Brand/Series |
HEXFET Series |
|
Capacitance, Input |
5890 pF @ 15 V |
|
Channel Mode |
Enhancement |
|
Channel Type |
N |
|
Configuration |
Single |
|
Current, Drain |
260 A |
|
Dimensions |
10.66 x 4.82 x 9.02 mm |
|
Gate Charge, Total |
75 nC |
|
Height |
0.355" (9.02mm) |
|
Length |
0.419" (10.66mm) |
|
Mounting Type |
Through Hole |
|
Number of Elements per Chip |
1 |
|
Number of Pins |
3 |
|
Package Type |
TO-220AB |
|
Polarization |
N-Channel |
|
Power Dissipation |
330 W |
|
Resistance, Drain to Source On |
4 mΩ |
|
Temperature, Operating, Maximum |
+175 °C |
|
Temperature, Operating, Minimum |
-55 °C |
|
Temperature, Operating, Range |
-55 to +175 °C |
|
Time, Turn-Off Delay |
40 ns |
|
Time, Turn-On Delay |
16 ns |
|
Transconductance, Forward |
76 S |
|
Typical Gate Charge @ Vgs |
75 nC @ 4.5 V |
|
Voltage, Breakdown, Drain to Source |
30 V |
|
Voltage, Drain to Source |
30 V |
|
Voltage, Forward, Diode |
0.8 V |
|
Voltage, Gate to Source |
±20 V |
|
Width |
0.19" (4.82mm) |
|
關(guān)鍵詞 |