Brand/Series |
Transistor Series |
|
Configuration |
Common Base |
|
Current, Collector |
50 mA |
|
Current, Gain |
25 |
|
Device Dissipation |
200 mW |
|
Diameter |
5.58 mm |
|
Dimensions |
5.58 Dia. x 4.82 H mm |
|
Frequency, Operating |
1400 MHz |
|
Gain, DC Current, Maximum |
250 @ VCE == 5V, IC == 2mA, f == 1kHz |
|
Gain, DC Current, Minimum |
25 |
|
Height |
0.19" (4.82mm) |
|
Material |
Si |
|
Mounting Type |
Through Hole |
|
Number of Elements per Chip |
1 |
|
Number of Pins |
2 |
|
Package Type |
TO-92 |
|
Polarity |
NPN |
|
Power Dissipation |
200 mW |
|
Primary Type |
Si |
|
Temperature Range, Junction, Operating |
No value |
|
Temperature, Operating, Maximum |
+200 °C |
|
Temperature, Operating, Minimum |
-65 °C |
|
Temperature, Operating, Range |
-65 to +200 °C |
|
Transistor Polarity |
NPN |
|
Transistor Type |
NPN |
|
Type |
High Power Gain, Low Noise |
|
Voltage, Breakdown, Collector to Emitter |
15 V |
|
Voltage, Collector to Base |
30 V |
|
Voltage, Collector to Emitter |
15 V |
|
Voltage, Emitter to Base |
3 V |
|
Voltage, Saturation, Collector to Emitter |
No Value |
|
關鍵詞 |