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IRLR120NTRPBF
IRLR120NTRPBF -
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.185Ohm; ID 10A; D-Pak (TO-252AA); PD 48W
聲明:圖片僅供參考,請(qǐng)以實(shí)物為準(zhǔn)!
制造商:
International Rectifier
International Rectifier
制造商產(chǎn)品編號(hào):
IRLR120NTRPBF
倉(cāng)庫(kù)庫(kù)存編號(hào):
70017828
技術(shù)數(shù)據(jù)表:
Datasheet
訂購(gòu)熱線:
400-900-3095 0755-21000796, QQ:
800152669
, Email:
sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫(kù)龐大,部分產(chǎn)品信息可能未能及時(shí)更新,下單前請(qǐng)與銷(xiāo)售人員確認(rèn)好實(shí)時(shí)在庫(kù)數(shù)量,謝謝合作!
IRLR120NTRPBF產(chǎn)品概述
HEXFET® N-Channel Power MOSFET up to 50A, Infineon
HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.
IRLR120NTRPBF產(chǎn)品信息
Brand/Series
HEXFET Series
Capacitance, Input
440 pF @ 25 V
Channel Mode
Enhancement
Channel Type
N
Configuration
Dual Drain
Current, Drain
10 A
Dimensions
6.73 x 6.22 x 2.39 mm
Gate Charge, Total
20 nC
Height
0.094" (2.39mm)
Length
0.264" (6.73mm)
Mounting Type
Surface Mount
Number of Elements per Chip
1
Number of Pins
3
Package Type
DPAK
Polarization
N-Channel
Power Dissipation
48 W
Resistance, Drain to Source On
0.265 Ω
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Temperature, Operating, Range
-55 to +175 °C
Time, Turn-Off Delay
23 ns
Time, Turn-On Delay
4 ns
Transconductance, Forward
3.1 S
Typical Gate Charge @ Vgs
Maximum of 20 nC @ 5 V
Voltage, Breakdown, Drain to Source
100 V
Voltage, Drain to Source
100 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate to Source
±16 V
Width
0.245" (6.22mm)
關(guān)鍵詞
IRLR120NTRPBF相關(guān)搜索
Brand/Series HEXFET Series
International Rectifier Brand/Series HEXFET Series
MOSFET Transistors Brand/Series HEXFET Series
International Rectifier MOSFET Transistors Brand/Series HEXFET Series
Capacitance, Input 440 pF @ 25 V
International Rectifier Capacitance, Input 440 pF @ 25 V
MOSFET Transistors Capacitance, Input 440 pF @ 25 V
International Rectifier MOSFET Transistors Capacitance, Input 440 pF @ 25 V
Channel Mode Enhancement
International Rectifier Channel Mode Enhancement
MOSFET Transistors Channel Mode Enhancement
International Rectifier MOSFET Transistors Channel Mode Enhancement
Channel Type N
International Rectifier Channel Type N
MOSFET Transistors Channel Type N
International Rectifier MOSFET Transistors Channel Type N
Configuration Dual Drain
International Rectifier Configuration Dual Drain
MOSFET Transistors Configuration Dual Drain
International Rectifier MOSFET Transistors Configuration Dual Drain
Current, Drain 10 A
International Rectifier Current, Drain 10 A
MOSFET Transistors Current, Drain 10 A
International Rectifier MOSFET Transistors Current, Drain 10 A
Dimensions 6.73 x 6.22 x 2.39 mm
International Rectifier Dimensions 6.73 x 6.22 x 2.39 mm
MOSFET Transistors Dimensions 6.73 x 6.22 x 2.39 mm
International Rectifier MOSFET Transistors Dimensions 6.73 x 6.22 x 2.39 mm
Gate Charge, Total 20 nC
International Rectifier Gate Charge, Total 20 nC
MOSFET Transistors Gate Charge, Total 20 nC
International Rectifier MOSFET Transistors Gate Charge, Total 20 nC
Height 0.094" (2.39mm)
International Rectifier Height 0.094" (2.39mm)
MOSFET Transistors Height 0.094" (2.39mm)
International Rectifier MOSFET Transistors Height 0.094" (2.39mm)
Length 0.264" (6.73mm)
International Rectifier Length 0.264" (6.73mm)
MOSFET Transistors Length 0.264" (6.73mm)
International Rectifier MOSFET Transistors Length 0.264" (6.73mm)
Mounting Type Surface Mount
International Rectifier Mounting Type Surface Mount
MOSFET Transistors Mounting Type Surface Mount
International Rectifier MOSFET Transistors Mounting Type Surface Mount
Number of Elements per Chip 1
International Rectifier Number of Elements per Chip 1
MOSFET Transistors Number of Elements per Chip 1
International Rectifier MOSFET Transistors Number of Elements per Chip 1
Number of Pins 3
International Rectifier Number of Pins 3
MOSFET Transistors Number of Pins 3
International Rectifier MOSFET Transistors Number of Pins 3
Package Type DPAK
International Rectifier Package Type DPAK
MOSFET Transistors Package Type DPAK
International Rectifier MOSFET Transistors Package Type DPAK
Polarization N-Channel
International Rectifier Polarization N-Channel
MOSFET Transistors Polarization N-Channel
International Rectifier MOSFET Transistors Polarization N-Channel
Power Dissipation 48 W
International Rectifier Power Dissipation 48 W
MOSFET Transistors Power Dissipation 48 W
International Rectifier MOSFET Transistors Power Dissipation 48 W
Resistance, Drain to Source On 0.265 Ω
International Rectifier Resistance, Drain to Source On 0.265 Ω
MOSFET Transistors Resistance, Drain to Source On 0.265 Ω
International Rectifier MOSFET Transistors Resistance, Drain to Source On 0.265 Ω
Temperature, Operating, Maximum +175 °C
International Rectifier Temperature, Operating, Maximum +175 °C
MOSFET Transistors Temperature, Operating, Maximum +175 °C
International Rectifier MOSFET Transistors Temperature, Operating, Maximum +175 °C
Temperature, Operating, Minimum -55 °C
International Rectifier Temperature, Operating, Minimum -55 °C
MOSFET Transistors Temperature, Operating, Minimum -55 °C
International Rectifier MOSFET Transistors Temperature, Operating, Minimum -55 °C
Temperature, Operating, Range -55 to +175 °C
International Rectifier Temperature, Operating, Range -55 to +175 °C
MOSFET Transistors Temperature, Operating, Range -55 to +175 °C
International Rectifier MOSFET Transistors Temperature, Operating, Range -55 to +175 °C
Time, Turn-Off Delay 23 ns
International Rectifier Time, Turn-Off Delay 23 ns
MOSFET Transistors Time, Turn-Off Delay 23 ns
International Rectifier MOSFET Transistors Time, Turn-Off Delay 23 ns
Time, Turn-On Delay 4 ns
International Rectifier Time, Turn-On Delay 4 ns
MOSFET Transistors Time, Turn-On Delay 4 ns
International Rectifier MOSFET Transistors Time, Turn-On Delay 4 ns
Transconductance, Forward 3.1 S
International Rectifier Transconductance, Forward 3.1 S
MOSFET Transistors Transconductance, Forward 3.1 S
International Rectifier MOSFET Transistors Transconductance, Forward 3.1 S
Typical Gate Charge @ Vgs Maximum of 20 nC @ 5 V
International Rectifier Typical Gate Charge @ Vgs Maximum of 20 nC @ 5 V
MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 20 nC @ 5 V
International Rectifier MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 20 nC @ 5 V
Voltage, Breakdown, Drain to Source 100 V
International Rectifier Voltage, Breakdown, Drain to Source 100 V
MOSFET Transistors Voltage, Breakdown, Drain to Source 100 V
International Rectifier MOSFET Transistors Voltage, Breakdown, Drain to Source 100 V
Voltage, Drain to Source 100 V
International Rectifier Voltage, Drain to Source 100 V
MOSFET Transistors Voltage, Drain to Source 100 V
International Rectifier MOSFET Transistors Voltage, Drain to Source 100 V
Voltage, Forward, Diode 1.3 V
International Rectifier Voltage, Forward, Diode 1.3 V
MOSFET Transistors Voltage, Forward, Diode 1.3 V
International Rectifier MOSFET Transistors Voltage, Forward, Diode 1.3 V
Voltage, Gate to Source ±16 V
International Rectifier Voltage, Gate to Source ±16 V
MOSFET Transistors Voltage, Gate to Source ±16 V
International Rectifier MOSFET Transistors Voltage, Gate to Source ±16 V
Width 0.245" (6.22mm)
International Rectifier Width 0.245" (6.22mm)
MOSFET Transistors Width 0.245" (6.22mm)
International Rectifier MOSFET Transistors Width 0.245" (6.22mm)
郵箱:
sales@szcwdz.com
Q Q:
800152669
手機(jī)網(wǎng)站:
m.szcwdz.com
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