Configuration |
Common Base |
|
Current, Collector |
2 A |
|
Current, Gain |
10 |
|
Diameter |
9.39 mm |
|
Dimensions |
9.39 Dia. x 6.6 H mm |
|
Height |
0.26" (6.6mm) |
|
Material |
Si |
|
Mounting Type |
Through Hole |
|
Number of Elements per Chip |
1 |
|
Number of Pins |
3 |
|
Power Dissipation |
10 W |
|
Temperature, Operating, Maximum |
+200 °C |
|
Temperature, Operating, Minimum |
-65 °C |
|
Temperature, Operating, Range |
-65 to +200 °C |
|
Transistor Type |
NPN |
|
Voltage, Collector to Base |
100 V |
|
Voltage, Collector to Emitter |
75 V |
|
Voltage, Collector to Emitter, Saturation |
0.7 V |
|
Voltage, Emitter to Base |
7 V |
|
關(guān)鍵詞 |