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NTE323 - 

TRANSISTOR PNP SILICON 120V IC=1.5A TO-39 CASE GENERAL PURPOSE SWITCH COMP'L TO

NTE Electronics, Inc. NTE323
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制造商產(chǎn)品編號(hào)：
NTE323
倉(cāng)庫(kù)庫(kù)存編號(hào)：
70215978
技術(shù)數(shù)據(jù)表：
View NTE323 Datasheet Datasheet
訂購(gòu)熱線： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫(kù)龐大，部分產(chǎn)品信息可能未能及時(shí)更新，下單前請(qǐng)與銷售人員確認(rèn)好實(shí)時(shí)在庫(kù)數(shù)量，謝謝合作！

NTE323產(chǎn)品概述

Silicon Complementary Transistor, PNP Transistor Type, 120 V Collector to Emitter Voltage
  • +200 °C maximum operating temperature
    Complementary silicon epitaxial planer transistors designed for use as drivers for high power transistors in general purpose amplifier and switching circuits.

    • NTE323產(chǎn)品信息

      Brand/Series  Transistor Series  
      Configuration  Common Base  
      Current, Collector  1 A  
      Current, Gain  5  
      Diameter  9.39 mm  
      Dimensions  9.39 Dia. x 6.6 H mm  
      Frequency, Operating  30 MHz  
      Gain, DC Current, Maximum  150 @ VCE ≥ 2 V, IC ≥ 250 mA  
      Gain, DC Current, Minimum  40 @ VCE ≥ 2 V, IC ≥ 250 mA  
      Height  0.26" (6.6mm)  
      Material  Si  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Package Type  TO-39  
      Polarity  PNP  
      Power Dissipation  10 W  
      Primary Type  Si  
      Resistance, Thermal, Junction to Case  17.4 °C/W  
      Temperature, Operating, Maximum  +200 °C  
      Temperature, Operating, Range  Maximum of +200 °C  
      Transistor Type  PNP  
      Type  Driver, Power  
      Voltage, Breakdown, Collector to Emitter  120 V  
      Voltage, Collector to Base  120 V  
      Voltage, Collector to Emitter  120 V  
      Voltage, Collector to Emitter, Saturation  2 V  
      Voltage, Emitter to Base  4 V  
      Voltage, Saturation, Collector to Emitter  0.6 V (Max.) @ IC ≥ 250 mA, IB ≥ 25 mA  
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    NTE323相關(guān)搜索

    Brand/Series Transistor Series  NTE Electronics, Inc. Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  NTE Electronics, Inc. Bipolar Transistors Brand/Series Transistor Series   Configuration Common Base  NTE Electronics, Inc. Configuration Common Base  Bipolar Transistors Configuration Common Base  NTE Electronics, Inc. Bipolar Transistors Configuration Common Base   Current, Collector 1 A  NTE Electronics, Inc. Current, Collector 1 A  Bipolar Transistors Current, Collector 1 A  NTE Electronics, Inc. Bipolar Transistors Current, Collector 1 A   Current, Gain 5  NTE Electronics, Inc. Current, Gain 5  Bipolar Transistors Current, Gain 5  NTE Electronics, Inc. Bipolar Transistors Current, Gain 5   Diameter 9.39 mm  NTE Electronics, Inc. Diameter 9.39 mm  Bipolar Transistors Diameter 9.39 mm  NTE Electronics, Inc. Bipolar Transistors Diameter 9.39 mm   Dimensions 9.39 Dia. x 6.6 H mm  NTE Electronics, Inc. Dimensions 9.39 Dia. x 6.6 H mm  Bipolar Transistors Dimensions 9.39 Dia. x 6.6 H mm  NTE Electronics, Inc. Bipolar Transistors Dimensions 9.39 Dia. x 6.6 H mm   Frequency, Operating 30 MHz  NTE Electronics, Inc. Frequency, Operating 30 MHz  Bipolar Transistors Frequency, Operating 30 MHz  NTE Electronics, Inc. Bipolar Transistors Frequency, Operating 30 MHz   Gain, DC Current, Maximum 150 @ VCE ≥ 2 V, IC ≥ 250 mA  NTE Electronics, Inc. Gain, DC Current, Maximum 150 @ VCE ≥ 2 V, IC ≥ 250 mA  Bipolar Transistors Gain, DC Current, Maximum 150 @ VCE ≥ 2 V, IC ≥ 250 mA  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Maximum 150 @ VCE ≥ 2 V, IC ≥ 250 mA   Gain, DC Current, Minimum 40 @ VCE ≥ 2 V, IC ≥ 250 mA  NTE Electronics, Inc. Gain, DC Current, Minimum 40 @ VCE ≥ 2 V, IC ≥ 250 mA  Bipolar Transistors Gain, DC Current, Minimum 40 @ VCE ≥ 2 V, IC ≥ 250 mA  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Minimum 40 @ VCE ≥ 2 V, IC ≥ 250 mA   Height 0.26" (6.6mm)  NTE Electronics, Inc. Height 0.26" (6.6mm)  Bipolar Transistors Height 0.26" (6.6mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.26" (6.6mm)   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  NTE Electronics, Inc. Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  NTE Electronics, Inc. Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  Bipolar Transistors Number of Pins 3  NTE Electronics, Inc. Bipolar Transistors Number of Pins 3   Package Type TO-39  NTE Electronics, Inc. Package Type TO-39  Bipolar Transistors Package Type TO-39  NTE Electronics, Inc. Bipolar Transistors Package Type TO-39   Polarity PNP  NTE Electronics, Inc. Polarity PNP  Bipolar Transistors Polarity PNP  NTE Electronics, Inc. Bipolar Transistors Polarity PNP   Power Dissipation 10 W  NTE Electronics, Inc. Power Dissipation 10 W  Bipolar Transistors Power Dissipation 10 W  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 10 W   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 17.4 °C/W  NTE Electronics, Inc. Resistance, Thermal, Junction to Case 17.4 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 17.4 °C/W  NTE Electronics, Inc. Bipolar Transistors Resistance, Thermal, Junction to Case 17.4 °C/W   Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +200 °C  Bipolar Transistors Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +200 °C   Temperature, Operating, Range Maximum of +200 °C  NTE Electronics, Inc. Temperature, Operating, Range Maximum of +200 °C  Bipolar Transistors Temperature, Operating, Range Maximum of +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range Maximum of +200 °C   Transistor Type PNP  NTE Electronics, Inc. Transistor Type PNP  Bipolar Transistors Transistor Type PNP  NTE Electronics, Inc. Bipolar Transistors Transistor Type PNP   Type Driver, Power  NTE Electronics, Inc. Type Driver, Power  Bipolar Transistors Type Driver, Power  NTE Electronics, Inc. Bipolar Transistors Type Driver, Power   Voltage, Breakdown, Collector to Emitter 120 V  NTE Electronics, Inc. Voltage, Breakdown, Collector to Emitter 120 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 120 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 120 V   Voltage, Collector to Base 120 V  NTE Electronics, Inc. Voltage, Collector to Base 120 V  Bipolar Transistors Voltage, Collector to Base 120 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 120 V   Voltage, Collector to Emitter 120 V  NTE Electronics, Inc. Voltage, Collector to Emitter 120 V  Bipolar Transistors Voltage, Collector to Emitter 120 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 120 V   Voltage, Collector to Emitter, Saturation 2 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 2 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 2 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 2 V   Voltage, Emitter to Base 4 V  NTE Electronics, Inc. Voltage, Emitter to Base 4 V  Bipolar Transistors Voltage, Emitter to Base 4 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 4 V   Voltage, Saturation, Collector to Emitter 0.6 V (Max.) @ IC ≥ 250 mA, IB ≥ 25 mA  NTE Electronics, Inc. Voltage, Saturation, Collector to Emitter 0.6 V (Max.) @ IC ≥ 250 mA, IB ≥ 25 mA  Bipolar Transistors Voltage, Saturation, Collector to Emitter 0.6 V (Max.) @ IC ≥ 250 mA, IB ≥ 25 mA  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Collector to Emitter 0.6 V (Max.) @ IC ≥ 250 mA, IB ≥ 25 mA  
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