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25LC640T-I/SN - 

Microchip 25LC640T-I/SN Serial EEPROM Memory, 64kbit, 230ns, 2.5 to 5.5V 8-Pin SOIC

Microchip Technology Inc. 25LC640T-I/SN
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制造商產(chǎn)品編號:
25LC640T-I/SN
倉庫庫存編號:
70046823
技術(shù)數(shù)據(jù)表:
View 25LC640T-I/SN Datasheet Datasheet
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25LC640T-I/SN產(chǎn)品信息

  Brand/Series  25LC640 Series  
  Capacitance, Input  7 pF  
  Capacitance, Output  7 pF  
  Current, Input, Leakage  ±1 μA  
  Current, Operating  1 mA (Read), 5 mA (Write)  
  Current, Output, Leakage  ±1 μA  
  Data Retention  >200 yrs.  
  Density  64K  
  Interface  SPI Bus  
  Memory Type  Serial EEPROM  
  Organization  8192×8  
  Package Type  SOIC  
  Supply Voltage  2.5 to 5.5 V  
  Temperature, Operating  -40 to +85 °C  
  Time, Access  230 ns  
  Time, Address Hold  250 ns  
  Time, Address Setup  250 ns  
  Time, Fall  2 μs  
  Time, Rise  2 μs  
  Voltage, ESD  >4 kV  
  Voltage, Input, High Level  3.5 V  
  Voltage, Input, Low Level  0.5 V  
  Voltage, Output, High Level  2 V  
  Voltage, Output, Low Level  0.4 V  
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25LC640T-I/SN相關(guān)搜索

Brand/Series 25LC640 Series  Microchip Technology Inc. Brand/Series 25LC640 Series  EEPROM Memory Chips Brand/Series 25LC640 Series  Microchip Technology Inc. EEPROM Memory Chips Brand/Series 25LC640 Series   Capacitance, Input 7 pF  Microchip Technology Inc. Capacitance, Input 7 pF  EEPROM Memory Chips Capacitance, Input 7 pF  Microchip Technology Inc. EEPROM Memory Chips Capacitance, Input 7 pF   Capacitance, Output 7 pF  Microchip Technology Inc. Capacitance, Output 7 pF  EEPROM Memory Chips Capacitance, Output 7 pF  Microchip Technology Inc. EEPROM Memory Chips Capacitance, Output 7 pF   Current, Input, Leakage ±1 μA  Microchip Technology Inc. Current, Input, Leakage ±1 μA  EEPROM Memory Chips Current, Input, Leakage ±1 μA  Microchip Technology Inc. EEPROM Memory Chips Current, Input, Leakage ±1 μA   Current, Operating 1 mA (Read), 5 mA (Write)  Microchip Technology Inc. Current, Operating 1 mA (Read), 5 mA (Write)  EEPROM Memory Chips Current, Operating 1 mA (Read), 5 mA (Write)  Microchip Technology Inc. EEPROM Memory Chips Current, Operating 1 mA (Read), 5 mA (Write)   Current, Output, Leakage ±1 μA  Microchip Technology Inc. Current, Output, Leakage ±1 μA  EEPROM Memory Chips Current, Output, Leakage ±1 μA  Microchip Technology Inc. EEPROM Memory Chips Current, Output, Leakage ±1 μA   Data Retention >200 yrs.  Microchip Technology Inc. Data Retention >200 yrs.  EEPROM Memory Chips Data Retention >200 yrs.  Microchip Technology Inc. EEPROM Memory Chips Data Retention >200 yrs.   Density 64K  Microchip Technology Inc. Density 64K  EEPROM Memory Chips Density 64K  Microchip Technology Inc. EEPROM Memory Chips Density 64K   Interface SPI Bus  Microchip Technology Inc. Interface SPI Bus  EEPROM Memory Chips Interface SPI Bus  Microchip Technology Inc. EEPROM Memory Chips Interface SPI Bus   Memory Type Serial EEPROM  Microchip Technology Inc. Memory Type Serial EEPROM  EEPROM Memory Chips Memory Type Serial EEPROM  Microchip Technology Inc. EEPROM Memory Chips Memory Type Serial EEPROM   Organization 8192×8  Microchip Technology Inc. Organization 8192×8  EEPROM Memory Chips Organization 8192×8  Microchip Technology Inc. EEPROM Memory Chips Organization 8192×8   Package Type SOIC  Microchip Technology Inc. Package Type SOIC  EEPROM Memory Chips Package Type SOIC  Microchip Technology Inc. EEPROM Memory Chips Package Type SOIC   Supply Voltage 2.5 to 5.5 V  Microchip Technology Inc. Supply Voltage 2.5 to 5.5 V  EEPROM Memory Chips Supply Voltage 2.5 to 5.5 V  Microchip Technology Inc. EEPROM Memory Chips Supply Voltage 2.5 to 5.5 V   Temperature, Operating -40 to +85 °C  Microchip Technology Inc. Temperature, Operating -40 to +85 °C  EEPROM Memory Chips Temperature, Operating -40 to +85 °C  Microchip Technology Inc. EEPROM Memory Chips Temperature, Operating -40 to +85 °C   Time, Access 230 ns  Microchip Technology Inc. Time, Access 230 ns  EEPROM Memory Chips Time, Access 230 ns  Microchip Technology Inc. EEPROM Memory Chips Time, Access 230 ns   Time, Address Hold 250 ns  Microchip Technology Inc. Time, Address Hold 250 ns  EEPROM Memory Chips Time, Address Hold 250 ns  Microchip Technology Inc. EEPROM Memory Chips Time, Address Hold 250 ns   Time, Address Setup 250 ns  Microchip Technology Inc. Time, Address Setup 250 ns  EEPROM Memory Chips Time, Address Setup 250 ns  Microchip Technology Inc. EEPROM Memory Chips Time, Address Setup 250 ns   Time, Fall 2 μs  Microchip Technology Inc. Time, Fall 2 μs  EEPROM Memory Chips Time, Fall 2 μs  Microchip Technology Inc. EEPROM Memory Chips Time, Fall 2 μs   Time, Rise 2 μs  Microchip Technology Inc. Time, Rise 2 μs  EEPROM Memory Chips Time, Rise 2 μs  Microchip Technology Inc. EEPROM Memory Chips Time, Rise 2 μs   Voltage, ESD >4 kV  Microchip Technology Inc. Voltage, ESD >4 kV  EEPROM Memory Chips Voltage, ESD >4 kV  Microchip Technology Inc. EEPROM Memory Chips Voltage, ESD >4 kV   Voltage, Input, High Level 3.5 V  Microchip Technology Inc. Voltage, Input, High Level 3.5 V  EEPROM Memory Chips Voltage, Input, High Level 3.5 V  Microchip Technology Inc. EEPROM Memory Chips Voltage, Input, High Level 3.5 V   Voltage, Input, Low Level 0.5 V  Microchip Technology Inc. Voltage, Input, Low Level 0.5 V  EEPROM Memory Chips Voltage, Input, Low Level 0.5 V  Microchip Technology Inc. EEPROM Memory Chips Voltage, Input, Low Level 0.5 V   Voltage, Output, High Level 2 V  Microchip Technology Inc. Voltage, Output, High Level 2 V  EEPROM Memory Chips Voltage, Output, High Level 2 V  Microchip Technology Inc. EEPROM Memory Chips Voltage, Output, High Level 2 V   Voltage, Output, Low Level 0.4 V  Microchip Technology Inc. Voltage, Output, Low Level 0.4 V  EEPROM Memory Chips Voltage, Output, Low Level 0.4 V  Microchip Technology Inc. EEPROM Memory Chips Voltage, Output, Low Level 0.4 V  
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