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IRLMS2002TRPBF
IRLMS2002TRPBF -
MOSFET, Power; N-Ch; VDSS 20V; RDS(ON) 0.03Ohm; ID 6.5A; Micro6; PD 2W; VGS +/-12V; -55d
聲明:圖片僅供參考,請(qǐng)以實(shí)物為準(zhǔn)!
制造商:
International Rectifier
International Rectifier
制造商產(chǎn)品編號(hào):
IRLMS2002TRPBF
倉(cāng)庫(kù)庫(kù)存編號(hào):
70017108
技術(shù)數(shù)據(jù)表:
Datasheet
訂購(gòu)熱線:
400-900-3095 0755-21000796, QQ:
800152669
, Email:
sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫(kù)龐大,部分產(chǎn)品信息可能未能及時(shí)更新,下單前請(qǐng)與銷售人員確認(rèn)好實(shí)時(shí)在庫(kù)數(shù)量,謝謝合作!
IRLMS2002TRPBF產(chǎn)品概述
HEXFET® N-Channel Power MOSFET up to 50A, Infineon
HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.
IRLMS2002TRPBF產(chǎn)品信息
Brand/Series
HEXFET Series
Capacitance, Input
1310 pF @ 15 V
Channel Mode
Enhancement
Channel Type
N
Configuration
Single
Current, Drain
6.5 A
Dimensions
3.00 x 1.75 x 1.15 mm
Gate Charge, Total
15 nC
Height
0.045" (1.15mm)
Length
0.118" (3mm)
Mounting Type
Surface Mount
Number of Elements per Chip
1
Number of Pins
3
Package Type
SOT-23
Polarization
N-Channel
Power Dissipation
2 W
Resistance, Drain to Source On
0.045 Ω
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Temperature, Operating, Range
-55 to +150 °C
Time, Turn-Off Delay
36 ns
Time, Turn-On Delay
8.5 ns
Transconductance, Forward
13 S
Typical Gate Charge @ Vgs
15 nC @ 5 V
Voltage, Breakdown, Drain to Source
20 V
Voltage, Drain to Source
20 V
Voltage, Forward, Diode
1.2 V
Voltage, Gate to Source
±12 V
Width
0.069" (1.75mm)
關(guān)鍵詞
IRLMS2002TRPBF客戶還搜索了
參考圖片
制造商 / 說明 / 型號(hào) / 倉(cāng)庫(kù)庫(kù)存編號(hào)
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操作
AVX
Varistor; 18.5 V +/- 12%; TRANSIENT VOLTAGE; 14.0 VDC, 10.0 VAC; Cut Tape
型號(hào):
VC060314A300DP
倉(cāng)庫(kù)庫(kù)存編號(hào):
70001163
搜索
AVX
Varistor; 18.5 V +/- 12%; TRANSIENT VOLTAGE; 14.0 VDC, 10.0 VAC; Cut Tape
型號(hào):
VC060314A300DP
倉(cāng)庫(kù)庫(kù)存編號(hào):
70001163
搜索
Kingbright
APG1608SURKC/T Red LED, 630 nm 1608 (0603) Clear, Rectangle Lens SMD package
型號(hào):
APG1608SURKC/T
倉(cāng)庫(kù)庫(kù)存編號(hào):
70062821
搜索
TE Connectivity
Connector, SFP, 20 Position, 30um Gold w/surface treatment
型號(hào):
1888247-1
倉(cāng)庫(kù)庫(kù)存編號(hào):
70084373
搜索
Vishay Dale
Resistor; Thick Film; 0 Ohms; 0.063 W; 0 Ohms Jumper; SMT; 0402; TCR 0 ppm/DegC; CutTape
型號(hào):
CRCW04020000Z0ED
倉(cāng)庫(kù)庫(kù)存編號(hào):
70201139
搜索
Vishay Dale
Resistor; Thick Film; 10 Ohms; 0.125 W; 1%; SMT; 0805; TCR 37 ppm/DegC; Cut Tape
型號(hào):
CRCW080510R0FKEA
倉(cāng)庫(kù)庫(kù)存編號(hào):
70201196
搜索
Vishay Dale
Resistor; Thick Film; 1 Kilohms; 0.25 W; 1%; SMT; 1206; TCR 37 ppm/DegC; Cut Tape
型號(hào):
CRCW12061K00FKEA
倉(cāng)庫(kù)庫(kù)存編號(hào):
70201271
搜索
Vishay Dale
Resistor; Thick Film; 1 Kilohms; 0.25 W; 1%; SMT; 1206; TCR 37 ppm/DegC; Cut Tape
型號(hào):
CRCW12061K00FKEA
倉(cāng)庫(kù)庫(kù)存編號(hào):
70201271
搜索
Vishay Dale
Resistor; Thick Film; 1 Kilohms; 0.25 W; 1%; SMT; 1206; TCR 37 ppm/DegC; Cut Tape
型號(hào):
CRCW12061K00FKEA
倉(cāng)庫(kù)庫(kù)存編號(hào):
70201271
搜索
Panasonic
Resistor; Thick Film; Res 2.2 Megohms; Pwr-Rtg 0.1 W; Tol 1%; SMT; 0603; Cut Tape
型號(hào):
ERJ-3EKF2204V
倉(cāng)庫(kù)庫(kù)存編號(hào):
70265716
搜索
IRLMS2002TRPBF相關(guān)搜索
Brand/Series HEXFET Series
International Rectifier Brand/Series HEXFET Series
MOSFET Transistors Brand/Series HEXFET Series
International Rectifier MOSFET Transistors Brand/Series HEXFET Series
Capacitance, Input 1310 pF @ 15 V
International Rectifier Capacitance, Input 1310 pF @ 15 V
MOSFET Transistors Capacitance, Input 1310 pF @ 15 V
International Rectifier MOSFET Transistors Capacitance, Input 1310 pF @ 15 V
Channel Mode Enhancement
International Rectifier Channel Mode Enhancement
MOSFET Transistors Channel Mode Enhancement
International Rectifier MOSFET Transistors Channel Mode Enhancement
Channel Type N
International Rectifier Channel Type N
MOSFET Transistors Channel Type N
International Rectifier MOSFET Transistors Channel Type N
Configuration Single
International Rectifier Configuration Single
MOSFET Transistors Configuration Single
International Rectifier MOSFET Transistors Configuration Single
Current, Drain 6.5 A
International Rectifier Current, Drain 6.5 A
MOSFET Transistors Current, Drain 6.5 A
International Rectifier MOSFET Transistors Current, Drain 6.5 A
Dimensions 3.00 x 1.75 x 1.15 mm
International Rectifier Dimensions 3.00 x 1.75 x 1.15 mm
MOSFET Transistors Dimensions 3.00 x 1.75 x 1.15 mm
International Rectifier MOSFET Transistors Dimensions 3.00 x 1.75 x 1.15 mm
Gate Charge, Total 15 nC
International Rectifier Gate Charge, Total 15 nC
MOSFET Transistors Gate Charge, Total 15 nC
International Rectifier MOSFET Transistors Gate Charge, Total 15 nC
Height 0.045" (1.15mm)
International Rectifier Height 0.045" (1.15mm)
MOSFET Transistors Height 0.045" (1.15mm)
International Rectifier MOSFET Transistors Height 0.045" (1.15mm)
Length 0.118" (3mm)
International Rectifier Length 0.118" (3mm)
MOSFET Transistors Length 0.118" (3mm)
International Rectifier MOSFET Transistors Length 0.118" (3mm)
Mounting Type Surface Mount
International Rectifier Mounting Type Surface Mount
MOSFET Transistors Mounting Type Surface Mount
International Rectifier MOSFET Transistors Mounting Type Surface Mount
Number of Elements per Chip 1
International Rectifier Number of Elements per Chip 1
MOSFET Transistors Number of Elements per Chip 1
International Rectifier MOSFET Transistors Number of Elements per Chip 1
Number of Pins 3
International Rectifier Number of Pins 3
MOSFET Transistors Number of Pins 3
International Rectifier MOSFET Transistors Number of Pins 3
Package Type SOT-23
International Rectifier Package Type SOT-23
MOSFET Transistors Package Type SOT-23
International Rectifier MOSFET Transistors Package Type SOT-23
Polarization N-Channel
International Rectifier Polarization N-Channel
MOSFET Transistors Polarization N-Channel
International Rectifier MOSFET Transistors Polarization N-Channel
Power Dissipation 2 W
International Rectifier Power Dissipation 2 W
MOSFET Transistors Power Dissipation 2 W
International Rectifier MOSFET Transistors Power Dissipation 2 W
Resistance, Drain to Source On 0.045 Ω
International Rectifier Resistance, Drain to Source On 0.045 Ω
MOSFET Transistors Resistance, Drain to Source On 0.045 Ω
International Rectifier MOSFET Transistors Resistance, Drain to Source On 0.045 Ω
Temperature, Operating, Maximum +150 °C
International Rectifier Temperature, Operating, Maximum +150 °C
MOSFET Transistors Temperature, Operating, Maximum +150 °C
International Rectifier MOSFET Transistors Temperature, Operating, Maximum +150 °C
Temperature, Operating, Minimum -55 °C
International Rectifier Temperature, Operating, Minimum -55 °C
MOSFET Transistors Temperature, Operating, Minimum -55 °C
International Rectifier MOSFET Transistors Temperature, Operating, Minimum -55 °C
Temperature, Operating, Range -55 to +150 °C
International Rectifier Temperature, Operating, Range -55 to +150 °C
MOSFET Transistors Temperature, Operating, Range -55 to +150 °C
International Rectifier MOSFET Transistors Temperature, Operating, Range -55 to +150 °C
Time, Turn-Off Delay 36 ns
International Rectifier Time, Turn-Off Delay 36 ns
MOSFET Transistors Time, Turn-Off Delay 36 ns
International Rectifier MOSFET Transistors Time, Turn-Off Delay 36 ns
Time, Turn-On Delay 8.5 ns
International Rectifier Time, Turn-On Delay 8.5 ns
MOSFET Transistors Time, Turn-On Delay 8.5 ns
International Rectifier MOSFET Transistors Time, Turn-On Delay 8.5 ns
Transconductance, Forward 13 S
International Rectifier Transconductance, Forward 13 S
MOSFET Transistors Transconductance, Forward 13 S
International Rectifier MOSFET Transistors Transconductance, Forward 13 S
Typical Gate Charge @ Vgs 15 nC @ 5 V
International Rectifier Typical Gate Charge @ Vgs 15 nC @ 5 V
MOSFET Transistors Typical Gate Charge @ Vgs 15 nC @ 5 V
International Rectifier MOSFET Transistors Typical Gate Charge @ Vgs 15 nC @ 5 V
Voltage, Breakdown, Drain to Source 20 V
International Rectifier Voltage, Breakdown, Drain to Source 20 V
MOSFET Transistors Voltage, Breakdown, Drain to Source 20 V
International Rectifier MOSFET Transistors Voltage, Breakdown, Drain to Source 20 V
Voltage, Drain to Source 20 V
International Rectifier Voltage, Drain to Source 20 V
MOSFET Transistors Voltage, Drain to Source 20 V
International Rectifier MOSFET Transistors Voltage, Drain to Source 20 V
Voltage, Forward, Diode 1.2 V
International Rectifier Voltage, Forward, Diode 1.2 V
MOSFET Transistors Voltage, Forward, Diode 1.2 V
International Rectifier MOSFET Transistors Voltage, Forward, Diode 1.2 V
Voltage, Gate to Source ±12 V
International Rectifier Voltage, Gate to Source ±12 V
MOSFET Transistors Voltage, Gate to Source ±12 V
International Rectifier MOSFET Transistors Voltage, Gate to Source ±12 V
Width 0.069" (1.75mm)
International Rectifier Width 0.069" (1.75mm)
MOSFET Transistors Width 0.069" (1.75mm)
International Rectifier MOSFET Transistors Width 0.069" (1.75mm)
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sales@szcwdz.com
Q Q:
800152669
手機(jī)網(wǎng)站:
m.szcwdz.com
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