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IRGB14C40LPBF - 

430V LOW-VCEON DISCRETE IGBT IN A TO-220AB PACKAGE

International Rectifier IRGB14C40LPBF
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制造商產(chǎn)品編號：
IRGB14C40LPBF
倉庫庫存編號：
70017509
技術數(shù)據(jù)表：
View IRGB14C40LPBF Datasheet Datasheet
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由于產(chǎn)品數(shù)據(jù)庫龐大，部分產(chǎn)品信息可能未能及時更新，下單前請與銷售人員確認好實時在庫數(shù)量，謝謝合作！

IRGB14C40LPBF產(chǎn)品概述

Automotive Ignition IGBT, Infineon
The IGBT is optimized for driving the coil in the harsh environment of automotive ignition systems. Active voltage clamps on the IGBT Gate-Emitter and Gate-Collector are included in the semiconductor package.

IRGB14C40LPBF產(chǎn)品信息

  Capacitance, Gate  825 pF  
  Channel Type  N  
  Configuration  Single  
  Current, Collector  20 A  
  Current, Continuous Collector  20 A  
  Dimensions  10.54 x 4.69 x 15.24 mm  
  Height  0.6" (15.24mm)  
  Length  0.414" (10.54mm)  
  Mounting Type  Through Hole  
  Number of Pins  3  
  Package Type  TO-220AB  
  Polarity  N-Channel  
  Power Dissipation  125 W  
  Primary Type  Si  
  Resistance, Thermal, Junction to Case  1.2 °C/W  
  Speed, Switching  DC-1 kHz  
  Temperature, Operating, Maximum  +175 °C  
  Temperature, Operating, Minimum  -40 °C  
  Temperature, Operating, Range  -40 to +175 °C  
  Type  Clamped  
  Voltage, Collector to Emitter  430 V  
  Voltage, Collector to Emitter Shorted  430 V  
  Width  0.185" (4.69mm)  
關鍵詞         

IRGB14C40LPBF相關搜索

Capacitance, Gate 825 pF  International Rectifier Capacitance, Gate 825 pF  IGBT Transistors Capacitance, Gate 825 pF  International Rectifier IGBT Transistors Capacitance, Gate 825 pF   Channel Type N  International Rectifier Channel Type N  IGBT Transistors Channel Type N  International Rectifier IGBT Transistors Channel Type N   Configuration Single  International Rectifier Configuration Single  IGBT Transistors Configuration Single  International Rectifier IGBT Transistors Configuration Single   Current, Collector 20 A  International Rectifier Current, Collector 20 A  IGBT Transistors Current, Collector 20 A  International Rectifier IGBT Transistors Current, Collector 20 A   Current, Continuous Collector 20 A  International Rectifier Current, Continuous Collector 20 A  IGBT Transistors Current, Continuous Collector 20 A  International Rectifier IGBT Transistors Current, Continuous Collector 20 A   Dimensions 10.54 x 4.69 x 15.24 mm  International Rectifier Dimensions 10.54 x 4.69 x 15.24 mm  IGBT Transistors Dimensions 10.54 x 4.69 x 15.24 mm  International Rectifier IGBT Transistors Dimensions 10.54 x 4.69 x 15.24 mm   Height 0.6" (15.24mm)  International Rectifier Height 0.6" (15.24mm)  IGBT Transistors Height 0.6" (15.24mm)  International Rectifier IGBT Transistors Height 0.6" (15.24mm)   Length 0.414" (10.54mm)  International Rectifier Length 0.414" (10.54mm)  IGBT Transistors Length 0.414" (10.54mm)  International Rectifier IGBT Transistors Length 0.414" (10.54mm)   Mounting Type Through Hole  International Rectifier Mounting Type Through Hole  IGBT Transistors Mounting Type Through Hole  International Rectifier IGBT Transistors Mounting Type Through Hole   Number of Pins 3  International Rectifier Number of Pins 3  IGBT Transistors Number of Pins 3  International Rectifier IGBT Transistors Number of Pins 3   Package Type TO-220AB  International Rectifier Package Type TO-220AB  IGBT Transistors Package Type TO-220AB  International Rectifier IGBT Transistors Package Type TO-220AB   Polarity N-Channel  International Rectifier Polarity N-Channel  IGBT Transistors Polarity N-Channel  International Rectifier IGBT Transistors Polarity N-Channel   Power Dissipation 125 W  International Rectifier Power Dissipation 125 W  IGBT Transistors Power Dissipation 125 W  International Rectifier IGBT Transistors Power Dissipation 125 W   Primary Type Si  International Rectifier Primary Type Si  IGBT Transistors Primary Type Si  International Rectifier IGBT Transistors Primary Type Si   Resistance, Thermal, Junction to Case 1.2 °C/W  International Rectifier Resistance, Thermal, Junction to Case 1.2 °C/W  IGBT Transistors Resistance, Thermal, Junction to Case 1.2 °C/W  International Rectifier IGBT Transistors Resistance, Thermal, Junction to Case 1.2 °C/W   Speed, Switching DC-1 kHz  International Rectifier Speed, Switching DC-1 kHz  IGBT Transistors Speed, Switching DC-1 kHz  International Rectifier IGBT Transistors Speed, Switching DC-1 kHz   Temperature, Operating, Maximum +175 °C  International Rectifier Temperature, Operating, Maximum +175 °C  IGBT Transistors Temperature, Operating, Maximum +175 °C  International Rectifier IGBT Transistors Temperature, Operating, Maximum +175 °C   Temperature, Operating, Minimum -40 °C  International Rectifier Temperature, Operating, Minimum -40 °C  IGBT Transistors Temperature, Operating, Minimum -40 °C  International Rectifier IGBT Transistors Temperature, Operating, Minimum -40 °C   Temperature, Operating, Range -40 to +175 °C  International Rectifier Temperature, Operating, Range -40 to +175 °C  IGBT Transistors Temperature, Operating, Range -40 to +175 °C  International Rectifier IGBT Transistors Temperature, Operating, Range -40 to +175 °C   Type Clamped  International Rectifier Type Clamped  IGBT Transistors Type Clamped  International Rectifier IGBT Transistors Type Clamped   Voltage, Collector to Emitter 430 V  International Rectifier Voltage, Collector to Emitter 430 V  IGBT Transistors Voltage, Collector to Emitter 430 V  International Rectifier IGBT Transistors Voltage, Collector to Emitter 430 V   Voltage, Collector to Emitter Shorted 430 V  International Rectifier Voltage, Collector to Emitter Shorted 430 V  IGBT Transistors Voltage, Collector to Emitter Shorted 430 V  International Rectifier IGBT Transistors Voltage, Collector to Emitter Shorted 430 V   Width 0.185" (4.69mm)  International Rectifier Width 0.185" (4.69mm)  IGBT Transistors Width 0.185" (4.69mm)  International Rectifier IGBT Transistors Width 0.185" (4.69mm)  
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