214626
技術(shù)數(shù)據(jù)表:
View NTE327 Datasheet Datasheet
訂購熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫龐大,部分產(chǎn)品信息可能未能及時(shí)更新,下單前請(qǐng)與銷售人員確認(rèn)好實(shí)時(shí)在庫數(shù)量,謝謝合作!

NTE327產(chǎn)品概述

NPN Transistor, 150 V Collector to Emitter Voltage, 180 V Collector to Base Voltage, TO3 Package
  • High collector-emitter sustaining voltage
  • High DC current gain
  • Low collector-emitter saturation voltage
  • Fast switching times
    Used for industrial amplifier and switching circuit applications.
  • NTE327產(chǎn)品信息

      Bandwidth, Current Gain  40 MHz  
      Brand/Series  Transistor Series  
      Configuration  Common Base  
      Current, Collector  25 A  
      Current, Gain  12  
      Frequency, Operating  40 MHz  
      Gain, DC Current, Maximum  120  
      Gain, DC Current, Minimum  30  
      Height  0.35" (8.89mm)  
      Material  Si  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Package Type  TO-3  
      Polarity  NPN  
      Power Dissipation  200 W  
      Primary Type  Si  
      Resistance, Thermal, Junction to Case  0.875 °C/W  
      Temperature, Operating, Maximum  +200 °C  
      Temperature, Operating, Minimum  -65 °C  
      Temperature, Operating, Range  -65 to +200 °C  
      Transistor Type  NPN  
      Type  Amplifier, Power  
      Voltage, Breakdown, Collector to Emitter  150 V  
      Voltage, Collector to Base  180 V  
      Voltage, Collector to Emitter  150 V  
      Voltage, Collector to Emitter, Saturation  1.8 V  
      Voltage, Emitter to Base  6 V  
      Voltage, Saturation, Base to Emitter  2.5 V  
      Voltage, Saturation, Collector to Emitter  1.8 V  
    關(guān)鍵詞         

    NTE327客戶還搜索了

    • 參考圖片
    • 制造商 / 說明 / 型號(hào) / 倉庫庫存編號(hào)
    • PDF
    • 操作

    NTE327相關(guān)搜索

    Bandwidth, Current Gain 40 MHz  NTE Electronics, Inc. Bandwidth, Current Gain 40 MHz  Bipolar Transistors Bandwidth, Current Gain 40 MHz  NTE Electronics, Inc. Bipolar Transistors Bandwidth, Current Gain 40 MHz   Brand/Series Transistor Series  NTE Electronics, Inc. Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  NTE Electronics, Inc. Bipolar Transistors Brand/Series Transistor Series   Configuration Common Base  NTE Electronics, Inc. Configuration Common Base  Bipolar Transistors Configuration Common Base  NTE Electronics, Inc. Bipolar Transistors Configuration Common Base   Current, Collector 25 A  NTE Electronics, Inc. Current, Collector 25 A  Bipolar Transistors Current, Collector 25 A  NTE Electronics, Inc. Bipolar Transistors Current, Collector 25 A   Current, Gain 12  NTE Electronics, Inc. Current, Gain 12  Bipolar Transistors Current, Gain 12  NTE Electronics, Inc. Bipolar Transistors Current, Gain 12   Frequency, Operating 40 MHz  NTE Electronics, Inc. Frequency, Operating 40 MHz  Bipolar Transistors Frequency, Operating 40 MHz  NTE Electronics, Inc. Bipolar Transistors Frequency, Operating 40 MHz   Gain, DC Current, Maximum 120  NTE Electronics, Inc. Gain, DC Current, Maximum 120  Bipolar Transistors Gain, DC Current, Maximum 120  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Maximum 120   Gain, DC Current, Minimum 30  NTE Electronics, Inc. Gain, DC Current, Minimum 30  Bipolar Transistors Gain, DC Current, Minimum 30  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Minimum 30   Height 0.35" (8.89mm)  NTE Electronics, Inc. Height 0.35" (8.89mm)  Bipolar Transistors Height 0.35" (8.89mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.35" (8.89mm)   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  NTE Electronics, Inc. Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  NTE Electronics, Inc. Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  Bipolar Transistors Number of Pins 3  NTE Electronics, Inc. Bipolar Transistors Number of Pins 3   Package Type TO-3  NTE Electronics, Inc. Package Type TO-3  Bipolar Transistors Package Type TO-3  NTE Electronics, Inc. Bipolar Transistors Package Type TO-3   Polarity NPN  NTE Electronics, Inc. Polarity NPN  Bipolar Transistors Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Polarity NPN   Power Dissipation 200 W  NTE Electronics, Inc. Power Dissipation 200 W  Bipolar Transistors Power Dissipation 200 W  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 200 W   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 0.875 °C/W  NTE Electronics, Inc. Resistance, Thermal, Junction to Case 0.875 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 0.875 °C/W  NTE Electronics, Inc. Bipolar Transistors Resistance, Thermal, Junction to Case 0.875 °C/W   Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +200 °C  Bipolar Transistors Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +200 °C   Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -65 °C  Bipolar Transistors Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Minimum -65 °C   Temperature, Operating, Range -65 to +200 °C  NTE Electronics, Inc. Temperature, Operating, Range -65 to +200 °C  Bipolar Transistors Temperature, Operating, Range -65 to +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range -65 to +200 °C   Transistor Type NPN  NTE Electronics, Inc. Transistor Type NPN  Bipolar Transistors Transistor Type NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Type NPN   Type Amplifier, Power  NTE Electronics, Inc. Type Amplifier, Power  Bipolar Transistors Type Amplifier, Power  NTE Electronics, Inc. Bipolar Transistors Type Amplifier, Power   Voltage, Breakdown, Collector to Emitter 150 V  NTE Electronics, Inc. Voltage, Breakdown, Collector to Emitter 150 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 150 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 150 V   Voltage, Collector to Base 180 V  NTE Electronics, Inc. Voltage, Collector to Base 180 V  Bipolar Transistors Voltage, Collector to Base 180 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 180 V   Voltage, Collector to Emitter 150 V  NTE Electronics, Inc. Voltage, Collector to Emitter 150 V  Bipolar Transistors Voltage, Collector to Emitter 150 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 150 V   Voltage, Collector to Emitter, Saturation 1.8 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 1.8 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 1.8 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 1.8 V   Voltage, Emitter to Base 6 V  NTE Electronics, Inc. Voltage, Emitter to Base 6 V  Bipolar Transistors Voltage, Emitter to Base 6 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 6 V   Voltage, Saturation, Base to Emitter 2.5 V  NTE Electronics, Inc. Voltage, Saturation, Base to Emitter 2.5 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 2.5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Base to Emitter 2.5 V   Voltage, Saturation, Collector to Emitter 1.8 V  NTE Electronics, Inc. Voltage, Saturation, Collector to Emitter 1.8 V  Bipolar Transistors Voltage, Saturation, Collector to Emitter 1.8 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Collector to Emitter 1.8 V  
    電話:400-900-3095
    QQ:800152669
    關(guān)于我們 | Amphenol簡(jiǎn)介 | Amphenol產(chǎn)品 | Amphenol產(chǎn)品應(yīng)用 | Amphenol動(dòng)態(tài) | 按系列選型 | 按產(chǎn)品規(guī)格選型 | Amphenol選型手冊(cè) | 付款方式 | 聯(lián)系我們
    Copyright © 2017 m.habitrun.com All Rights Reserved. 技術(shù)支持:電子元器件 ICP備案證書號(hào):粵ICP備11103613號(hào)