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Discrete Semiconductors

Transistors & Modules

MOSFET Transistors

> IRLR7821PBF

IRLR7821PBF -

MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 7.5Milliohms; ID 65A; D-Pak (TO-252AA); PD 75W

International Rectifier IRLR7821PBF

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International Rectifier

制造商：: International Rectifier International Rectifier
制造商產(chǎn)品編號：: IRLR7821PBF
倉庫庫存編號：: 70017114
技術(shù)數(shù)據(jù)表：: Datasheet

訂購熱線： 400-900-3095 0755-21000796, QQ:800152669, Email:sales@szcwdz.com

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IRLR7821PBF產(chǎn)品概述

N-Channel Power MOSFET 60A to 79A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

IRLR7821PBF相關(guān)搜索

Brand/Series HEXFET Series International Rectifier Brand/Series HEXFET Series MOSFET Transistors Brand/Series HEXFET Series International Rectifier MOSFET Transistors Brand/Series HEXFET Series Capacitance, Input 1030 pF @ 15 V International Rectifier Capacitance, Input 1030 pF @ 15 V MOSFET Transistors Capacitance, Input 1030 pF @ 15 V International Rectifier MOSFET Transistors Capacitance, Input 1030 pF @ 15 V Channel Mode Enhancement International Rectifier Channel Mode Enhancement MOSFET Transistors Channel Mode Enhancement International Rectifier MOSFET Transistors Channel Mode Enhancement Channel Type N International Rectifier Channel Type N MOSFET Transistors Channel Type N International Rectifier MOSFET Transistors Channel Type N Configuration Single International Rectifier Configuration Single MOSFET Transistors Configuration Single International Rectifier MOSFET Transistors Configuration Single Current, Drain 65 A International Rectifier Current, Drain 65 A MOSFET Transistors Current, Drain 65 A International Rectifier MOSFET Transistors Current, Drain 65 A Dimensions 6.73 x 6.22 x 2.26 mm International Rectifier Dimensions 6.73 x 6.22 x 2.26 mm MOSFET Transistors Dimensions 6.73 x 6.22 x 2.26 mm International Rectifier MOSFET Transistors Dimensions 6.73 x 6.22 x 2.26 mm Gate Charge, Total 10 nC International Rectifier Gate Charge, Total 10 nC MOSFET Transistors Gate Charge, Total 10 nC International Rectifier MOSFET Transistors Gate Charge, Total 10 nC Height 0.089" (2.26mm) International Rectifier Height 0.089" (2.26mm) MOSFET Transistors Height 0.089" (2.26mm) International Rectifier MOSFET Transistors Height 0.089" (2.26mm) Length 0.264" (6.73mm) International Rectifier Length 0.264" (6.73mm) MOSFET Transistors Length 0.264" (6.73mm) International Rectifier MOSFET Transistors Length 0.264" (6.73mm) Mounting Type Surface Mount International Rectifier Mounting Type Surface Mount MOSFET Transistors Mounting Type Surface Mount International Rectifier MOSFET Transistors Mounting Type Surface Mount Number of Elements per Chip 1 International Rectifier Number of Elements per Chip 1 MOSFET Transistors Number of Elements per Chip 1 International Rectifier MOSFET Transistors Number of Elements per Chip 1 Number of Pins 3 International Rectifier Number of Pins 3 MOSFET Transistors Number of Pins 3 International Rectifier MOSFET Transistors Number of Pins 3 Package Type DPAK International Rectifier Package Type DPAK MOSFET Transistors Package Type DPAK International Rectifier MOSFET Transistors Package Type DPAK Polarization N-Channel International Rectifier Polarization N-Channel MOSFET Transistors Polarization N-Channel International Rectifier MOSFET Transistors Polarization N-Channel Power Dissipation 75 W International Rectifier Power Dissipation 75 W MOSFET Transistors Power Dissipation 75 W International Rectifier MOSFET Transistors Power Dissipation 75 W Resistance, Drain to Source On 12.5 mΩ International Rectifier Resistance, Drain to Source On 12.5 mΩ MOSFET Transistors Resistance, Drain to Source On 12.5 mΩ International Rectifier MOSFET Transistors Resistance, Drain to Source On 12.5 mΩ Temperature, Operating, Maximum +175 °C International Rectifier Temperature, Operating, Maximum +175 °C MOSFET Transistors Temperature, Operating, Maximum +175 °C International Rectifier MOSFET Transistors Temperature, Operating, Maximum +175 °C Temperature, Operating, Minimum -55 °C International Rectifier Temperature, Operating, Minimum -55 °C MOSFET Transistors Temperature, Operating, Minimum -55 °C International Rectifier MOSFET Transistors Temperature, Operating, Minimum -55 °C Temperature, Operating, Range -55 to +175 °C International Rectifier Temperature, Operating, Range -55 to +175 °C MOSFET Transistors Temperature, Operating, Range -55 to +175 °C International Rectifier MOSFET Transistors Temperature, Operating, Range -55 to +175 °C Time, Turn-Off Delay 10 ns International Rectifier Time, Turn-Off Delay 10 ns MOSFET Transistors Time, Turn-Off Delay 10 ns International Rectifier MOSFET Transistors Time, Turn-Off Delay 10 ns Time, Turn-On Delay 11 ns International Rectifier Time, Turn-On Delay 11 ns MOSFET Transistors Time, Turn-On Delay 11 ns International Rectifier MOSFET Transistors Time, Turn-On Delay 11 ns Transconductance, Forward 46 sec International Rectifier Transconductance, Forward 46 sec MOSFET Transistors Transconductance, Forward 46 sec International Rectifier MOSFET Transistors Transconductance, Forward 46 sec Typical Gate Charge @ Vgs 10 nC @ 4.5 V International Rectifier Typical Gate Charge @ Vgs 10 nC @ 4.5 V MOSFET Transistors Typical Gate Charge @ Vgs 10 nC @ 4.5 V International Rectifier MOSFET Transistors Typical Gate Charge @ Vgs 10 nC @ 4.5 V Voltage, Breakdown, Drain to Source 30 V International Rectifier Voltage, Breakdown, Drain to Source 30 V MOSFET Transistors Voltage, Breakdown, Drain to Source 30 V International Rectifier MOSFET Transistors Voltage, Breakdown, Drain to Source 30 V Voltage, Drain to Source 30 V International Rectifier Voltage, Drain to Source 30 V MOSFET Transistors Voltage, Drain to Source 30 V International Rectifier MOSFET Transistors Voltage, Drain to Source 30 V Voltage, Forward, Diode 1 V International Rectifier Voltage, Forward, Diode 1 V MOSFET Transistors Voltage, Forward, Diode 1 V International Rectifier MOSFET Transistors Voltage, Forward, Diode 1 V Voltage, Gate to Source ±20 V International Rectifier Voltage, Gate to Source ±20 V MOSFET Transistors Voltage, Gate to Source ±20 V International Rectifier MOSFET Transistors Voltage, Gate to Source ±20 V Width 0.245" (6.22mm) International Rectifier Width 0.245" (6.22mm) MOSFET Transistors Width 0.245" (6.22mm) International Rectifier MOSFET Transistors Width 0.245" (6.22mm)

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