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NTE196 - 

TRANSISTOR NPN SILICON 90V IC-7A TO-220CASE AUDIO POWER OUTPUT AND MEDIUM POWER

NTE Electronics, Inc. NTE196
聲明:圖片僅供參考,請以實(shí)物為準(zhǔn)!
制造商產(chǎn)品編號:
NTE196
倉庫庫存編號:
70214930
技術(shù)數(shù)據(jù)表:
View NTE196 Datasheet Datasheet
訂購熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
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NTE196產(chǎn)品概述

Silicon Complementary Transistors, Audio Power Output and Medium Power Switching
  • High current-gain bandwidth product: fT ≥ 4 MHz Min @ IC ≥ 500 mA (NTE196)
    Designed for use in general purpose amplifier and switching applications.
  • NTE196產(chǎn)品信息

      Brand/Series  Transistor Series  
      Complement to  PNP  
      Configuration  Common Base  
      Current, Collector  7 A  
      Current, Gain  2.3  
      Device Dissipation  50 W  
      Dimensions  10.67 L x 15.49 H mm  
      Frequency, Operating  10 MHz  
      Gain, DC Current, Minimum  2.3 @ 7 A  
      Height  0.61" (15.49mm)  
      Length  0.42" (10.67mm)  
      Material  Si  
      Material Type  Silicon  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Package Type  TO-220  
      Polarity  NPN  
      Power Dissipation  40 W  
      Primary Type  Si  
      Resistance, Thermal, Junction to Case  3.125 °C/W  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -65 °C  
      Temperature, Operating, Range  -65 to +150 °C  
      Transistor Polarity  NPN  
      Transistor Type  NPN  
      Type  Audio Amplifier, Power  
      Voltage, Breakdown, Collector to Emitter  70 V  
      Voltage, Collector to Base  80 V  
      Voltage, Collector to Emitter  70 V  
      Voltage, Collector to Emitter, Saturation  3.5 V  
      Voltage, Emitter to Base  5 V  
      Voltage, Saturation, Collector to Emitter  3.5 V (Max.) @ 7 A  
    關(guān)鍵詞         

    NTE196相關(guān)搜索

    Brand/Series Transistor Series  NTE Electronics, Inc. Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  NTE Electronics, Inc. Bipolar Transistors Brand/Series Transistor Series   Complement to PNP  NTE Electronics, Inc. Complement to PNP  Bipolar Transistors Complement to PNP  NTE Electronics, Inc. Bipolar Transistors Complement to PNP   Configuration Common Base  NTE Electronics, Inc. Configuration Common Base  Bipolar Transistors Configuration Common Base  NTE Electronics, Inc. Bipolar Transistors Configuration Common Base   Current, Collector 7 A  NTE Electronics, Inc. Current, Collector 7 A  Bipolar Transistors Current, Collector 7 A  NTE Electronics, Inc. Bipolar Transistors Current, Collector 7 A   Current, Gain 2.3  NTE Electronics, Inc. Current, Gain 2.3  Bipolar Transistors Current, Gain 2.3  NTE Electronics, Inc. Bipolar Transistors Current, Gain 2.3   Device Dissipation 50 W  NTE Electronics, Inc. Device Dissipation 50 W  Bipolar Transistors Device Dissipation 50 W  NTE Electronics, Inc. Bipolar Transistors Device Dissipation 50 W   Dimensions 10.67 L x 15.49 H mm  NTE Electronics, Inc. Dimensions 10.67 L x 15.49 H mm  Bipolar Transistors Dimensions 10.67 L x 15.49 H mm  NTE Electronics, Inc. Bipolar Transistors Dimensions 10.67 L x 15.49 H mm   Frequency, Operating 10 MHz  NTE Electronics, Inc. Frequency, Operating 10 MHz  Bipolar Transistors Frequency, Operating 10 MHz  NTE Electronics, Inc. Bipolar Transistors Frequency, Operating 10 MHz   Gain, DC Current, Minimum 2.3 @ 7 A  NTE Electronics, Inc. Gain, DC Current, Minimum 2.3 @ 7 A  Bipolar Transistors Gain, DC Current, Minimum 2.3 @ 7 A  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Minimum 2.3 @ 7 A   Height 0.61" (15.49mm)  NTE Electronics, Inc. Height 0.61" (15.49mm)  Bipolar Transistors Height 0.61" (15.49mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.61" (15.49mm)   Length 0.42" (10.67mm)  NTE Electronics, Inc. Length 0.42" (10.67mm)  Bipolar Transistors Length 0.42" (10.67mm)  NTE Electronics, Inc. Bipolar Transistors Length 0.42" (10.67mm)   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Material Type Silicon  NTE Electronics, Inc. Material Type Silicon  Bipolar Transistors Material Type Silicon  NTE Electronics, Inc. Bipolar Transistors Material Type Silicon   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  NTE Electronics, Inc. Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  NTE Electronics, Inc. Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  Bipolar Transistors Number of Pins 3  NTE Electronics, Inc. Bipolar Transistors Number of Pins 3   Package Type TO-220  NTE Electronics, Inc. Package Type TO-220  Bipolar Transistors Package Type TO-220  NTE Electronics, Inc. Bipolar Transistors Package Type TO-220   Polarity NPN  NTE Electronics, Inc. Polarity NPN  Bipolar Transistors Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Polarity NPN   Power Dissipation 40 W  NTE Electronics, Inc. Power Dissipation 40 W  Bipolar Transistors Power Dissipation 40 W  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 40 W   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 3.125 °C/W  NTE Electronics, Inc. Resistance, Thermal, Junction to Case 3.125 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 3.125 °C/W  NTE Electronics, Inc. Bipolar Transistors Resistance, Thermal, Junction to Case 3.125 °C/W   Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +150 °C  Bipolar Transistors Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -65 °C  Bipolar Transistors Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Minimum -65 °C   Temperature, Operating, Range -65 to +150 °C  NTE Electronics, Inc. Temperature, Operating, Range -65 to +150 °C  Bipolar Transistors Temperature, Operating, Range -65 to +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range -65 to +150 °C   Transistor Polarity NPN  NTE Electronics, Inc. Transistor Polarity NPN  Bipolar Transistors Transistor Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Polarity NPN   Transistor Type NPN  NTE Electronics, Inc. Transistor Type NPN  Bipolar Transistors Transistor Type NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Type NPN   Type Audio Amplifier, Power  NTE Electronics, Inc. Type Audio Amplifier, Power  Bipolar Transistors Type Audio Amplifier, Power  NTE Electronics, Inc. Bipolar Transistors Type Audio Amplifier, Power   Voltage, Breakdown, Collector to Emitter 70 V  NTE Electronics, Inc. Voltage, Breakdown, Collector to Emitter 70 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 70 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 70 V   Voltage, Collector to Base 80 V  NTE Electronics, Inc. Voltage, Collector to Base 80 V  Bipolar Transistors Voltage, Collector to Base 80 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 80 V   Voltage, Collector to Emitter 70 V  NTE Electronics, Inc. Voltage, Collector to Emitter 70 V  Bipolar Transistors Voltage, Collector to Emitter 70 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 70 V   Voltage, Collector to Emitter, Saturation 3.5 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 3.5 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 3.5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 3.5 V   Voltage, Emitter to Base 5 V  NTE Electronics, Inc. Voltage, Emitter to Base 5 V  Bipolar Transistors Voltage, Emitter to Base 5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 5 V   Voltage, Saturation, Collector to Emitter 3.5 V (Max.) @ 7 A  NTE Electronics, Inc. Voltage, Saturation, Collector to Emitter 3.5 V (Max.) @ 7 A  Bipolar Transistors Voltage, Saturation, Collector to Emitter 3.5 V (Max.) @ 7 A  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Collector to Emitter 3.5 V (Max.) @ 7 A  
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