Brand/Series |
Bipolar Transistor Series |
|
Configuration |
Common Base |
|
Current, Collector |
5 A |
|
Current, Gain |
8 |
|
Device Dissipation |
120 W (Collector) |
|
Dimensions |
15.62 x 4.82 x 20.0 mm |
|
Frequency, Operating |
3 MHz |
|
Gain, DC Current, Minimum |
8 |
|
Height |
0.787" (20mm) |
|
Length |
0.614" (15.62mm) |
|
Material |
Si |
|
Mounting Type |
Through Hole |
|
Number of Elements per Chip |
1 |
|
Number of Pins |
3 |
|
Package Type |
TO-3P |
|
Polarity |
NPN |
|
Power Dissipation |
120 W |
|
Primary Type |
Si |
|
Temperature, Junction, Operating |
0 to 150 °C |
|
Temperature, Operating, Maximum |
+150 °C |
|
Temperature, Operating, Range |
Maximum of +150 °C |
|
Transistor Polarity |
NPN |
|
Transistor Type |
NPN |
|
Type |
High Voltage |
|
Voltage, Breakdown, Collector to Emitter |
800 V |
|
Voltage, Collector to Base |
1500 V |
|
Voltage, Collector to Emitter |
800 V |
|
Voltage, Collector to Emitter, Saturation |
5 V |
|
Voltage, Emitter to Base |
7 V |
|
Voltage, Saturation, Base to Emitter |
1.5 V |
|
Width |
0.19" (4.82mm) |
|
關(guān)鍵詞 |