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NTE2371 - 

POWER MOSFET P-CHANNEL 100V ID=19A TO-220 CASE HIGH SPEED SWITCH ENHANCEMENT MOD

NTE Electronics, Inc. NTE2371
聲明:圖片僅供參考,請以實物為準!
制造商產(chǎn)品編號:
NTE2371
倉庫庫存編號:
70214945
技術(shù)數(shù)據(jù)表:
View NTE2371 Datasheet Datasheet
訂購熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫龐大,部分產(chǎn)品信息可能未能及時更新,下單前請與銷售人員確認好實時在庫數(shù)量,謝謝合作!

NTE2371產(chǎn)品概述

Features:
  • Dynamic dv/dt Rating
  • Repetitive Avalanche Rated
  • P-Channel
  • Fast Switching
  • Ease of Paralleling
  • Simple Drive Requirements
  • NTE2371產(chǎn)品信息

      Brand/Series  MOSFET Series  
      Capacitance, Input  1400 pF  
      Channel Mode  Enhancement  
      Channel Type  P  
      Configuration  Single  
      Current, Drain  19 A  
      Height  0.5" (12.7mm)  
      Length  0.42" (10.67mm)  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Package Type  TO-220  
      Power Dissipation  150 W  
      Resistance, Drain to Source On  0.2 Ω  
      Temperature, Operating, Maximum  +175 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +175 °C  
      Time, Turn-Off Delay  34 ns  
      Time, Turn-On Delay  16 ns  
      Transconductance, Forward  6.2 mhos  
      Typical Gate Charge @ Vgs  61 nC  
      Voltage, Drain to Source  100 V  
      Voltage, Forward, Diode  5 V  
      Voltage, Gate to Source  ±20 V  
    關(guān)鍵詞         

    NTE2371相關(guān)搜索

    Brand/Series MOSFET Series  NTE Electronics, Inc. Brand/Series MOSFET Series  MOSFET Transistors Brand/Series MOSFET Series  NTE Electronics, Inc. MOSFET Transistors Brand/Series MOSFET Series   Capacitance, Input 1400 pF  NTE Electronics, Inc. Capacitance, Input 1400 pF  MOSFET Transistors Capacitance, Input 1400 pF  NTE Electronics, Inc. MOSFET Transistors Capacitance, Input 1400 pF   Channel Mode Enhancement  NTE Electronics, Inc. Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  NTE Electronics, Inc. MOSFET Transistors Channel Mode Enhancement   Channel Type P  NTE Electronics, Inc. Channel Type P  MOSFET Transistors Channel Type P  NTE Electronics, Inc. MOSFET Transistors Channel Type P   Configuration Single  NTE Electronics, Inc. Configuration Single  MOSFET Transistors Configuration Single  NTE Electronics, Inc. MOSFET Transistors Configuration Single   Current, Drain 19 A  NTE Electronics, Inc. Current, Drain 19 A  MOSFET Transistors Current, Drain 19 A  NTE Electronics, Inc. MOSFET Transistors Current, Drain 19 A   Height 0.5" (12.7mm)  NTE Electronics, Inc. Height 0.5" (12.7mm)  MOSFET Transistors Height 0.5" (12.7mm)  NTE Electronics, Inc. MOSFET Transistors Height 0.5" (12.7mm)   Length 0.42" (10.67mm)  NTE Electronics, Inc. Length 0.42" (10.67mm)  MOSFET Transistors Length 0.42" (10.67mm)  NTE Electronics, Inc. MOSFET Transistors Length 0.42" (10.67mm)   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  NTE Electronics, Inc. MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  NTE Electronics, Inc. MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  MOSFET Transistors Number of Pins 3  NTE Electronics, Inc. MOSFET Transistors Number of Pins 3   Package Type TO-220  NTE Electronics, Inc. Package Type TO-220  MOSFET Transistors Package Type TO-220  NTE Electronics, Inc. MOSFET Transistors Package Type TO-220   Power Dissipation 150 W  NTE Electronics, Inc. Power Dissipation 150 W  MOSFET Transistors Power Dissipation 150 W  NTE Electronics, Inc. MOSFET Transistors Power Dissipation 150 W   Resistance, Drain to Source On 0.2 Ω  NTE Electronics, Inc. Resistance, Drain to Source On 0.2 Ω  MOSFET Transistors Resistance, Drain to Source On 0.2 Ω  NTE Electronics, Inc. MOSFET Transistors Resistance, Drain to Source On 0.2 Ω   Temperature, Operating, Maximum +175 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +175 °C  MOSFET Transistors Temperature, Operating, Maximum +175 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Maximum +175 °C   Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +175 °C  NTE Electronics, Inc. Temperature, Operating, Range -55 to +175 °C  MOSFET Transistors Temperature, Operating, Range -55 to +175 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Range -55 to +175 °C   Time, Turn-Off Delay 34 ns  NTE Electronics, Inc. Time, Turn-Off Delay 34 ns  MOSFET Transistors Time, Turn-Off Delay 34 ns  NTE Electronics, Inc. MOSFET Transistors Time, Turn-Off Delay 34 ns   Time, Turn-On Delay 16 ns  NTE Electronics, Inc. Time, Turn-On Delay 16 ns  MOSFET Transistors Time, Turn-On Delay 16 ns  NTE Electronics, Inc. MOSFET Transistors Time, Turn-On Delay 16 ns   Transconductance, Forward 6.2 mhos  NTE Electronics, Inc. Transconductance, Forward 6.2 mhos  MOSFET Transistors Transconductance, Forward 6.2 mhos  NTE Electronics, Inc. MOSFET Transistors Transconductance, Forward 6.2 mhos   Typical Gate Charge @ Vgs 61 nC  NTE Electronics, Inc. Typical Gate Charge @ Vgs 61 nC  MOSFET Transistors Typical Gate Charge @ Vgs 61 nC  NTE Electronics, Inc. MOSFET Transistors Typical Gate Charge @ Vgs 61 nC   Voltage, Drain to Source 100 V  NTE Electronics, Inc. Voltage, Drain to Source 100 V  MOSFET Transistors Voltage, Drain to Source 100 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Drain to Source 100 V   Voltage, Forward, Diode 5 V  NTE Electronics, Inc. Voltage, Forward, Diode 5 V  MOSFET Transistors Voltage, Forward, Diode 5 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Forward, Diode 5 V   Voltage, Gate to Source ±20 V  NTE Electronics, Inc. Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Gate to Source ±20 V  
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    QQ:800152669
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