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NTE175 - 

TRANSISTOR NPN SILICON 500V 3AMP LINEARAUDIO POWER AMP TO-66 CASE

NTE Electronics, Inc. NTE175
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制造商產(chǎn)品編號：
NTE175
倉庫庫存編號：
70214911
技術(shù)數(shù)據(jù)表：
View NTE175 Datasheet Datasheet
訂購熱線： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
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NTE175產(chǎn)品概述

Silicon Complementary Transistors, High Voltage, Medium Power Switch, NPN Transistor Type
  • Usable DC current gain to 2.0 ADC
    Designed for high-speed switching and linear amplifier applications for high-voltage Operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers.

    • NTE175產(chǎn)品信息

      Brand/Series  Transistor Series  
      Complement to  PNP  
      Configuration  Common Base  
      Current, Collector  5 A  
      Current, Gain  8  
      Device Dissipation  40 W  
      Diameter  12.3 mm  
      Dimensions  12.3 Dia. x 7.5 H mm  
      Frequency, Operating  15 MHz  
      Gain, DC Current, Minimum  40  
      Height  0.295" (7.5mm)  
      Material  Si  
      Material Type  Silicon  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  2  
      Package Type  TO-66  
      Polarity  NPN  
      Power Dissipation  35 W  
      Primary Type  Si  
      Resistance, Thermal, Junction to Case  5 °C/W  
      Temperature, Operating, Maximum  +200 °C  
      Temperature, Operating, Minimum  -65 °C  
      Temperature, Operating, Range  -65 to +200 °C  
      Transistor Polarity  NPN  
      Transistor Type  NPN  
      Type  Amplifier, High Voltage  
      Voltage, Breakdown, Collector to Emitter  300 V  
      Voltage, Collector to Base  500 V  
      Voltage, Collector to Emitter  300 V  
      Voltage, Collector to Emitter, Saturation  0.75 V  
      Voltage, Emitter to Base  6 V  
      Voltage, Saturation, Base to Emitter  1.4 V  
      Voltage, Saturation, Collector to Emitter  0.75 V  
    關(guān)鍵詞         

    NTE175相關(guān)搜索

    Brand/Series Transistor Series  NTE Electronics, Inc. Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  NTE Electronics, Inc. Bipolar Transistors Brand/Series Transistor Series   Complement to PNP  NTE Electronics, Inc. Complement to PNP  Bipolar Transistors Complement to PNP  NTE Electronics, Inc. Bipolar Transistors Complement to PNP   Configuration Common Base  NTE Electronics, Inc. Configuration Common Base  Bipolar Transistors Configuration Common Base  NTE Electronics, Inc. Bipolar Transistors Configuration Common Base   Current, Collector 5 A  NTE Electronics, Inc. Current, Collector 5 A  Bipolar Transistors Current, Collector 5 A  NTE Electronics, Inc. Bipolar Transistors Current, Collector 5 A   Current, Gain 8  NTE Electronics, Inc. Current, Gain 8  Bipolar Transistors Current, Gain 8  NTE Electronics, Inc. Bipolar Transistors Current, Gain 8   Device Dissipation 40 W  NTE Electronics, Inc. Device Dissipation 40 W  Bipolar Transistors Device Dissipation 40 W  NTE Electronics, Inc. Bipolar Transistors Device Dissipation 40 W   Diameter 12.3 mm  NTE Electronics, Inc. Diameter 12.3 mm  Bipolar Transistors Diameter 12.3 mm  NTE Electronics, Inc. Bipolar Transistors Diameter 12.3 mm   Dimensions 12.3 Dia. x 7.5 H mm  NTE Electronics, Inc. Dimensions 12.3 Dia. x 7.5 H mm  Bipolar Transistors Dimensions 12.3 Dia. x 7.5 H mm  NTE Electronics, Inc. Bipolar Transistors Dimensions 12.3 Dia. x 7.5 H mm   Frequency, Operating 15 MHz  NTE Electronics, Inc. Frequency, Operating 15 MHz  Bipolar Transistors Frequency, Operating 15 MHz  NTE Electronics, Inc. Bipolar Transistors Frequency, Operating 15 MHz   Gain, DC Current, Minimum 40  NTE Electronics, Inc. Gain, DC Current, Minimum 40  Bipolar Transistors Gain, DC Current, Minimum 40  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Minimum 40   Height 0.295" (7.5mm)  NTE Electronics, Inc. Height 0.295" (7.5mm)  Bipolar Transistors Height 0.295" (7.5mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.295" (7.5mm)   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Material Type Silicon  NTE Electronics, Inc. Material Type Silicon  Bipolar Transistors Material Type Silicon  NTE Electronics, Inc. Bipolar Transistors Material Type Silicon   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  NTE Electronics, Inc. Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  NTE Electronics, Inc. Bipolar Transistors Number of Elements per Chip 1   Number of Pins 2  NTE Electronics, Inc. Number of Pins 2  Bipolar Transistors Number of Pins 2  NTE Electronics, Inc. Bipolar Transistors Number of Pins 2   Package Type TO-66  NTE Electronics, Inc. Package Type TO-66  Bipolar Transistors Package Type TO-66  NTE Electronics, Inc. Bipolar Transistors Package Type TO-66   Polarity NPN  NTE Electronics, Inc. Polarity NPN  Bipolar Transistors Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Polarity NPN   Power Dissipation 35 W  NTE Electronics, Inc. Power Dissipation 35 W  Bipolar Transistors Power Dissipation 35 W  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 35 W   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 5 °C/W  NTE Electronics, Inc. Resistance, Thermal, Junction to Case 5 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 5 °C/W  NTE Electronics, Inc. Bipolar Transistors Resistance, Thermal, Junction to Case 5 °C/W   Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +200 °C  Bipolar Transistors Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +200 °C   Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -65 °C  Bipolar Transistors Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Minimum -65 °C   Temperature, Operating, Range -65 to +200 °C  NTE Electronics, Inc. Temperature, Operating, Range -65 to +200 °C  Bipolar Transistors Temperature, Operating, Range -65 to +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range -65 to +200 °C   Transistor Polarity NPN  NTE Electronics, Inc. Transistor Polarity NPN  Bipolar Transistors Transistor Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Polarity NPN   Transistor Type NPN  NTE Electronics, Inc. Transistor Type NPN  Bipolar Transistors Transistor Type NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Type NPN   Type Amplifier, High Voltage  NTE Electronics, Inc. Type Amplifier, High Voltage  Bipolar Transistors Type Amplifier, High Voltage  NTE Electronics, Inc. Bipolar Transistors Type Amplifier, High Voltage   Voltage, Breakdown, Collector to Emitter 300 V  NTE Electronics, Inc. Voltage, Breakdown, Collector to Emitter 300 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 300 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 300 V   Voltage, Collector to Base 500 V  NTE Electronics, Inc. Voltage, Collector to Base 500 V  Bipolar Transistors Voltage, Collector to Base 500 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 500 V   Voltage, Collector to Emitter 300 V  NTE Electronics, Inc. Voltage, Collector to Emitter 300 V  Bipolar Transistors Voltage, Collector to Emitter 300 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 300 V   Voltage, Collector to Emitter, Saturation 0.75 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 0.75 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.75 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.75 V   Voltage, Emitter to Base 6 V  NTE Electronics, Inc. Voltage, Emitter to Base 6 V  Bipolar Transistors Voltage, Emitter to Base 6 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 6 V   Voltage, Saturation, Base to Emitter 1.4 V  NTE Electronics, Inc. Voltage, Saturation, Base to Emitter 1.4 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 1.4 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Base to Emitter 1.4 V   Voltage, Saturation, Collector to Emitter 0.75 V  NTE Electronics, Inc. Voltage, Saturation, Collector to Emitter 0.75 V  Bipolar Transistors Voltage, Saturation, Collector to Emitter 0.75 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Collector to Emitter 0.75 V  
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