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IRLI3705NPBF - 

MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.01Ohm; ID 52A; TO-220 Full-Pak; PD 58W; -55deg

International Rectifier IRLI3705NPBF
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制造商產(chǎn)品編號：
IRLI3705NPBF
倉庫庫存編號：
70017485
技術(shù)數(shù)據(jù)表：
View IRLI3705NPBF Datasheet Datasheet
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IRLI3705NPBF產(chǎn)品概述

N-Channel Power MOSFET 50A to 59A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

IRLI3705NPBF產(chǎn)品信息

  Brand/Series  HEXFET Series  
  Current, Drain  52 A  
  Gate Charge, Total  98 nC  
  Package Type  TO-220 Full-Pak  
  Polarization  N-Channel  
  Power Dissipation  58 W  
  Resistance, Drain to Source On  0.01 Ohm  
  Temperature, Operating, Maximum  +175 °C  
  Temperature, Operating, Minimum  -55 °C  
  Time, Turn-Off Delay  37 ns  
  Time, Turn-On Delay  12 ns  
  Transconductance, Forward  50 S  
  Voltage, Breakdown, Drain to Source  55 V  
  Voltage, Forward, Diode  1.3 V  
  Voltage, Gate to Source  ±16 V  
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IRLI3705NPBF相關(guān)搜索

Brand/Series HEXFET Series  International Rectifier Brand/Series HEXFET Series  MOSFET Transistors Brand/Series HEXFET Series  International Rectifier MOSFET Transistors Brand/Series HEXFET Series   Current, Drain 52 A  International Rectifier Current, Drain 52 A  MOSFET Transistors Current, Drain 52 A  International Rectifier MOSFET Transistors Current, Drain 52 A   Gate Charge, Total 98 nC  International Rectifier Gate Charge, Total 98 nC  MOSFET Transistors Gate Charge, Total 98 nC  International Rectifier MOSFET Transistors Gate Charge, Total 98 nC   Package Type TO-220 Full-Pak  International Rectifier Package Type TO-220 Full-Pak  MOSFET Transistors Package Type TO-220 Full-Pak  International Rectifier MOSFET Transistors Package Type TO-220 Full-Pak   Polarization N-Channel  International Rectifier Polarization N-Channel  MOSFET Transistors Polarization N-Channel  International Rectifier MOSFET Transistors Polarization N-Channel   Power Dissipation 58 W  International Rectifier Power Dissipation 58 W  MOSFET Transistors Power Dissipation 58 W  International Rectifier MOSFET Transistors Power Dissipation 58 W   Resistance, Drain to Source On 0.01 Ohm  International Rectifier Resistance, Drain to Source On 0.01 Ohm  MOSFET Transistors Resistance, Drain to Source On 0.01 Ohm  International Rectifier MOSFET Transistors Resistance, Drain to Source On 0.01 Ohm   Temperature, Operating, Maximum +175 °C  International Rectifier Temperature, Operating, Maximum +175 °C  MOSFET Transistors Temperature, Operating, Maximum +175 °C  International Rectifier MOSFET Transistors Temperature, Operating, Maximum +175 °C   Temperature, Operating, Minimum -55 °C  International Rectifier Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  International Rectifier MOSFET Transistors Temperature, Operating, Minimum -55 °C   Time, Turn-Off Delay 37 ns  International Rectifier Time, Turn-Off Delay 37 ns  MOSFET Transistors Time, Turn-Off Delay 37 ns  International Rectifier MOSFET Transistors Time, Turn-Off Delay 37 ns   Time, Turn-On Delay 12 ns  International Rectifier Time, Turn-On Delay 12 ns  MOSFET Transistors Time, Turn-On Delay 12 ns  International Rectifier MOSFET Transistors Time, Turn-On Delay 12 ns   Transconductance, Forward 50 S  International Rectifier Transconductance, Forward 50 S  MOSFET Transistors Transconductance, Forward 50 S  International Rectifier MOSFET Transistors Transconductance, Forward 50 S   Voltage, Breakdown, Drain to Source 55 V  International Rectifier Voltage, Breakdown, Drain to Source 55 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 55 V  International Rectifier MOSFET Transistors Voltage, Breakdown, Drain to Source 55 V   Voltage, Forward, Diode 1.3 V  International Rectifier Voltage, Forward, Diode 1.3 V  MOSFET Transistors Voltage, Forward, Diode 1.3 V  International Rectifier MOSFET Transistors Voltage, Forward, Diode 1.3 V   Voltage, Gate to Source ±16 V  International Rectifier Voltage, Gate to Source ±16 V  MOSFET Transistors Voltage, Gate to Source ±16 V  International Rectifier MOSFET Transistors Voltage, Gate to Source ±16 V  
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