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NTE2310 - 

TRANSISTOR NPN SILICON 1000V IC=8A TO-218 CASE TF=0.8US HIGH VOLTAGE HIGH SPEED

NTE Electronics, Inc. NTE2310
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制造商產(chǎn)品編號(hào):
NTE2310
倉(cāng)庫(kù)庫(kù)存編號(hào):
70215934
技術(shù)數(shù)據(jù)表:
View NTE2310 Datasheet Datasheet
訂購(gòu)熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
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NTE2310產(chǎn)品概述

Silicon NPN Transistor, TO218 Package Type

NTE2310產(chǎn)品信息

  Brand/Series  Transistor Series  
  Configuration  Common Base  
  Current, Collector  8 A  
  Current, Gain  10  
  Device Dissipation  125 W  
  Dimensions  15.24 x 4.4 x 13.97 mm  
  Height  0.55" (13.97mm)  
  Length  0.6" (15.24mm)  
  Material  Si  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  TO-218  
  Polarity  NPN  
  Power Dissipation  125 W  
  Primary Type  Si  
  Resistance, Thermal, Junction to Case  1.2 °C/W  
  Temperature, Junction, Operating  0 to 175 °C  
  Temperature, Operating, Maximum  +175 °C  
  Temperature, Operating, Minimum  -65 °C  
  Temperature, Operating, Range  -65 to +175 °C  
  Transistor Polarity  NPN  
  Transistor Type  NPN  
  Type  High Voltage, Switch  
  Voltage, Breakdown, Collector to Emitter  450 V  
  Voltage, Collector to Emitter  450 V  
  Voltage, Collector to Emitter, Saturation  1.5 V  
  Voltage, Saturation, Base to Emitter  1.5 V  
  Width  0.173" (4.4mm)  
關(guān)鍵詞         

NTE2310相關(guān)搜索

Brand/Series Transistor Series  NTE Electronics, Inc. Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  NTE Electronics, Inc. Bipolar Transistors Brand/Series Transistor Series   Configuration Common Base  NTE Electronics, Inc. Configuration Common Base  Bipolar Transistors Configuration Common Base  NTE Electronics, Inc. Bipolar Transistors Configuration Common Base   Current, Collector 8 A  NTE Electronics, Inc. Current, Collector 8 A  Bipolar Transistors Current, Collector 8 A  NTE Electronics, Inc. Bipolar Transistors Current, Collector 8 A   Current, Gain 10  NTE Electronics, Inc. Current, Gain 10  Bipolar Transistors Current, Gain 10  NTE Electronics, Inc. Bipolar Transistors Current, Gain 10   Device Dissipation 125 W  NTE Electronics, Inc. Device Dissipation 125 W  Bipolar Transistors Device Dissipation 125 W  NTE Electronics, Inc. Bipolar Transistors Device Dissipation 125 W   Dimensions 15.24 x 4.4 x 13.97 mm  NTE Electronics, Inc. Dimensions 15.24 x 4.4 x 13.97 mm  Bipolar Transistors Dimensions 15.24 x 4.4 x 13.97 mm  NTE Electronics, Inc. Bipolar Transistors Dimensions 15.24 x 4.4 x 13.97 mm   Height 0.55" (13.97mm)  NTE Electronics, Inc. Height 0.55" (13.97mm)  Bipolar Transistors Height 0.55" (13.97mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.55" (13.97mm)   Length 0.6" (15.24mm)  NTE Electronics, Inc. Length 0.6" (15.24mm)  Bipolar Transistors Length 0.6" (15.24mm)  NTE Electronics, Inc. Bipolar Transistors Length 0.6" (15.24mm)   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  NTE Electronics, Inc. Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  NTE Electronics, Inc. Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  Bipolar Transistors Number of Pins 3  NTE Electronics, Inc. Bipolar Transistors Number of Pins 3   Package Type TO-218  NTE Electronics, Inc. Package Type TO-218  Bipolar Transistors Package Type TO-218  NTE Electronics, Inc. Bipolar Transistors Package Type TO-218   Polarity NPN  NTE Electronics, Inc. Polarity NPN  Bipolar Transistors Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Polarity NPN   Power Dissipation 125 W  NTE Electronics, Inc. Power Dissipation 125 W  Bipolar Transistors Power Dissipation 125 W  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 125 W   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 1.2 °C/W  NTE Electronics, Inc. Resistance, Thermal, Junction to Case 1.2 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 1.2 °C/W  NTE Electronics, Inc. Bipolar Transistors Resistance, Thermal, Junction to Case 1.2 °C/W   Temperature, Junction, Operating 0 to 175 °C  NTE Electronics, Inc. Temperature, Junction, Operating 0 to 175 °C  Bipolar Transistors Temperature, Junction, Operating 0 to 175 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Junction, Operating 0 to 175 °C   Temperature, Operating, Maximum +175 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +175 °C  Bipolar Transistors Temperature, Operating, Maximum +175 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +175 °C   Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -65 °C  Bipolar Transistors Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Minimum -65 °C   Temperature, Operating, Range -65 to +175 °C  NTE Electronics, Inc. Temperature, Operating, Range -65 to +175 °C  Bipolar Transistors Temperature, Operating, Range -65 to +175 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range -65 to +175 °C   Transistor Polarity NPN  NTE Electronics, Inc. Transistor Polarity NPN  Bipolar Transistors Transistor Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Polarity NPN   Transistor Type NPN  NTE Electronics, Inc. Transistor Type NPN  Bipolar Transistors Transistor Type NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Type NPN   Type High Voltage, Switch  NTE Electronics, Inc. Type High Voltage, Switch  Bipolar Transistors Type High Voltage, Switch  NTE Electronics, Inc. Bipolar Transistors Type High Voltage, Switch   Voltage, Breakdown, Collector to Emitter 450 V  NTE Electronics, Inc. Voltage, Breakdown, Collector to Emitter 450 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 450 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 450 V   Voltage, Collector to Emitter 450 V  NTE Electronics, Inc. Voltage, Collector to Emitter 450 V  Bipolar Transistors Voltage, Collector to Emitter 450 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 450 V   Voltage, Collector to Emitter, Saturation 1.5 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 1.5 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 1.5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 1.5 V   Voltage, Saturation, Base to Emitter 1.5 V  NTE Electronics, Inc. Voltage, Saturation, Base to Emitter 1.5 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 1.5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Base to Emitter 1.5 V   Width 0.173" (4.4mm)  NTE Electronics, Inc. Width 0.173" (4.4mm)  Bipolar Transistors Width 0.173" (4.4mm)  NTE Electronics, Inc. Bipolar Transistors Width 0.173" (4.4mm)  
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